Тонкие пленки и гетероструктуры на основе нанокристаллических оксидов металлов для газовых сенсоров
Диссертация
Поиск новых материалов для газовых сенсоров актуален в последнее время в связи с ухудшением экологической обстановки, особенно в области крупных промышленных центров. Для решения задач мониторинга атмосферы, в медицине, автомобилестроении и т. д. широкое распространение получили полупроводниковые газовые сенсоры резистивного типа. Принцип действия таких сенсоров основан на эффекте изменения… Читать ещё >
Список литературы
- Williams D.E. Semiconducting oxides as gas-sensitive resistors. // Sensors and Actuators B, vol.57, 1999, p. 1−16.
- Lloyd Spetc A., Uneus L., Svenningstorp H. et. al. SiC based field effect gas sensors for industrial applications. //Phys. Stat. Sol. (a), vol.185, 2001, p. 15−25.
- Zemel J.N., Keramati В., Spivak C.W., D’Amico A. NON-FET chemical sensors. // Sensors and Actuators 1981, vol.1, p.427−473.
- Williams D.E. Conduction and gas response of semiconductor gas sensor, in Solid state gas sensors (ed. Mosely P.T., Tofield B.C.). Bristol and Philadelphia, Alam Higer 1987, p.71−121.
- Mizusaki J., Koinuma H., Shimoyama J.-I., Kawasaki M., Fueki K. High temperature gravimetric study on nonstoichiometry and oxygen adsorption of Sn02. // J. Sol. State Chem., vol.88, 1990, p.443−450.
- Maier J., Gopel W. Investigations of the bulk defect chemistry of polycrystalline tin (IV) oxide. // J. Sol. State Chem., vol.72, 1988, p.293−302.
- Hirschwald W., Grunze M., Kolb D., Schulz H.J. Zinc oxide, in Current topics in materials science (ed. E. Kaldis), vol.7, North-Holland publishing company, Oxford, 1981.
- Бонч-Бруевич В.JI., Калашников С. Г. Физика полупроводников. М. Наука, 1977. 672с.
- Ржанов А.В. Электронные процессы на поверхности полупроводников. М. Наука, 1997, 480с.
- Мэни А. Связь между физическими и химическими процессами на поверхности полупроводников. В сборнике Новое в исследование поверхности твердого тела (ред. Джайядевайя Т., Ванселов Р.). М. Мир, 1977, с.306−344.
- Henrich V. E, Сох P. A. The surface science of metal oxides. Cambridge. University press. 1996. 458p.
- Зенгуил Э. Физика поверхности. M. Мир. 1990. 536с.
- Rantala Т., Lantto V. Some effects of mobile donors on electron trapping at semiconductor surfaces. // Surface Science, vol.352−354, 1996, p.765−770.
- Blazer G., Ruhl Т., Diehl C., Ulrich M., Kohl D., Nanostructured semiconductor gas sensors to overcome sensitivity limitations due to percolation effects. // Physica A, vol.266, 1999, p.218−223.
- Zemel J.N. Theoretical description of gas-film interaction on SnOx. // Thin Solid Films, vol.163, 1988, p. 189−202.
- Strassler S., Reis A. Simple models for n-type metal oxide gas sensors. // Sensors and Actuators B, vol.4, 1983, p.465−472.
- Clifford P.K., Tuma D.T. Characteristics of semiconductor gas sensors I. Steady state gas response. // Sensors and Actuators B, vol.3, 1982/1983, p.233−254
- Heiland G. Homogeneous semiconducting gas response. // Sensors and Actuators B, vol.2, 1982, p.343−361.
- Schierbaum K.D., Wiemhofer H.D., Gopel W. Defect structure and sensing mechanism of Sn02 gas sensors: comparative electrical and spectroscopic studies // Solid State Ionics, vol.28−30, 1988, p. 1631−1636.
- Geistlinger H. Electron theory of thin-film gas sensors. // Sensors and Actuators B, vol.17, 1993, p.47−60.
- Santos J.P., Agapito J.A. The interaction of oxigen with nanocrystalline Sn02 thin films in the framework of the electron theory of adsorption. // Thin Solid Films, vol.338, 1999, p.276−280.
- Barzan N. Conduction models in gas-sensing Sn02 layers: grain-size effects and ambient atmosphere influence. // Sensors and Actuators B, vol.17, 1994, p.241−246
- Mukae K. Electrical properties of grain boundaries in ceramic semiconductors. Key Engeneering Materials, vol. 125−126, 1997, p.317−330.
- Souteyrand E. Transduction electrique pour la detection de gas. in Les capteurs chimiques (ed. Pijolat C.), CMC2, Lyon, 1997, p.52−62.
- Weissenrieder K.S., Muller J. Conductivity model for sputtered ZnO-thin film gas sensors. // Thin Solid Films, vol.300, 1997, p.30−41.
- Demarne V., Grisel A., Sanjines R., Rosenfeld D., Levy F. Electrical transport properties of thin polycristalline Sn02 film sensors // Sensors and Actuators B, vol.47, 1992, p.704−708.
- Sanjines R., Demarne V., Levy F. Hall effect measurements in SnOx film sensors exposed to redusing and oxidazing gases. // Thin Solid Films, vol. 193/194, 1990, p.93 5−942.
- Rantala T., Lantto V., Rantala T. Computational approaches to the chemical sensitivity of semiconducting tin dioxide. // Sensors and Actuators B, vol.47, 1998, p. 59−64.
- McAlleer J.F., Moseley P.T., Norris J.O., Williams D.E. Tin dioxide gas sensors. // Chem. Soc. Faraday Trans., N1, vol. 83, 1987, p. 1323−1346.
- Rumyantseva M., Labeau M., Delabouglise G., Ryabova L., Kutsenok I., Gaskov A., Copper and nickel doping effect on interaction of Sn02 films with H2S. // J. Mater. Chem., vol. 7, p. 1785−1790.
- Lantto V., Romppainen P., Leppavuori S. A study of the temperature dependence of barrier energy in porous tin dioxide. // Sensors and Actuators B, vol.14, 1988, p. 149 163.
- Clifford P.K., TumaD.T. Characteristics of semiconductor gas sensors II. Transient response to temperature change. // Sensors and Actuators B, vol.3, 1982/1983, p.255−281
- Sanjines R., Levy F., Demarne V., Grisel A. Some aspects of the interaction of oxigen with policrystalline Sn02 thin films. // Sensors and Actuators B, vol. 1, 1990, p. 176 182.
- Sbervegliery G., Faglia G., Gropelli S., Nelli P. Taroni A. A novel PVD technique for the preparation of SnC>2 thin film as C2H5OH sensors. // Sensors and Actuators B, vol.7, 1992, p.721−726.
- Schierbaum K.D., Kimer U.K., Gopel W. Schottky-barrier and conductivity gas sensors based upon Pd/SnC>2 and Pt/TiCh. // Sensors and Actuators B. 1991, vol.4, p.87−97.
- Lundstrom I. Hydrogen sensitive MOS-structures. Part 1: principles and applications. // Sensors and Actuators 1981, vol.1, p.403−426.
- Lundstrom I., Soberberg D. Hydrogen sensitive MOS-structures. Part 2: Characterization. // Sensors and Actuators 1981/82, vol.2, p. 105−138.
- Ekedal L.G., Eriksson M., Lundstrom I. Hydrogen sensing mechanisms of metal-insulator interfaces. // Acc.Chem.Res. 1998, vol.31, p.249−256.
- Lundstrom I. Why bother about gas-sesitive field-effect devices ?. // Sensors and Actuators A 1996, vol.56, p.75−82.
- Fogelberg J., Dannetun H., Lundstrom I., Petersson L.G. A hydrogen sensitive palladium metal-oxide-semiconductor device as sensor for dissociating NO in atmospheres.// Vacuum 1990, vol.41, p.705−708.
- Eriksson M., Ekedal L.G. The influence of CO on the response of hydrogen sensitive Pd-MOS devices. // Sensors and Actuators B. 1997, vol.42, p.217−223.
- Filippov V.I., Terentjev A.A., Yakimov S.S. Electrode structure effect on the selectivity of gas sensors.// Sensors and Actuators B. 1995, vol.28, p.55−58.
- Lundstrom I., Spetz A., Winquist F., Ackelid U., Sundgren H. Catalytic metals and field-effect devices-a useful combination. // Sensors and Actuators B. 1990, vol.1, p. 15−20.
- Tobias P., Martensson P., Baranzah A., Salomonsson P., Lundstrom I., Abom L., Lloyd-Spetz A. Response of metal-insulator-silicon carbide sensors to different components in exhaust gases. // Sensors and Actuators B. 1998, vol.47, p. 125−130.
- Бехштенд Ф., Эндерлайн P. Поверхности и границы раздела полупроводников. М. Мир, 1990, стр. 366.
- Keramati В., Zemel J.N. Pd-thin-Si02"Si diode. I. Isothermal variation of-inducedinterfacial trapping states.// J. Appl. Phys. 1982, vol.53, p. 1091−1099.
- D’Amicon A., Fortunato G., Petrocco G., Coluzza C. Pd/a-Si:H metal-insulator-semiconductior Schottky barrier for hydrogen detection. // Appl. Phys. Lett. 1983, vol.42, p.964−965.
- D’Amico A., Fortunato G., Petrocco G., Coluzza C. Transport properties of a Pd/insulator/a-Si:H Schottky diode for hydrogen detection. // Sensors and Actuators 1983, vol.4, p.349−356.
- Keramati B., Zemel J.N. Pd-thin-SiC^-Si diode. II. Theoretical modeling and the H2response. // J. Appl. Phys. 1982, vol.53, p. l 100−1109.
- Fare T., Spetz A., Armagarth M., Lundstrom I. Quasi-static and high frequency C (V)-response of thin platinum metal-oxide-silicon structures to ammonia. // Sensors and Actuators 1988, vol. 14, p.369−386.
- Kang W.P., Kim C.K. Performance and detection mechanism of a new class of catalyst (Pd, Pt, or Ag)-adsorptive oxide (SnO or ZnO)-insulator-semiconductor gas sensors. //
- Sensors and Actuators B. 1994, vol.22, p.47−55.
- Kang W.P., Kim C.K. Novel platinum-tin oxide silicon nitride-silicon dioxide-silicon gas sensing component for oxygen and carbon monoxide gases at low temperature. // Appl.Phys.Lett. 1993, vol.63, p.421−423.
- Kang W.P., Xu J.F., Lalevic B., Poteat T.L. Sensing behavior of Pd-SnOx MIS structure used for oxygen detection. // Sensors and Actuators 1987, vol.12, p.349−366.
- Fonash S.J., Li Zh., O’Leary M.J. An extremely sensitive heterostructure for part per million detection of hydrogen in oxygen.// J. Appl. Phys. 1985, vol.58, p.4415−4419.
- Hoefer U., Bottner H., Wagner E., Kohl C.D. Highly sensitive NC^ sensor devicefeaturing a JFET-like transducer mechanism. // Sensors and Actuators B. 1998, vol.47, p.213−217.
- Gurbuz Y., Kang W.P., Davidson J.L., Kerns D.V. A novel oxygen gas sensor utilizing thin film diamond diode with catalyzed tin oxide electrode. // Sensors and Actuators B. 1996, vol.35−36, p.303−307.
- Tuyen Le T.T., Potje-Kamloth K., Liess H.-D. Electrical properties of doped polypyrrole/silicon heterojunction diodes and their response to NOx gas. // Thin Solid Films 1997, vol.292, p.293−298.
- Zhang W., Uchida H., Katsube Т., Nakatsubo Т., Nishioka Y. A novel semiconductor NO gas sensor operating at room temperature. // Sensors and Actuators B. 1998, vol.49, p.58−62.
- Hikita K., Miyayama M., Yanagida H. New approach to selective semiconductor gas sensors using a dc-biased pn heterocontact. // J.Am.Ceram.Soc. 1995, vol.78, p.865−873.
- Nakamura Y., Zhuang H., Kishimoto A., Okada O., Yanagida H. Enhanced CO and CO2 gas sensitivity of the CuO/ZnO heterocontact made by quenched CuO ceramics. //
- J.Electrochem.Soc. 1998, vol.145, p.632−638.
- Ushio Y., Miyayama M., Yanagida H. Effects of interface states on gas-sensing properties of a CuO/ZnO thin-film heterojunction. // Sensors and Actuators B. 1994, vol.17, p.221−226.
- Jung S.J., Ohsawa H., Nakamura Y., Yanagida H., Hasumi K., Okada O. Effects ofaddition on the gas sensing characteristics of CuO/ZnO heterocontact. //
- J.Electrochem.Soc. 1994, vol.141, p. L53-L55.
- Yoo D.J., Park S.J. Electrolysis of water in CuO/ZnO heterocontact humidity sensor. // J.Electrochem.Soc. 1996, vol.143, p. L89-L91.
- Traversa E. Design of ceramic materials for chemical sensors with novel properties. // J.Am.Ceram.Soc. 1995, vol.78, p.2625−2632.
- Технология тонких пленок. Справочник, (под редакцией Л. Майсвега, Р. Глэнга), М. Советское радио, 1997, том 1, 653 с.
- Golan A., Bregman J., Shapira Y., Eizenberg M. Fabrication and properties of indium oxide/n-GaAs junction. //J.Appl.Phys. 1991, vol.69, p.1494−1499.
- Morikawa H., Kohyama M., Sumi H. Crystal growth of ITO films prepared by DC magnetron sputtering on С film. // Thin Solid Films 1996, vol.281−282, N1−2, p.202−205.
- Физические величины. Справочник. (под редакцией И. С. Григорьева, Е.З.Мейлихова), М. Энергоатомиздат, 1991, 1231 с.
- Fonstad C.G., Rediker R.H. Electrical properties of high-quality stannic oxide crystals. // J. Appl. Phys. 1971, vol.42, p.2911−2918.
- Reeves G.K., Harrison H.B. Obtaining the specific contact resistance from transmission line model measurements. // IEEE Electron Device letters 1982, vol. EDL-3, N5, p. 111−113.
- Rumyantseva M.N., Gaskov A.M., Ryabova L.I., Senateur J.P., Chenevier В., Labeau M. Pyrosol spraying deposition of copper- and nickel-doped tin dioxide films. // Materials Science and Engineering B, 1996, vol.41, p.333−338.
- Gautheron В., Labeau M., Delabouglise G., Schmatz U. Undoped and Pd-doped SnO^thin films for gas sensors. // Sensors and Actuators В 1993, vol.16, p. 357−362.
- Norris J.O.W. The role of precious metal catalysts, in Solid state gas sensors (ed. Mosely P.T., Tofield B.C.). Bristol and Philadelphia, Alam Higer 1987, p. 124−137.
- Langlet M., Vautey C., Primeau N. The effect of thermal annealing on aerosol-gel deposited Si02 films: A FTIR deconvolution study. // Thin Solid Films 1997, vol.310, N1−2, p.47−56.
- Langlet M., Vautey C. Influence of the deposition parameters on the characteristics of aerosol-gel deposited thin films. // J. Sol-Gel Sci.Tech. 1997, vol.8, p.347−351.
- Burgos M., Langlet M., Vautey C. Aerosol-gel deposition and low temperature heat-treatment of Si02 layers. // Thin Solid Films, 1999, vol.347, N1−2, p.184−194.
- Advani G.N., Jordan A.G. Thin films of Sn02 as solid state gas sensors. // J. Electronic Materials 1980, vol.9, N1, p.29−49.
- Tiburcio-Silver M., Joubert J.C., Labeau M. Etudes sur la croissance, la structure et la composition de couches minces de ZnO et ZnO dope a l’indium, obtenues par procede pyrosol. // Thin Solid Films 1991, vol.197, p. 195−214.
- Pouchou J.L., Pichoir F. Un nouveau modele de calcule pour la microanalyse quantitative par spectrometrie de rayons X. Patrie II: Application a l’analyse d’echantillons heterogenes en profondeur // Rech. Aerosp. 1984, N5, p.349−367.
- Акимов Б.А., Албул A.B., Гаськов A.M., Ильин В. Ю., Лабо M., Румянцева М. Н., Рябова Л. И. Сенсорные свойства по отношению к сероводороду и электропроводность поликристаллических пленок SnC>2(Cu). // ФТП 1997, т.31, № 4, с.400−404.
- Акимов Б.А., Гаськов А. М., Лабо М., Подгузова С. Е., Румянцева М. Н. Рябова Л.И., Тадеев А. Проводимость структур на основе легированных нанокристаллических пленок Sn02 с золотыми контактами. // ФТП 1999, т. ЗЗ, N2, с.205−207.
- Samson S., Fonstad С.G. Defect structure and electronic donor levels in stannic oxide crystals. // J.Appl.Phys. 1973, vol.44, N10, p.4618−4621.
- Gaidi M., Labeau M., Chenevier В., Hazemann J.L. In-situ EXAFS analysis of the local environment of Pt partickles incorporated in thin films of SnC^ semi-conductoroxide used as gas-sensors. // Sensors and Actuators В 1998, vol.48, p.277−284.
- Donnelly J.P., Milnes A.G. The capacitance of p-n heterojunctions including the effects of interfase states. // IEEE Transactions on Electron Devices, 1967, vol.14, № 2, p.63−68.
- Madou M.J., Loo B.H., Frese K.W., Morrison S.R. Bulk and surface characterization of the silicon electrode. // Surface Science 1981, vol.108, p. 135−152.
- Turut A., Saglam M., Efeoglu H., Yalcin N., Yildrim M., Abay B. Interpreting the nonideal reverse bias C-V characteristics and importance of the dependence of Schottky barrier height on applied voltage. // Physica В 1995, vol.205, p.41−50.
- Anderson R.L. Experiments on Ge-GaAs heterojunctions. // Solid State Electronics, 1962, vol.5, p.341−351.
- J.A.Agapito, J.P.Santos. The interaction of low NO2 concentrations in air with degenerate nanocrystalline tin dioxide thin films. // Sensors and Actuators B, 1996, vol.31, p.93−97.
- Kohl D. Surface processes in the detection of reducing gases with SnC>2 based devices. // Sensors and Actuators 1989, vol.18, N1, p.71−113
- Vanheusden K., Kama S.P., Pugh R.D., Warren W.L., Fleetwood D M., Devine R.A.B., Edwards A.H. Thermally activated electron capture by mobile protons in SiC^thin films. // Appl.Phys.Lett. 1998, vol.72, N1, p.28−30.
- Vanheusden K., Warren W.L., Devine R.A.B., Fleetwood D M., Schwank J.R., Shaneyfelt M.R., Winokur P. S., Lemnios Z.J. Non-volatile memory device based on mobile protons in Si09 thin films. // Nature 1997, vol.386, N1, p.587−589.