Фотоэлектрические свойства аморфного гидрированного кремния, легированного бором
Диссертация
Средних и высоких температурах (Т> 200К) определяется рекомбинацией свободных дырок и электронов через нейтральные оборванные связи. Обосновано, что в неравновесных условиях в плёнках a-Si:H р-типа неравновесный положительный заряд локализован в хвосте валентной зоны, а неравновесный отрицательный заряд — на состояниях оборванных связей. Показано, что при этом величина неравновесного… Читать ещё >
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