Синтез и свойства тонкопленочных гетероструктур на основе ниобия, олова, индия
Диссертация
Комплексным исследованием с помощью методов: резерфордовского обратного рассеяния, рентгенофазового анализа, растровой электронной микроскопии, атомно-силовой микроскопии, получены экспериментальные данные о характере фазообразования и микроструктуры, распределения компонентов по глубине, о протяженности переходных по концентрации областей в пленочных системах: ниобий, олово — ниобий, индий… Читать ещё >
Список литературы
- Bewlay В.Р. Characterisation of silicide precipitates in Nb-Si and Nb-Ti-Si alloys / B.P. Bewlay et all. // Phil Mag A — 2001.- V. 81. — P. 1967−1978.
- Bewlay B.P. The balance of mechanical and environmental properties of a multi-element niobium-niobium silicide based in situ composite / B.P. Bewlay, M.R. Jackson, H.A. Lipsitt // Metall Mater Trans A 1996. — V. 27. — P. 38 013 808.
- Mendiratta M.G. Strength and toughness of a Nb-Nb5Si3 composite / M.G. Mendiratta, D.M. Dimiduk // Metall Mater Trans A 1993. — V. 24. — P. 501 504.
- Рязанов B.B., Обознов B.A., Больгинов B.B., Феофанов А. К., Материалы симпозиума «НАНОФИЗИКА И НАНОЭЛЕКТРОНИКА» Нижний Новгород. 2005. — Т. 1.-С.56.
- Ryazanov V. V. Superconductor-ferromagnet-superconductor pi-junctions / V. V. Ryazanov et all. // J. Low Temp. Phys. 2004. — V. 136. — P. 385.
- Oboznov V. A. Double-reversal thickness dependence of critical current in superconductor-ferromagnet-superconductor Josephson junctions / V. A. Oboznov et all. // arXiv: cond-mat/508 573 2005.
- Kastalsky A. Observation of pair currents in superconductor-semiconductor contacts / A. Kastalsky et all. // Phys. Rev. Lett. 1991. — V. 67. — P. 3026.
- Nguyen C., Kroemer H., Ни H. Anomalous Andreev conductance in InAs-AlSb quantum well structures with Nb electrodes / C. Nguyen, H. Kroemer, H. Hu // Phys. Rev. Lett. 1992. — V. 69. — P. 2847.
- Takayanagi H., Akazaki Т., Nitta J. Observation of Maximum Supercurrent Quantization in a Superconducting Quantum Point Contact / H. Takayanagi, T. Akazaki, J. Nitta // Phys. Rev. Lett. 1995. — V. 75. — P. 3533.
- Mur L.C. Experimental indication for supercurrents carried by opened transport channels / L.C. Mur et all. // Phys. Rev. B. 1996. — V. 54. — P. 2327.
- Минайчев В.Е. Технология полупроводниковых приборов и изделий микроэлектроники: В 10 кн. Учеб. пособие. Кн. 6. Нанесение пленок в вакууме / В. Е. Минайчев. М.: Высш. шк., 1989. — 110 с.
- Данилин Б.С. Магнетронные распылительные системы / Б. С. Данилин, В. К. Сырчин. М.: Радио и связь, 1982. — 72 с.
- Пилянкевич А.Н. О механизме образования пленок, получаемых реакционным ионно-плазменным осаждением / А. Н. Пилянкевич, В. Ю. Куликовский, JI.P. Шагинян // Поверхность. 1991. — № 12. — С. 24−28.
- Палатник JI.C. Механизмы образования и структура конденсированных пленок / JI.C. Палатник, М. Я. Фукс, В. М. Косевич. М.: Наука, 1972. — 320 с.
- Третьяков Ю.Д. Твердофазные реакции / Ю. Д. Третьяков. М.: Химия, 1978.-360 с.
- Палатник JI.C., Сорокин В. К. Основы пленочного полупроводникового материаловедения / JI.C. Палатник, В. К. Сорокин. М.: Энергия, 1973. -285 с.
- Kelly R. On the nature of the phases formed when metals are implanted with oxigen or nitrogen / R. Kelly // Radiated Effects. 1982. — V. 64. — P. 205 — 220.
- Brown I.G. Recent advances in surfase processing with metall plasma and ion beams / I.G. Brown et all. // Surfase and Coatings Technology. 1999. — V. 112.-P. 271−277.
- Sigmund P. Energy density and time constant of heavy-ion-induced-elastic-collision spikes in solids / P. Sigmund // Appl. Phys. Lett. 1974. — V. 25. — N 3. -P. 169−171.
- Takagi T. Ion-surface interactions during thin film deposition / T. Takagi // J. Vac. Sci. Technol. A. 1983. — V. 2. — N. 2. — P. 382 — 388.
- Распыление твердых тел ионной бомбардировкой: Физическое распыление одноэлементных твердых тел. Пер. с англ./ Под ред. Р. Бериша. М.: Мир, 1984. — 336 с.
- Лейман К. Взаимодействие излучения с твердым телом и образование элементарных дефектов / К. Лейман. М.: Атомиздат, 1979. — 290 с.
- Риссел X., Руче И. Ионная имплантация. / X. Риссел, И. М. Руче. М.: Наука, 1983.-360 с.
- Лю 3., Майер Дж. Ионная имплантация в полупроводники и другие материалы. Предельный уровень легирования, достижимый при ионной имплантации / 3. Лю, Дж. Майер. М.: Мир, 1980. — С. 236 — 253.
- Bewlay В.P. The Nb-Ti-Si ternary phase diagram: Determination of solid state phase equlibria in Nb and Ti rich alloys / B.P. Bewlay, M.R. Jackson, R.R. Bishop //J Phase Equill- 1998.- V. 19.-P. 577−586.
- Bewlay B.P. The Nb-Ti-Si ternary phase diagram: Evaluation of liquid-solid phase equilibria in Nb and Ti-rich alloys / B.P. Bewlay, M.R. Jackson, H.A. Lipsitt // J Phase Equill 1997. — V. 18. — P. 264−278.
- Диаграммы состояния двойных металлических систем / Под. ред. Н. П. Лякишева. -М.: Машиностроение, 2000. С. 548−549.
- Yue Chen, Jia-Xiang Shang, Yue Zhang. Bonding characteristics and site occupancies of alloying elements in different Nb5Si3 phases from first principles / Chen Yue, Shang Jia-Xiang, Zhang Yue // Physical Review В 2007. -V. 76.-P. 18 4204(1)-18 4204(8).
- Левинский Ю. В. p-T-x диаграммы состояния двойных металлических систем / справочник под ред. Ю. В. Левинского. — М., Металлургия. — С. 176−220.
- Wehrmann R. Silicides in High Temperature Technology / R. Wehrmann, I. E. Campbell, E. M. Sherwood // Electrochemical Society 1956. — P. 151.
- Murarka S. P., Fraser D. B. Silicide formation in thin cosputtered (tantalum + silicon) films on poly crystalline silicon and Si02 / S. P. Murarka, D. B. Fraser //J. Appl. Phys. 1980. -V. 51. — P. 1593.
- Mochizuki T. Film properties of MoSi2 and their application to self-aligned MoSi2 gate MOSFET / T. Mochizuki, T. Tsujimaru, M. Kashiwagi, Y. Nishi // IEEE Trans. Electron Devices. 1980. — V. ED-27. — P. 1431.
- Kemper M. J. H., Oosting P. H. Crystallization and resistivity of amorphous titanium silicide films deposited by coevaporation / M. J. H. Kemper, P. H. Oosting // J. Appl. Phys. 1982. — V. 53. — P. 6214.
- Chow T. P. Properties of sputtered molybdenum silicide thin films / T. P. Chow, D. H. Bower, R. L. Van Art, W. Katz // J. Electrochem. Soc. 1983. — V. 130. — P. 952.
- Murarka S. P., Read M. H., Chang С. C. Hexagonal WSi2 in cosputtered (tungsten and silicon) mixture / S. P. Murarka, M. H. Read, С. C. Chang // J. Appl. Phys.-1981.-V. 52. P. 7450.
- Chow T. P. The effect of implantation of phosphorus into sputtered MoSi2 thin films / T. P. Chow, C. S. Grant, W. Katz, G. Gildenblat, R. F. Reihl // J. Electrochem. Soc. 1982. -V. 130. — P. 933.
- Chow Т., Steckl J. Refractory Metal Silicides: Thin-Film Properties and Processing Technology / T. Chow, J. Steckl // IEEE Transactions on Electron Devices 1983. -V.ED-30,№. 11.-P. 1480−1497.
- Nakanishi T. Formation of metal-rich silicides in the initial stage of interfa-cial reactions in Nb/Si systems / T. Nakanishi, M. Takeyama, A. Noya // Journal of Applied Physics 1995. -V. 77, № 2. — P. 948−950.
- Walser R. M., Bene R. W. First phase nucleation in silicon-transition-metal planar interfaces / R. M. Walser, R. W. Bene // Appl. Phys. Lett. 1976. — V. 28. — P. 624.
- Ronay M. Reinvestigation of first phase nucleation in planar metal-Si reaction couples/M. Ronay // Appl. Phys. Lett. 1983. — V. 42, P. 577.
- Lur W., Chen L. J. Growth kinetics of amorphous interlayer formed by in-terdiffiision of polycrystalline Ti thin-film and single-crystal silicon / W. Lur, L. J. Chen // Appl. Phys. Lett. 1989. — V.54, P. 1217.
- Lee T. L., Chen L. J. Interfacial reactions of ultrahigh vacuum deposited yttrium thin films on (11 l) Si at low temperatures / T. L. Lee, L. J. Chen // J. Appl. Phys. 1993. — V. 73, P. 8258.
- Wang W. H., Wang W. K. Silicide formation in Co/amorphous Si multilayers / W. H. Wang, W. K. Wang // J. Appl. Phys. 1994. — V. 76, P. 1578.
- Kidson G. V., Some aspects of the growth of diffusion layers in. binary systems / G. V. Kidson //J. Nucl. Mater. 1961. — V. 3, P. 21.
- Gosele U., Tu K. N. Growth kinetics of planar binary diffusion couples: «Thin-film case» versus «bulk cases» / U. Gosele, K. N. Tu // J. Appl. Phys. — 1992.-V. 53, P. 3252.
- Zhang L., D. Ivey G. A kinetic model for silicide formation through thin-film metal-silicon reactions / L. Zhang, D. G. Ivey // J. Appl. Phys. 1992. — V. 71, P. 4314.
- Chow T.P. Thermal oxidation of niobium silicides thin films / T.P. Chow, K. Hamzeh, A.J. Stecki // Journal of Applied Physics 1983. — V. 54, № 5. — P. 2716−2719.
- Rude C.D. Characterization of NbSi2 thin films / C.D. Rude, T.P. Chow, A.J. Stecki // Journal of Applied Physics 1982. — V. 53, № 8. — P. 5703−5709.
- Zhang M. Initial phase formation in Nb/Si multilayers deposited at different temperatures / M. Zhang, W. Yu, W.H. Wang and W.K. Wang // Journal of Applied Physics 1996. — V. 80, № 3. — P. 1422−1427.
- Murarka S.P. / S.P. Murarka // J. Vac. Sci. Technol 1980. — V. 17. — P. 775.
- Kanayama T. Niobium silicides formation induced by Ar-ion bombardment / T. Kanayama, H. Tanoue, T. Tsurushima // Applied Physics Letters- 1979. -V. 35, № 3.-P. 222−224.
- Horache E. Niobium disilicide formation by rapid thermal processing: Resistivity-grain growth correlation and the role of native oxide / E. Horache, J.E. Fisher // Journal of Applied Physics 1990. — V. 68, № 9. — P. 4652−4655.
- Sugano T. Chemical deposition of Mo on Si / T. Sugano, H.-K. Chou, M. Yoshida, T. Nishi // Japan. J. Appl. Phys. 1968. — V. 7. — P. 1028.
- Shaw J. M., Amick J. A. Vapor-deposited tungsten as a metallization and interconnection material for silicon devices / J. M. Shaw, J. A. Amick //
- RCA Rev. 1970. -V. 31. — P. 306.
- Melliar-Smith С. M. Chemically vapor deposited tungsten for semiconductor metallizations / С. M. Melliar-Smith, A. C. Adams, R. H. Kaiser, and R. A. Kushner // J. Electrochem. Soc. 1974. — V. 121. — P. 298.
- Mochizuki T. A new MOS process using MoSi2 as a gate material / T. Mo-chizuki, K. Shibata, T. Inoue, K. Ohuchi // Japan. J. Appl. Phys. 1978. — V. 17, supp. 17−1.-P. 37.
- Crowder B. L., Zirinsky S. 1 im MOSFET VLSI technology. Part VII: Metal silicide interconnection technology-A future perspective / B. L. Crowder, S. Zirinsky // IEEE Trans. Electron Devices. -1979. V. ED-26. — P. 369.
- Murarka S. P. Silicides for VLSI Applications / S. P. Murarka. New York: Academic Press, 1983.
- Mohammadi F. Silicides for interconnection technology / F. Mohammadi // Solid State Technol. 1980. -V. 24, №. 1. — P. 65.
- D’Heurle F. M. Material properties of silicides and device technology implications / F. M. d’Heurle // in Proc. 1st Int. Symp. VLSISci Technol. 1982. -P. 194.
- Chow T. P., Steckl A. J. The development of refractory metallization for VLSI / T. P. Chow, A. J. Steckl // Electrochem. SOC. Fall
- Meeting, Extended Abstracts. 1982. — V. 82−2. — P. 353.
- Murarka S. P., Fraser D. B. Silicide formation in thin cosputtered (titanium + silicon) films on poly crystalline silicon and Si02 / S. P. Murarka, D. B. Fraser // J. Appl. Phys. 1980. — V. 51. — P. 350.
- Chow T. P., Steckl A. J. Size effects in MoSi2-Gate MOSFET’s / T. P. Chow, A. J. Steckl // Appl. Phys. Lett.- 1980. V. 36. — P. 297.
- Mohammadi F., Saraswat К. C. Properties of sputtered tungsten silicide for MOS integrated circuit applications / F. Mohammadi, К. C. Saraswat // J. Electrochem. SOC. 1980. -V. 127. — P. 450.
- Miller R. J. Resistivity and oxidation of tungsten silicide thin films / R. J. Miller // Thin Solid Films. 1980. — V. 72. — P. 427.
- Geipel H. J. Composite silicide gate electrodes-interconnections for VLSI technologies / H. J. Geipel, N. Hsieh, M. H. Ishaq, C. W. Koburger, F. R. White // IEEE Trans. Electron Devices. 1980. — V. ED-27. — P. 1409.
- Murarka S. P. Cosputtered molybdenum silicides on thermal Si02 / S. P. Murarka, D. B. Fraser, T. F. Retajczck, Jr., Т. T. Sheng // J. Appl. Phys. 1980. -V. 51.-P. 5380.
- Nowicki R. S., Moulder J. F. Comparison of the properties of molybdenum silicides films deposited by dc magnetron and rf diode codeposition / R. S. Nowicki, J. F. Moulder//J. Electrochem. Soc. 1981. — V. 128.-P. 562.
- Cappelletti P. Molybdenum silicide: Is it suitable for interconnections in VLSI / P. Cappelletti, T. Mori, G. Pignatel, G. Ferla, F. Nava, G. Ottaviani // in Semiconductor Silicon. 1981.
- Angilello J. Tantalum silicide films deposited by dc sputtering / J. Angilello et all. // J. Electron. Mat. 1981. -V. 10. — P. 59.
- Kemper M. J. H., Oosting P. H. Crystallization and resistivity of amorphous titanium silicide films deposited by coevaporation / M. J. H. Kemper, P. H. Oosting//J. Appl. Phys. 1982. -V. 53. — P. 6214.
- Denison D. R. Properties of MoSi2 and WSi2 deposited by dual target sputtering / D. R. Denison // Electronic Materials Conf., abstract T-2, 1981.
- Chow T. P. Properties of sputtered molybdenum silicide thin films / T. P. Chow et all. // Electrochem. Soc. 1983. — V. 130. — P. 952.
- Chow T. P. Thin film properties of sputtered niobium silicide on SiC>2, and on n+ poly-Si // T. P. Chow et all. // Electrochem. Soc. Fall Meeting, Extended Abstracts. 1983. -V. 82−2. — P. 446.
- Van Gurp G. J. The growth of metal silicide layers on silicon / G. J. van Gurp // Electrochemical Society. 1977. — P. 342.
- Ottaviani G. Review of binary formation by thin film interactions / G. Otta-viani // J. Vac. Sci Technol. 1979. — V. 16. — P. 1112.
- Yanagisawa S., Fukuyama T. Preparation of molybdenum silicide films by reactive sputtering / S. Yanagisawa, T. Fukuyama // J. Electrochem. Soc. -1980.-V. 127.-P. 1120.
- Kehr D. E. R. Chemical vapor deposition of the silicides of molybdenum, niobium and tantalum / D. E. R. Kehr // 6th Int. Conf. Chemical Vapor Deposition. 1977.-P. 511.
- Lehrer W. I. Low temperature LPCVD deposition of tantalum silicide / W. I. Lehrer et all. // 1st Int. Symp. VLSI Sci Technol. 1982. — P. 258.
- Wang K. L. Composite TiSi2/n+ poly-Si low resistivity gate electrode and interconnect for VLSI device technology / K. L. Wang et all. // IEEE Trans. Electron Devices. 1982. — V. ED-29. — P. 547.
- Matthias B.T. Superconductivity of Nb3Sn / B.T. Matthias et all. // Phys. Rev.-1954.-V. 95.-P. 1435.
- Brock G.E. Metallurgy of Advanced Electronic Materials / G.E. Brock, Ed. -New York: Interscience. 1962. — P. 71 -87.
- Enstrom R.E. Phase equilibria and crystallography for the niobium-tin system / R.E. Enstrom // J. Met. 1964. — V. 97.
- Vieland L.J. Structure and properties of Nb3Sn / L.J. Vieland // RCA Rev. — 1964.-V. 25.-P. 366.
- Van Vucht J.H.N., Van Ooijen D.J., Bruning H.A.C. The physical and structural properties of superconducting A15-type Nb-Sn alloys / J.H.N, van Vucht, D.J. Van Ooijen, H.A.C. Bruning // Philips Res. Rep. 1965. — V. 20. — P. 136 161.
- Charlesworth J.P., Macphail I., Madsen P.E. Niobium-Tin constitution diagram and related studies / J.P. Charlesworth, I. Macphail, P.E. Madsen // J. Mater. Sci. 1970. -V. 5. — P. 580−603.
- Perpeet M., Hein M. A. Enhanced electron-phonon coupling of Ti-doped superconducting Nb3Sn films investigated at microwave frequencies / M. Perpeet, M. A. Hein // Phys. Rev. B. -2005.- V. 72. P. 94 502−1-8.
- Schiffinan R.A., Bailey D.M. Thermodynamics of the In-, congruently Subliming Niobium-Tin System / R.A. Schiffinan, D.M. Bailey // High Temp. Sci. -1982.-V. 15.-P. 165−177.
- Boom R. Cohesion in Metals / R. Boom. North Holland, Amsterdam: Transition Metal Alloys. — 1988. — P. 390−401.
- Shunk F^A. Constitution of Binary Alloys, Second Supplement / F.A.Shunk. New York: McGraw Hill. — 1969.
- Weber W., Matthesis L.F. Electronic structure of tetragonal Nb3Sn / W. Weber, L.F. Matthesis // Phys. Rev. B. -2005. V. 25, № 4. — P. 2270−2284.
- Besson R., Guyot S., Legris A. Atomic-scale study of diffusion in A15 Nb3Sn / R. Besson, S. Guyot, A. Legris // Phys. Rev. B. -2007.- V. 75. P. 54 105−1-7.
- Smith R.J., Ghosh A. Characterization of thin Nb3Sn diffusion layers on Nb (110): Low-energy electron-diffraction and photoemission studies / R.J. Smith, A. Ghosh//Phys. Rev. B. -1983. V. 28, № 6. — P. 3043−3048.
- Kolosov V. N., Novichkov V. Yu. Zero-Current Deposition of Superconducting Nb3Sn Coatings from Molten Salts / V. N. Kolosov, V. Yu. Novichkov // Inorganic Materials. 2003. — V. 39, №. 5. — P. 485−491.
- Toffolon C., Servant C., Sundman B. Thermodynamic Assessment of the Nb-Sn System / C. Toffolon, C. Servant, B. Sundman // Journal of Phase Equilibria. 1998. — V. 19, № 5. — P. 479−485.
- Toffolon C. Reassessment of the Nb-Sn System / C. Toffolon et all. // Journal of Phase Equilibria. 2002. — V. 23, № 2. — P. 134−139.
- Patankar S.N., Froes F.H. Transformation of Mechanically Alloyed Nb-Sn Powder to Nb3Sn / S.N. Patankar, F.H. Froes // Metallurgical and materials Transactions A. 2004. — V. 35A. — P. 3009−3012.
- Kolosov V. N. Criteria for Selecting Substrates for Nb3Sn Electrodeposi-tion / V. N. Kolosov // Inorganic materials. 2005. — V. 41, № 9. — P. 961−971.
- Okamoto H. Phase Diagrams of Indium Alloys and Their Engineering Applications / H. Okamoto (eds.). Indium Corporation of America, Utica, N.Y., and Materials Information Soc., Materials Park, Ohio. — 1992.
- Jeitschko W., Nowotny H., Benesovsky F. Die H-Phasen Ti2TlC, Ti2PbC, Nb2InC, Nb2SnC und Ta2GaC / W. Jeitschko, H. Nowotny, F. Benesovsky // Monatsh. Chem. 1964. — V. 95. — P. 1040.
- Villars P., Girgis K. Phase Diagrams of Indium Alloys and Their Engineering Applications / P. Villars, K. Girgis: Z. Metallkd. 1982. — P. 169.
- Akazava H. Synchrotron-radiation-excited epitaxy of Ge with GeH4 / H. Akazava // J. Appl. Phys. 1996. — V. 79, № 12. — P. 9396.
- Shindo W., Ohmi T. Ion energy, ion flux, and ion mass effects on low-temperature silicon epitaxy using low-energy ion bombardment process / W. Shindo, T. Ohmi // J. Appl. Phys. 1996. — V. 79, № 5. — P. 2347−2351.
- Morgan S.P., Morgan D.V. An ion-assisted deposition system for use in the fabrication of submicron dimension device ohmic contacts / S.P. Morgan, D.V. Morgan // Thin Solid Films. 1996. — V. 272, № 1. — P. 107−111.
- Lesler K.G., Sonnenberg N., Cima M.G. The development of biaxial alignment in yttria-stabilized zirconia films fabricated by ion beam assisted deposition / K.G. Lesler, N. Sonnenberg, M.G. Cima // J. Electron. Mater. 1996. -V. 25, № 1.-P. 35−42.
- Misra A., Natasi N. Limits of residual stress in Cr films sputter deposited on biased substrates / A. Misra, N. Natasi // Appl. Phys. Lett. 1999. — V. 75, № 20. — P. 3123 — 3125.
- Наумов B.B. Рост YSZ пленок на кремниевых подложках / В. В. Наугмов и др. // Неорганические материалы. — 1998. Т. 34, № 1. — С. 57 — 61.
- Наумов В.В. Исследование влияния низкоэнергетичной ионной стимуляции на плотность и кристаллическую структуру тонких /В.В. Наумов и др. //ЖТФ. -2001. Т. 71, Вып. 8.-С. 92−97.
- Наумов В.В. Влияние низкоэнергетичной ионной бомбардировки на кристаллическую структуру и сверхпроводящие свойства пленок ниобия /
- B.В. Наумов и др. // ЖТФ. 2004. — Т. 74, Вып. 4. — С. 48 — 52.
- Goa Р.Е. Real-time magneto-optical imaging of vortices in superconducting NbSe2 / P.E. Goa et all. // Supercond. Sci. Technol. 2001. — V. 14. — P. 729 -731.
- Rude C.D., Chow T.P., Stecki A.J. Characterization of NbSi2 thin films /
- C.D. Rude, T.P. Chow, A.J. Stecki // J. Appl. Phys. 1982. — V. 53, № 8. — P. 5703−5709.
- Gubin A. I. Dependence of magnetic penetration depth on the thickness of superconducting Nb thin films / A. I. Gubin et all. // Phys. Rev. B. 2005. — V. 72.-P. 64 503.
- Lemberger T. R. Penetration depth study of very thin superconducting Nb films / T. R. Lemberger et all. // Phys. Rev. B. 2007. — V. 76. — P. 94 515.
- Park S. I., Geballe Т. H. Superconducting Tunneling in Ultrathin Nb Films / S.I. Park, Т.Н. Geballe // Phys. Rev. Lett. 1986. — V. 57. — P. 901.
- Mayadas F., Laibowitz R. В., Cuomo J. J. Electrical Characteristics of rf-Sputtered Single-Crystal Niobium Films / F. Mayadas, R. B. Laibowitz, J. J. Cuomo // J. Appl. Phys. 1972. — V. 43. — P. 1287.
- Turneaure S. J., Lemberger T. R., Graybeal J. M. Effect of Thermal Phase Fluctuations on the Superfluid Density of Two-Dimensional Superconducting Films / S. J. Turneaure, T. R. Lemberger, J. M. Graybeal // Phys. Rev. Lett. -2000.-V. 84.-P. 987.
- Finkel’shtein A. Superconducting transition temperature in amorphous films / A. Finkel’shtein // JETP Lett. 1987. — V. 46, № 10. — P. 513 — 517.
- Finkel’shtein A. ESR near a metal-insulator transition / A. Finkel’shtein // JETP Lett. 1987. -V. 45, № 1. — P. 46 — 49.
- Bednorz. J. G., Muller K. A. Possible high Tc superconductivity in the Ba-La-Cu-0 system / J. G. Bednorz, K. A. Muller // Zeitschrift fur Physik В Condensed Matter. 1986. — V. 64, № 2. — P. 189 — 193.
- Nagamatsu J. Superconductivity at 39 К in magnesium diboride / J. Naga-matsu et all. // Nature. 2001. — V. 410. — P. 63 — 65.
- Orlando T. P. Critical fields, Pauli paramagnetic limiting, and material parameters of Nb3Sn and V3Si / T. P. Orlando et all. // Phys. Rev. B. 1979. — V. 19.-P. 4545.
- Labbe J., Friedel J. Instabilite electronique et changement de phase cristal-line des composes du type V3Si a basse temperature / J. Labbe and J. Friedel // Journal de Physique. 1966. — V. 27, № 3. — P. 153 — 166.
- Labbe J., Friedel J. Effet de la temperature sur l’instabilite electronique et le changement de phase cristalline des composes du type V3Si a basse temperature / J. Labbe and J. Friedel // Journal de Physique. 1966. — V. 27, № 5. — P. 303 -309.
- Weber W. The phonons in high Tc A15 compounds / W. Weber // Physica В & С. 1984. — V. 126, № 2. — P. 217 — 228.
- Muller-Heinzerling Т., Fink J., Weber W. Direct observation of the peaked density of states in high-Tc A15 superconductors by electron energy-loss spectroscopy / T. Muller-Heinzerling, J. Fink, W. Weber // Phys. Rev. B. 1985. -V. 32.-P. 1850.
- Bouvier J., Bok J. The Gap Symmetry and Fluctuations in High Tc-Superconductors / J. Bouvier and J. Bok. New York.: Plenum Press, 1998. -576 P.
- Perpeet M. High-quality Nb3Sn thin films on sapphire prepared by tin vapor diffusion / M. Perpeet et all. // J. Appl. Phys. 1997. — V. 82. — P. 5021.
- Suenaga M. Superconducting critical temperatures, critical magnetic fields, lattice parameters, and chemical compositions of’bulk" pure and alloyed Nb3Sn produced by the bronze process / M. Suenaga et all. // J. Appl. Phys. 1986. -V. 59.-P. 840.
- Perpeet M., Hein M. A. Enhanced electron-phonon coupling of Ti-doped superconducting Nb3Sn films investigated at microwave frequencies / M. Perpeet, M. A. Hein // Phys. Rev. B. 2005. — V. 72. — P. 94 502.
- Perpeet M. Nb3Sn films on sapphire. A promising alternative for superconductive microwave technology / M. Perpeet // IEEE Trans. Appl. Supercond. — 1999. V. 9, Issue 2, Part 2. — P. 2496 — 2499.
- Hein M. A. Pair and Quasiparticle States of YBa2Cu307~x Films Deduced from the Surface Impedance and a Comparison with Nb3Sn / M. A. Hein et all. //Journal of superconductivity. 1999. -V. 12, № 1. — P. — 129 -138.
- Wu С. Т., Kampwirth R. Т., Hafstrom J. W. High-rate magnetron sputtering of high Tc Nb3Sn films / С. T. Wu, R. T. Kampwirth, J. W. Hafstrom // J. Vac. Sci. Technol. 1977. — V. 14, Issue 1.-P. 134 T137.
- Kampwirth R. Т., Hafstrom J. W., Wu С. T. Application of high rate magnetron sputtering to the fabrication of A-15 compounds / R. T. Kampwirth, J. W. Hafstrom, С. T. Wu // IEEE Trans. Magn. 1977. — V. 13, Issue 1. — P. 315−318.
- Andreone A. Nonlinear microwave properties of Nb3Sn sputtered superconducting films / A. Andreone et all. // J. Appl. Phys. 1997. V. 82. — P. 1736.
- Allen L. H. RF surface resistance of Nb3Sn, NbZr, and NbN thin films / L. H. Allen et all. // IEEE Trans. Magn. 1987. — V. 23. — P. 1405.
- Tinkham M. Introduction to Superconductivity / M. Tinkham. New York.: McGraw-Hill, 1975. — 296 P.
- Waldram J. R. Superconductivity of Metals and Cuprates / J. R. Waldram. -Bristol.: Institute of Physics Publishing, 1996. 410 P.
- Hardy W. N., Kamal S., Bonn D. A. in The Gap Symmetryand Fluctuations in High Tc-Superconductors / edited by J. Bok et all. New York.: Plenum Press, 1998. — 576 P.
- Marsiglio F. Coherence effects in electromagnetic absorption in superconductors / F. Marsiglio // Phys. Rev. B. 1991. — V. 44. — P. 5373.
- Marsiglio F. Eliashberg treatment of the microwave conductivity of niobium / F. Marsiglio et all. // Phys. Rev. B. 1994. — V. 50. — P. 7203.
- Blaschke R., Blocksdorf R. Influence of the inelastic electron-phonon scattering on the superconducting surface resistance / R. Blaschke, R. Blocksdorf // Zeitschrift fur Physik В Condensed Matter. 1982. — V. 49, №. 2. — P. 99.
- Muhlschlegel B. Die thermodynamischen Funktionen des Supraleiters / B. Muhlschlegel // Zeitschrift fur Physik A Hadrons and Nuclei. 1959. — V. 155, № 3. — P. 313.
- Adrian S. D. Penetration depth in layered superconductors: Application to the cuprates and conventional multilayers / S. D. Adrian et all. // Phys. Rev. B. 1995.-V. 51.-P.-6800.
- Rudman D. A., Beasley M. R. Microscopic superconducting parameters from tunneling in A15 Nb Sn / D. A. Rudman, M. R. Beasley // Phys. Rev. B. -1984.-V. 30.-P. 2590.
- Halbritter J. On surface resistance of superconductors / J. Halbritter // Zeit-schrift fur Physik A Hadrons and Nuclei. 1974. — V. 266, № 3. — P. 209.
- Shen L. Y. L. Tunneling into a High Tc Superconductor-Nb3Sn / L. Y. L. Shen 11 Phys. Rev. Lett. — 1972. — V. 29. — P. 1082.
- Labbe J., Barisic S., Friedel J. Strong-Coupling Superconductivity in V3X type of Compounds / J. Labbe, S. Barisic, J. Friedel // Phys. Rev. Lett. 1967. -V.-19.-P. 1039.
- Moore D. F. Energy gaps of the ^4−15 superconductors Nb3Sn, V3Si, and Nb3Ge measured by tunneling / D. F. Moore et all. // Phys. Rev. B. 1979. -V. 20.-P. 2721.
- Rudman D. A. A15 Nb-Sn tunnel junction fabrication and properties / D.
- A. Rudman et all. // J. Appl. Phys. 1984. — V. 55. — P. 3544.
- Hylton T. L., Beasley M. R. Effect of grain boundaries on magnetic field penetration in polycrystalline superconductors / T. L. Hylton, M. R. Beasley // Phys. Rev. B. 1989. — V. 39. — P. 1989.
- Данилин Б.С. Магнетронные распылительные системы / Б. С. Данилин,
- B.К. Сырчин. Москва: Радио и связь, 1982. — 72 с.
- Powder diffraction file (inorganic phases). Joint Committee on Powder Diffraction Standards (JCPDS). International Centre of Diffraction Data. 1995.
- Комаров Ф.Ф. Неразрушающий анализ поверхностей твердых тел ионными пучками. Минск.: Университетское, 1987. — 256 с.
- Sandrik R. / Nuclear Instruments Methods in Physics Research B. 1993. V. 75. P. 392−396.
- Кофстад П. Высокотемпературное окисление металлов / П. Кофстад. — Москва, 1969. С. 60−61,190−191,201−202, 254−262.
- Transport in superconducting niobium films for radio frequency applications / J. Halbritter // Journal of Applied Physics 2005, V. 97, P. 1 — 3.