Взаимодействие атомов Ge с поверхностными реконструкциями в системе Me/Si (111)
Диссертация
При покрытии германия больше 0,03 МС атомы германия на поверхности 81(111)5,55×5,55-Си образуют атомные кластеры: димеры, тримеры, тетрамеры и пентамеры. Расстояние между атомами германия в кластерах больше межатомного расстояния на поверхности и составляет л/За, 2а, 41а. В зависимости от расстояния между атомами германия кластеры могут быть разделены на 3 основные группы: гексагональныеу/Зх-х/з… Читать ещё >
Список литературы
- Ю.Б. Болховитянов, О. П. Пчеляков, JJ.B. Соколов, С. И. Чикичев. Искусственные подложки GeSi для гетероэпитаксии — достижения и проблемы. // Физика и техника полупроводников. — 2003. — Т. 37. Вып. 5. — С. 513—538.
- F. Schaffler. High-mobility Si and Ge structures. // Semicond. Sci. Technol. — 1997. — V. 12. N. 12. —P. 1515−1549.
- D.J. Paul. Silicon germanium heterostructures in electronics: the present and the future. // Thin Solid Films. — 1998. — V. 321. — P. 172−180
- J. N. Crain, K. N. Altmann, C. Bromberger, and F. J. Himpsel. Fermi surfaces of surface states on Si.lll.-Ag, Au //Phys. Rev. B. — 2002. — V. 66, — P. 205 302−1-205 302−8.
- C. Liu, I. Matsuda, R. Hobara, and S. Hasegawa. Interaction between Adatom-Induced Localized States and a Quasi-Two-Dimensional Electron Gas. // Phys. Rev. Lett. — 2006. — V. 96. — P. 36 803−1-36 803−4.
- Lifshits V.G., Saranin A.A., Zotov A.V. Surface Phases on Silicon. // Chichester: Wiley. —1994, —P. 450.
- Schlier R.E., Farnsworth H.E. Structure and adsorption characteristics of clean surfaces of germanium and silicon. // J.Chem.Phys. — 1959. — V. 30, N. 4. —P. 917−926.
- Duke CB. The amazing story of semiconductor surface structures. // Progr. Surf. Sci. —1995. —V. 50. —P. 31−43.
- Oura K. Lifshits V. G., Saranin A. A., Zotov A. V., Katayama M. Surface Science. An Introduction. Berlin, Heidelberg. // Springer-Verlag. — 2003. — P. 440.
- Park R.L., Madden H.H. Annealing changes on the (100) surface of palladium and their effect on CO adsorption. // Surf. Sci. —1968. — V. 11, N. 2. — P. 188−202.
- Wood E.A. Vocabulary of surface crystallography. // J. Appl. Phys. — 1964. — V. 35, N. 4. —P. 1306−1312.
- Вудраф Д., Делчар Т. Современные методы исследования поверхности. // Москва: Мир. — 1989. — с. 564.
- Киттель Ч. Введение в физику твердого тела. // Москва: Наука. — 1978.- с.
- Qian G.-X., Chadi D.J. Si (lll) —7×7 surface: Energy-minimization calculation for the dimer-adatom-stacking-fault model. // Phys. Rev. B. 1987. — V. 35, N. 3. — P. 12 881 293.
- Robinson I.K., Vlieg E. X-ray reflectivity study of the Si (l 11)7×7 surface. // Surf. Sci. — 1992. — V.261. — P123−128.
- Horio Y" Ichimiya A. Kinematical analysis of RHEED intensities from the Si (l 11)7×7 surface.//Surf. Sci. — 1989. —V. 219, N 1,2. —P. 128−142.
- TongS. Y., Huang n, Wet CM., Packard W.E., Men F.K., Glander G.S., Webb M.B. Low-energy electron diffraction analisys of the Si (l 11)7×7 structure. // J. Vac. Sci. Technol. A.1988. —V. 6, N. 3. — P. 615−624.
- Takdyanagi K., Tanishiro Y., Takahashi S., Takahashi M. Structure analysis of — 7×7 reconstructed surface by transmission electron diffraction. // Surf. Sci. — 1985. — V. 164.1. P. 367−392.
- Harrison W.A. Surface reconstruction on semiconductors. // Surf. Sci. ¦— 1976. — V. 55, N. 1. —P. 1−19.
- Bennett P.A., Feldman L.C., Kuk Y., McRae E.G., Rowe J.E. Stacking-fault model for the Si (l 1 1)-(7×7) surface. // Phys. Rev. B. — 1983. — V. 28, N. 6. — P. 3656−3659.
- Culbertson R.J., Feldman L.C., Silverman P.J. Atomic displacements in the Si (lll) —(7×7) surface. // Phys. Rev. Lett. — 1980. — V.45. N.25. — P.2043−2046.
- Tromp R.M., Van Loenen E.J., Iwami M., Saris F. W. On the structure of the laser irradiated Si (lll)(lxl) surface. // Sol. State Commun. — 1982. — V. 44, N. 6. —P. 971−974.
- Binning G., Rohrer H., Gerber Ch., Weibel E. (7×7) reconstruction on Si(lll) resolved in real space. // Phys. Rev. Lett. — 1983. —V.50, N.2. — P.120−123.
- Himpsel F. J Structural model for Si (l 1 l)-(7×7). // Phys. Rev. B. — 1983. — V. 27, N. 12. —P. 7782−7785.
- McRae E.G. Surface stacking sequence and (7×7) reconstruction at Si (l 11) surfaces. // Phys. Rev. B. — 1983. — V. 28, N. 4. — P. 2305−2307.
- Voigtlander B. Fundamental processed in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth. // Surf. Sci. reports. — 2001. ¦— V. 43. —P. 127 254.
- Z. H. Qin, D. X. Shi, H. F. Ma, and H.-J. Gao. STM observation and first-principles determination of Ge nanoscale structures on Si (l 11). // Phys. Rev. B. — 2007. — V. 75. — P. 85 313−1-85 313−5.
- N. Motta, A. Sgarlata. STM studies of Ge-Si thin layers epitaxially grown on Si (lll). //Appl. Surf. Sci. —1996. —V. 102, —P. 57−61.'
- Актов В.Б., Заводинский В. Г., Лифшиц В. Г., Чурусов Б. К. Тонкие пленки In на поверхности Si(l 11).// Поверхность. — 1986. — № 6. — с. 54−60.
- J. J. Lander and J. Morrison. Surface reactions of silicon with aluminum and with indium. II Surf. Sci. — 1964 — V. 2. — P. 553−565.
- J. J. Lander and J. Morrison. Surface Reactions of Silicon (111) with Aluminum and Indium. // J. Appl. Phys. — 1965. — V. 36. — P. 1706.
- T. Aiyama and S. Ino. RHEED Observation of the Si (lll)W31xV31-(R30°)-In Structure. // Surf. Sci. — 1979. — V. 82. — P. 585-L588.
- S. Baba, M. Kawaji and A. Kinbara. Isothermal desorption of indium from V31-In and V33-In on Silicon (111) surfaces. // Surf. Sci. — 1979. — V. 85. — P. 29.
- M. Kawaji, S. Baba and A. Kinbara. Superstructures of submonolayer Indium films on Silicon (l 11) surfaces. // Appl. Phys. Lett. — 1979 — V. 34. — P. 748.
- S. Baba, Jun Ming Zhou and A. Kinbara. Superstructures and growth properties of indium deposits on silicon (111) surfaces with its influence on surface electrical conduction. // Japan J. Appl. Phys. — 1980. — V. 19. — P. 571.
- S. Baba, H. Hirayama, J. M. Zhou and A. Kinbara. Adatoms Of Indium On Si (lll) Surfaces Application Of Reflection High-Energy Electron- Diffraction To Desorption Experiments // Thin Solid Films. — 1982. — V. 90. — P. 57.
- H. Hirayama, S. Baba and A. Kinbara. Electron energy loss spectra of In/Si (lll) superstructures. // Japan J. Appl. Phys. — 1986. — V. 25. — L452-L454.
- H. Hirayama, S. Baba and A. Kinbara. Electron energy loss measurements of In/Si (l 11) superstructures: Correlation of the spectra with surface superstructures. // Appl. Surf. Sci. — 1988.—V. 33−34, —P. 193.
- J. Nogami, Sang-il Park, and C. F. Quate. Indium-induced reconstructions of the Si (lll) surface studied by scanning tunneling microscopy. //Phys. Rev. В. — 1987. — V. 36. — P. 6221−6224.
- J. Nogami, Sang-il Park, and C. F. Quale. Behavior of indium on the Si (l 11)7×7 surface at low metal coverage. // J. Vac. Sci. Technol. B. — 1988. — V. 6. —P. 1479.
- S. Park, J. Nogami and C. F. Quate. Metal-induced reconstructions of the silicon (l 11) surface. // J. Microscopy. — 1988. — V. 152. — P. 727−734.
- Бехтерева O.B., Гаврилюк Ю. Л., Лифшиц В. Г., Чурусов Б. К. Формирование поверхнстных фаз и их проявление в процессах диффузии и десорбции в системе In-Si. // Поверхность. — 1988. — № 8. — С. 54−60.
- D. М. Cornells on, М. S. Worthington and I. S. Т. Tsong. Si (lll)-(4xl)In surface reconstruction studied by impact-collision ion-scattering spectrometry. // Phys. Rev. B. — 1991.1. V. 43. P. 4051−4056.
- N. Nakamura, К Anno and S. Kono. Structure analysis of the single-domain Si (l 11)4×1-In surface by ц-probe Auger electron diffraction and |j.-probe reflection high energy electron diffraction. // Surf. Sci. — 1991. — V. 256. — P. 129−134.
- Abukawa Т., Sasaki M., Hisamatsu F., Goto Т., Kinoshita Т., Kakizaki A., Kono S. Surface electronic structure of a single-domain Si (l 11)4×1-In surface: a synchrotron radiation photoemission study. // Surf. Sci. — 1995. — V. 325, N 1−2. — P. 33.
- Saranin A.A., Zotov A.V., Ignatovich K.V., Lifshits V.G., Numata Т., Kubo O., Tani H., Katayama M., Oura K. New structural model for the Si (lll)4xl-In reconstruction. // Appl. Surf. Sci. — 1998. — Vol. 130−132. — P. 96
- M. Bohringer and J. Zegenhagen. Unidirectional and isotropic strain relief in striped and hexagonal phases of Ge (l 1 l):In. I I Surf. Sci. — 1995. — V. 327. — P. 248−260.
- T. Ichikawa. RHEED Study of In-Induced Superstructures on Ge (lll) Surfaces. // Surf. Sci. —1981. —V. 111. —P. 227.
- J. Zegenhagen, P. F. Lyman, M. В ohringer, and M. J. Bedzyk. Discommensurate Reconstructions of (lll)Si and Ge Induced by Surface Alloying with Cu, Ga and In. // Phys.
- Stat. Sol. (b). — 1997.— V. 204. — P. 587.
- Z. Gai, R. G. Zhao, Y. He, H. Ji, С. Ни, and W. S. Yang. Chemisorption of group-Ill metals on the (111) surface of group-IV semiconductors: In/Ge (l 11). // Phys. Rev. В. — V. 53.1. P. 1539−1547.
- C. A. Sebenne. Initial steps of metal-silicon interface formation. // Proc. 17th Int. Conf. Phys. Semic. — 1985. — P. 143.
- P. Chen, D. Bolmont and C. A. Sebenne. Adsorption of Al on cleaved Si (111) at room temperature. // J. Phys. C. — 1984, — V. 17. — P. 4897.
- A. W. Parke, A. McKinley, R. H. Williams and G. P. Srivastava. The electronic structure of cleaved silicon (111) surfaces following adsorption of aluminium // J. Phys. C. —1980, — V. 13, — P. L369.
- K. L. I. Kobayashi, F. Gerken, J. Barth and C. Kunz. Angle-resolved ultraviolet-photoelectron-spectroscopy study of the Si (l 11) V3>
- W. S. Yang, S. C. Wu and F. Jona. Structural reactions of Si{lll}7×7 with metals // Surf. Sei. — 1986. — V. 169. — P. 383−393.
- Khramtsova E.A., Zotov A.V., Saranin A.A., Ryzhkov S.V., Chub A.B., Lifshits KG. Growth of extra-thin ordered aluminum films on Si (l 11) surface. // Appl. Surf. Sei. — 1994. — V. 82/83, N. 1−4. — P. 576−582.
- R. J. Hamers. Effects of coverage on the geometry and electronic structure of Al overlayersonSi (lll).//Phys. Rev. B.— 1989. —V.40. —P. 1657−1671.
- R. Q. Hwang, E. D. Williams and R. L. Park. Thermal disordering of the (V3xV3)R30° structure of Al on Si (l 11). // Surf. Sei. — 1988,—V. 193. —P. L53-L57.
- K Nishikata, K. Murakami, M. Yoshimura and A. Kawazu Structural studies of Al/Si (l 11) surfaces by LEED. // Surf. Sei. — 1992. — V. 269−270. P. 995−999.
- T. Kinoshita, S. Kono and T. Sagawa. Angle-resolved ultraviolet-photoelectron-spectroscopy study of the Si (lll)V3xV3-Al surface. // Phys. Rev. B. — 1985. — V. 32. — P. 2714−2716.
- R. I. G. Uhr berg, G. V. Hansson, J. M. Nicholls, P. E. S. Persson and S. A. Flodstrom. Photoemission study of the surface and bulk electronic structures of Si (l 11)7×7 and Si (lll) V3xV3: Al. //Phys. Rev. B. — 1985. —V. 31. — P. 3805−3810.
- T. Kinoshita, S. Kono and T. Sagawa. Comparative study of the Si (lll) V3xV3-Ga and -Al surfaces by angle-resolved ultraviolet photoelectron spectroscopy. // Solid State Commun. — 1985. — V. 56. — P. 681−685.
- R. J. Hamers and J. E. Demuth. Atomic structure and bonding of Si (l 11) (V3xV3)Al. // J. Vac. Sei. Technol. A. — 1988. — V. 6. —P. 512.
- T. Takaoka, M. Yoshimura, T. Yao, T. Sato, T. Sueyoshi and M. Iwatsuki. Atomistic study of the formation process of Ni silicide on the Si (l 11)-7><7 surface with scanning tunneling microscopy//Mat. Res. Soc. Simp. Proc. —1993. — V. 295. — P. 59.
- H. Huang, S. Y. Tong, W. S. Yang, H. D. Shih and F. Jona. Atomic structure of Si (lll)-(V3 x a/3)R30°-A1 studied by dynamical low-energy electron diffraction. // Phys. Rev. B. — 1990. — V. 42. — P. 7483−7486.
- J! M. Nicholls, B. Reihl and J. E. Northrup. Unoccupied surface states revealing the Si (lll)V3 V3 -Al, -Ga, and -In adatom geometries. // Phys. Rev. B. — 1987. — V. 35. — P. 4137−4140.
- J. E. Northrup. Si (l 11) V3>W3-A1: An Adatom-Induced Reconstruction. // Phys. Rev. Lett. — 1984. — V. 53. — P. 683−686.
- H. Tsuge, M. Aral and T. Fugiwara. Atomic Structure of Si (l 11)-V3 x a/3/?30 -Al Studied by First Principle Molecular Dynamics// Japan J. Appl. Phys. — 1991. — V. 30. — P. L1583-L1585.
- Zotov A.V., Khramtsova E.A., Ryzhkov S.V., Saranin A.A., Chub A.B., Lifshits V.G. LEED-AES reexamination of the Al/Si (l 11) «y-phase». // Surf. Sci. — 1994. — V. 316, N. 1−2. — P. L1034-L1038.
- Tromp R.M., Michely T. Atomic-layer titration of surface reaction. // Nature. : — 1995. — V. 373. — P. 499−501 .
- Yoshimura M., Takaoka K., Yao T., Sueyoshi T., Sato T., Iwatsuki M. Scanning tunneling microscopy observation of Al-induced reconstructions of the Si (l 11) surface: Growth dynamics. // J. Vac. Sci. Technol. B. — 1994. — V. 12, N. 4. — P. 2434−2436.
- Michely T., Reuter M.C., Tromp R.M. Al on Si (lll): Phase diagram and atomic mechanisms. // Phys. Rev. B. — 1996. — V. 53, N. 7. — P. 4105−4108.
- Groger R., von Blanckenhagen P. Phase transitions in ultrathin Al films on Si (l 1 l) surfaces. // Thin Solid Films. — 1996. — V. 281−282, N. 1−4. — P. 73−75.
- Groger R.M., Barczewski M.R. Ultrathin Al layers on Si (lll) and Si (100): structures and phase transitions. // Surf. Interface Anal. —2001. — V. 32. — P. 154−160.
- J. R. Chelikowsky. Electronic structure of Al chemisorbed on the Si (111) surface. // Phys. Rev. B. — 1977. — V. 16. — P. 3618−3627.
- Sugawara Y., Orisaka S., Morita S. Noncontact AFM imaging on Al-adsorbed Si (lll) surface with an empty orbital. // Appl. Surf. Sci. — 2000. — V. 157, N. 4. — P. 239 243.
- A.A. Saranin, KG. Kotlyar, A. V. Zotov T. K Kasyanova, M.A. Cherevik, KG. Lifshits. Structure of domain walls in Al/Si (l 11) y-phase // Surf. Sci. — 2002. — V. 517. — P. 151−156.
- Kotlyar V.G., Zotov A. K, Saranin A. A., Kasyanova T. K, Cherevik M.A., Pisarenko I. V., and Lifshits KG. Formation of the ordered array of A1 magic clusters on Si (l 11)7×7. // Phys.Rev. B — 2002. — V. 66. P. 165 401−4.
- Jia J., Wang J.-Zh., Liu X., Xue Q.-K. Artificial nanocluster crystal: Lattice of identical A1 clusters. // Appl. Phys, Lett. — 2002. — V. 80, N. 17. — P. 3186−3188.
- Jia J.-F., Liu X., Wang J.-Z, Li J.-L., Wang X.S., Xue Q.-K, Li Z.-Q., Zhang Z, Zhang S.B. Fabrication and structural analysis of Al, Ga, and In nanocluster crystals. // Phys. Rev. B —2002, —V. 66, N. 16. —P. 165 412−10
- Lai M.Y., Wang Y.L. Direct observation of two dimensional magic clusters. // Phys. Rev. Lett. — 1998. —V. 81, N. 1. — P. 164−167.
- Lai M.Y., Wang Y.L. Self-organized two-dimensional lattice of magic clusters. // Phys. Rev. B. — 2001. — V. 64, N. 24. — P. 241 404−4.
- Li J.L., Jia J.F., LiangX. J., Liu X., Wang J. Z, Xue Q.K., Li Z.Q., Tse J.S., Zhang Z., and Zhang S.B. Spontaneous assembly of perfectly ordered identical-size nanocluster arrays I I Phys. Rev. Lett. — 2002. — V. 88, N. 6, — P. 66 101^.
- W.S. Yang, F. Jona. Atomic structure of Ge{lll} and reactions with Al. // Solid State Communications. — 1982. — V. 42. N. 1. — P.49−53.
- F. Ringeisen, J. Derrien, E. Daugy, J. M. Layet, P. Mathiez and F. Salvan. Formation and properties of the copper silicon (lll) interface. // J. Vac. Sci. Technol. B. — 1983, —V. 1. — P. 546.
- St. Tosch and H. Neddermeyer. Nucleation and growth of Cu and Ag on Si (l 11)7×7. // J. Microscopy. — 1988. — V. 152. — P. 415.
- St. Tosch and H. Neddermeyer. Nucleation of Cu on Si (l 11)7×7 and atomic structure of the Cu/Si (l 11) interface. // Surf. Sci. — 1989. — V. 211−212. — P. 133−142.
- T. Yasue, T. Koshikawa, H. Tanaka and I. Sumita. Initial stage of Cu growth on Si (l 11)7×7 surface studied by scanning tunneling microscopy. //Surf. Sci. — 1993. — V. 287 288, —P. 1025−1029.
- S. A. Chambers, G. A. Howell, T. R. Greenlee and J. H. Weaver. Characterization of intermixing at metal-semiconductor interfaces by angle-resolved Auger-electron emission: Cu/Si (lll)-7*7. // Phys. Rev. B. — 1985. — V. 31. — P. 6402−6410.
- M. Hanbucken, G. Le Lay and V. Vlassov. Study of intermixing of noble metals/Si (100) and Si (lll) interfaces at LNT, RT and HT. // 18th Int. Conf. Phys. Semiconduc. — 1987. — V. 1. — P. 347−350.
- S. A. Chambers, T. R. Greenlee, G. A. Howell and J. H. Weaver. Quantitative interdiffusion studies of noble metal/Si (l 11) 7×7 interfaces by angle — resolved Auger electron emission. //J. Vac. Sci. Technol. A. — 1985. —V. 3. — P. 1291.
- T. Yasue, C. Park, T. Koshikawa and Y. Kido. Structure and concentration analysis of Cu/Si (l 11) at room temperature with medium energy ion scattering. // Appl. Surf. Sci. — 1993. —V. 70−71, —P. 428−432.
- M. Mundschau, E. Bauer, W. Telieps and W. Swiech. Initial epitaxial growth of copper silicide on Si (lll) studied by low-energy electron microscopy and photoemission electron microscopy. // J. Appl. Phys. — 1989. — V. 65. — P. 4747.
- S. A. Chambers and J. H. Weaver. Thermally induced structural and compositional modification of the Cu/Si (lll) 7><7 interface. // J. Vac. Sci. Technol. A. — 1985. — V. 3. — P. 1929.
- L. Calliari, F. Marchetti and M. Sanerotti. Metastability of the Si (lll)/Cu interface: A spatially resolved Auger line-shape spectroscopy investigation. // Phys. Rev. B. — 1986. — V. 34, — P. 521−525.
- H. Dallaporta., A. Cros. Atomic bonding at the Si-Au and Si-Cu interfaces. // Surf. Sci. — 1986. — V. 178. — P. 64−69.
- Daugy E., Mathiez P., Salvan F., Layet J.M. 7x7 Si(lll)-Cu interfaces: combined LEED. AES and ELS measurements. // Surf. Sci. — 1985. — V. 154. — P. 267 283.
- Calliari L., Marchetti F., Sanerotti M. Metastability of the Si (lll)Cu interface. A spatially resolved Auger line shape spectroscopy investigation. // Phys. Rev. B. — 1986. — V. 34, N. 2. —P. 521−526.
- Dallaporta H., Cros A. Atomic bonding at the Si-Au and Si-Cu interfaces. // Surf. Sci. — 1986. — V. 178. N. 1/3. — P.64 — 69.
- Ringeisen F., Derrien J., Daugy E., Layet J.M., Mathiez P., Salvan F. Formation and properties of the copper silicon (111) interface. // J. Vac. Sci. Technol. B. — 1983. — V. 1. N.3. —P. 546−552.
- Wilson R.J., Chiang S., Salvan F. Examination of the Cu/Si (l 11)5×5 structure byscanning tunneling microscopy. // Phys. Rev. B. — 1988. — V. 38, N. 17. — P. 12 696−12 699.126
- Mortensen K. Frustration in the Si (lll) «Pseudo 5×5"Cu structure directly observed by scanning tunneling microscopy. // Phys. Rev. Lett. — 1991. — V. 66. N. 4. — P. 461−464.
- Chambers S.A., Anderson S.B., Weaver J.H. Atomic structure of the Cu-Si (lll) interface by high-energy core-level Auger electron diffraction. // Phys. Rev. B. — 1985. — V. 32. N. 2. —P. 581−587.
- Chamhliss D.D., Rhodin T.N. Electronic and atomic structure of the Cu/Si (l 1 l) quasi-5×5 overlayer. // Phys. Rev. B. — 1990. — V. 42, N. 3. — P. 1671−1683.
- Zhang Y.P., Yong K.S., Cham. H.S.O., Xu C.Q., Chen S., Wang X.S., Wee A.T.S. Quantitative analysis of Si mass transport during formation of Cu. Si (lll)-(5×5) from scanning tunneling microscopy. // Phys. Rev. B. — 2007. — V. 75, N. 7. — P. 73 407−4.
- Zegenhagen J., Forties E., Grey F., Patel J.R. Microscopic structure, discommensurations, and tiling of Si (ll l)/Cu-„5×5“. // Phys. Rev. B. — 1992. V. 46, N. 3. — P. I860−1863.
- Koshikawa T., Yasue T., Tanaka H., Sumita I., Kido Y. Surface structure of Cu Si (lll) at high temperature. // Surf. Sci. — 1995. — V. 331/333, N. 1. — P. 506- 510.
- Kawasaki T., An T., Ito H., Ichinokawa T. Atomic structure and growth of the Cu/Si (lll)-„5×5″ phase. // Surf. Sci. — 2001. —V. 187. N. 1/3. — P. 3948.
- De Santis M., Muntwiler M., Osterwalder J., Rossi G., SirottiF., Stuck A., Schlapbach L. Electronic and atomic structure of the Cu / Si (11 l)'quasi- 5×5' over layer. // Surf. Sci. —2001, —V. 177. N. 2/3. —P. 179−190.
- NejfH.-J., Matsuda L., Hengsberger M., Baumberger F., Greber T., Osterwalder J. High-resolution photoemission study of the discommensurate (5.55×5.55) Cu/Si (lll) surface layer. // Phys. Rev. B. — 2001. — V. 23. — P. 235 115−9.
- Zotov A. V., Gruznev D.V., Utas O.A., Kotlyar V.G., Saranin A.A. Multi-mode growth in Cu/Si (lll) system: Magic nanoclustering, layer-by-layer epitaxy and nanowire formation. // Surf. Sci. — 2008. —V. 602. N. 1. — P. 391- 398.
- Kemmann H., Midler F., Neddermeyer H. AES. LEED and TDS studies of Cu on Si (lll)7×7 and Si (100)2×1.//Surf. Sci. — 1987. — V. 192. N. 1. —P. 11−26.
- Nakatani S., Kuwahara Y“ Kuramoehi H» Ihkahashi T., Aono M. Study of thei (lll)"5×5"-Cu surface structure by X-ray diffraction and scanning tunneling microscopy. // Jpn. J. Appl. Phys. —2001. —V. 10. N. 7A. — P. L695-L697.
- Takayanagi K, Tanishiro Y., Ishitsuka T., Akiyama K. In-situ UHV electron microscope study of metal-silicon surfaces. // Appl. Surf. Sci. — 1989. V. 41/42. — P. 337 341.
- Yasue T., Koshikawa T., Jalochowski M., Bauer E. Dynamic observations of the formation of thin Cu layers on clean and hydrogen-terminated Si (lll) surfaces. // Surf. Sci. — 2001. — V. 480. N. 3. — P. 118−127.
- H. Kemmann, F. Muller, and H. Neddermeyer. ES, LEED and TDS studies of Cu on Si (lll)7×7 and Si (100)2×1.//Surf. Sci. — 1987.— V. 192. —P. 11−26.
- M. Bohringer, Q. D. Jiang, R. Berndt, W. Schneider, and J. Zegenhagen. Discommensurations, Epitaxial Growth and Island Formation in Ge (lll):Cu. // Surf. Sci. — 1996. —V. 367. —P. 245.
- Ch. Bai. Scanning tunneling microscopy and its applications. // Shanghai, Springer, 2000.
- A.J. Melmed. The art and science and other aspects of making sharp tips. // J. Vac. Sci. Technol. B. — 1991. —V. 9. — P. 601.
- Swartzentruber B.S. Direct Measurement of Surface Diffusion Using Atom-Tracking Scanning Tunneling Microscopy. // Phys. Rev. Lett. — 1996. — V.76, N.3. — P459−462.
- B.S. Swartzentruber, A.P. Smith, and H. Jonsson. Experimental and Theoretical Study of the Rotation of Si Ad-dimers on the Si (100) Surface. // Phys.Rev.Lett. — 1996. — V. 22, —P. 2518−2521.
- X.R. Qin, B.S. Swartzentruber and M.G. Lagally. Diffusional kinetics of SiGe dimers on Si (100) using atom-tracking scanning tunneling microscopy. // Phys. Rev. Lett. — 2000. — V. 85. —P. 3660−3663.
- R.L. Lo, M.S. Ho, I.S. Hwang, T.T. Tsong. Diffusion by bond hopping of hydrogen atoms on the Si (l 1 l)-7×7 surface. // Phys. Rev. B. — 1998. — V. 58. — P. 9867.
- T. Sato, S. Kitamura, M. Iwatsuki. Surface diffusion of adsorbed Si atoms on the Si (l 11)7×7 surface studied by atom-tracking scanning tunneling microscopy. // J. Vac. Sci. Technol. A. — 2000. — V. 18. — P. 960−964.
- P. P. Jelinek, M. Ondrejcek, J. Slezak, V. Chab. Experimental and theoretical studies of single Pb atom dynamics in one Si (lll)-(7×7) unit cell. // Surf. Sci. — 2003. — V. 544. —P. 339−347.
- Z. Kuntova, P. Jelinek, V. Chab, Z. Chvoj. Single atom diffusion of Pb on a Si (l 1 l)-7×7 surface. // Surf. Sci. — 2004. — V. 566/568. — P. 130−136.
- M.S. Ho, I.W. Wang, C.C. Su. Dynamics of copper atoms on Si (lll)-7×7 surfaces. // Surf. Sci. — 2007. — V. 601. — P. 3974−3978.
- J. Osiecki, H. Kato, A. Kasuya, S. Suto. Diffusion and clustering of Ag atoms on Si (l 11)7×7 surface. // Jpn. J. Appl. Phys. — 2006. — V. 45. — P. 2056−2058.
- I. Ostadal, P. Kocan, P. Sobotik, J. Pudl. Early stages of submonolayer growth of Ag on Si (l 11)7×7 observed by scanning tunneling microscopy. // Jpn. J. Appl. Phys. — 2006. — V. 45. P. 2170−2174.
- M.-S. Ho, C.-C. Su, T.-T. Tsong. Dynamical Study of Single Silver Atoms on Si (l 11)-7×7 Surfaces. // Jpn. J. Appl. Phys. — 2006. — V. 45. — P. 2382−2385.
- K. Wang, G. Chen, C. Zhang, M.M.T. Loy, X. Xiao. Intermixing of intrabasin and interbasin diffusion of a single Ag atom on Si (l 1 l)-(7×7). // Phys. Rev. Lett. — 2008. — V. 101. — P. 266 107.
- C.M. Chang, CM. Wei. Diffusion of an adsorbed Si atom on the Si (l ll)-(7×7) surface. // Phys. Rev. B. — 2003. — V. 67. — P. 33 309.
- Y.L. Wang, A.A. Saranin, A.V. Zotov, M.Y. Lai, H.H. Chang. Random and ordered arrays of surface magic clusters. // Internation. Rev. Phys. Chem. — 2008. — V. 27. — P. 317 360.
- D.A. Tsukanov, M.V. Ryzhkova, D.V. Gruznev, O.A. Utas, KG. Kotlyar, A.V. Zotov, A.A. Saranin. Self-assembly of conductive Cu nanowires on Si (lll)"5×5"-Cu surface. // Nanotechnology. — 2008. — V. 19. — P. 245 608.
- H. Brune, M. Giovannini, K. Bromann, K. Kern. Self-organized growth of nanostructure arrays on strain-relief patterns. // Nature. — 1998. — V. 394. — P. 451.
- J.E. Demuth, U.K. Koehler, RJ. Hamers, P. Kaplan, Phys. Rev. Lett. 62 (1989)641.
- J. Zegenhagen, E. Fontes, F. Grey, J.R. Pat el. Microscopic structure, discommensurations, and tiling of Si (lll)/Cu-«5×5». // Phys. Rev. B. — 1992. — V. 46. — P. 1860.
- M. Kawamura, N. Paul, V. Cherepanov, and B. Koigtlander. Nanowires and nanorings at the atomic level. // Phys. Rev.Lett. — 2003. — V. 91. — P. 96 102.
- Gruznev D.V. Olyanich D.A., Chubenko D.N., Saranin A.A., ZotovA.V. 4×1 to 7×3 transition in the In/Ge^Sii-x (l 11) system induced by varying the substrate lattice constant. // Phys. Rev. B. — 2007. — V. 76. — P. 73 307.
- K. Fleischer, S. Chandola, N. Esser, W. Richter, and J. F. McGilp. Reflectance anisotropy spectroscopy of Si (l 1 l)-(4xl)-In. // Phys. Status Solidi A. — 2001. — V. 188. — P 1411−1416.
- J. R. Ahn, J. H. Byun, H. Koh, E. Rotenberg, S. D. Kevan, and H. W. Yeom. Mechanism of gap opening in a triple-band Peierls system: In atomic wires on Si. // Phys. Rev. Lett. — 2004. — V. 93. — P. 106 401.
- J. H. Cho, J. Y. Lee, and L. Kleinman. Electronic structure of one-dimensional indium chains on Si (ll 1). // Phys. Rev. B. — 2005. — V. 71, —P. 81 310.
- S. J. Park, H. W. Yeom, J. R. Ahn, and I. W. Lyo. Atomic-scale coexistence and fluctuation at the quasi-one-dimensional metal-insulator transition. // Phys. Rev. Lett. — 2005. — V. 95. —P. 126 102.
- J. Guo, G. Lee, and E. W. Plummer. Intertwinned electronic and structural phase transitions in the In/Si (l 11) interface. // Phys. Rev. Lett. — 2005. — V. 95. — P. 46 102.
- G. Lee, J. Guo, and E. W. Plummer. Real-space observation of nanoscale inhomogeneities and fluctuations in a phase transition of a surfacce quasi-one-dimensional system: In/Si (l 11). // Phys. Rev. Lett. — 2005. — V. 95. — P. 116 103.
- C. Gonzalez, F. Flores, and J. Ortega. Soft phonon, dynamical fluctuations, and a reversible phase transition: Indium chains on silicon. // Phys. Rev. Lett. —2006. — V. 96. — P. 136 101.
- J. L. Marser and M. Y. Chou. Energetics of the Si (ll 1) and Ge (l 11) surfaces and the effect of strain. // Phys. Rev. B. — 1993. — V. 48. — P. 5374−5385.
- Z. Zhang, Q. Fu, H. Zhang, Y. Li, Y. Yao, D. Tan, andX. Bao. Enhanced methanol dissociation on nanostructured 2D A1 overlayers. //J. Phys. Chem. — 2007. — V. 111. P. 1 352 413 530.
- M. Bohringer, P. Molinas-Mata, E. Artacho, and J. Zegenhagen. Microscopic Structure of the Discommensurate Phases in Ge (lll)/Ga. 2. Domain Superstructure and Discommensurations. // Phys. Rev. B. — 1995. — V. 51. — P. 9965−9972.