Исследование пленок нитрида галлия, выращенных методом хлоридгидридной газофазной эпитаксии
Диссертация
Наиболее часто используемой подложкой для эпитаксии нитрида галлия является сапфир. Этот материал является изолятором, поэтому контакты к выращенным на нем приборам необходимо делать только на верхней поверхности, что уменьшает полезную площадь и увеличивает стоимость. Еще одной проблемой является низкая теплопроводность сапфира, что приводит к проблемам охлаждения мощных приборов. Одним… Читать ещё >
Список литературы
- Полевые транзисторы на основе гетероструктур AlGaN/GaN, полученных методом молекулярно пучковой эпитаксии / В. В. Волков, В. П. Иванова, Ю. С. Кузьмичев et al. // Письма в ЖТФ. — 2004. Vol. 30. — Pp. 63−67.
- Mishra, U. К. AlGaN/GaN HEMTs: An overview of device operation and applications / U. K. Mishra, P. Parikh, Y. Wu // Proceedings of the IEEE. — 2002, — Vol. 90.- Pp. 1022−1031.
- Alur, S. Fabrication of AlGaN/GaN MESFET And It’s Applications in Biosensing: Ph.D. thesis / Auburn University. — 2010.
- Широкозонные полупроводники / Ю. Г. Шретер, Ю. Т. Ребане, В. А. Зыков, В. Г. Сидоров. — СПб, Наука, 2001.
- III—nitrides: Growth, characterization, and properties / S. C. Jain, M. Willander, J. Narayan, R. V. Overstraet. en // Journal of Applied Physics. — 2000. Vol. 87, no. 3. — Pp. 965−1006.
- Maruska, H. The preparation and properties of vapor-deposited single-crystaline GaN / H. Maruska, J. Tietjen // Applied Physics Letters.— 1969.- Vol. 15, no. 10.- Pp. 327−329.
- Pankove, J. I. GaN electroluminescent diodes / J. I. Pankove, E. A. Miller, J. E. Berkeyheiser // RCA Review. 1971. — Vol. 32. — P. 383.
- Pankove, J. I. GaN blue light-emitting diodes / J. I. Pankove, E. A. Miller, J. E. Berkeyheiser // Journal of Luminescence. — 1972. — Vol. 15. — P. 84.
- Luminescence of insulating Be-doped and Li-doped GaN / J. I. Pankove, M. Duffy, E. A. Miller, J. E. Berkeyheiser // Journal of Luminescence. — 1972.-Vol. 8.-Pp. 89−93.
- Maruska, H. P. Preparation of Mg-doped GaN diodes exhibiting violet electroluminescence / H. P. Maruska, W. C. Rhines, D. A. Stevenson // Materials Research Bulletin. 1972. — Vol. 7. — P. 777.
- Stimulated Emission and Laser Action in Gallium Nitride / R. Dingle, K. L. Shaklee, R. F. Leheny, R. B. Zetterstrom // Applied Physics Letters. 1971. — Vol. 19, no. 1. — Pp. 5−7.
- Metalorganic vapor phase epitaxial growth of a high quality GaN film using an A1N buffer layer / H. Amano, N. Sawaki, I. Akasaki, Y. Toyoda // Applied Physics Letters. 1986. — Vol. 48, no. 5. — Pp. 353−355.
- Electron beam effects on blue luminescence of zinc-doped GaN / H. Amano, I. Akasaki, T. Kozawa et al. // Journal of Luminescence. — 1988. — Vol. 4041. Pp. 121−122.
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI) / H. Amano, M. Kito, K. Hiramatsu, I. Akasaki // Japanese Journal of Applied Physics. — 1989.— Vol. 28, no. Part 2, No. 12.-Pp. L2112-L2114.
- Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED / I. Akasaki, H. Amano, M. Kito, K. Hiramatsu // Journal of Luminescence. — 1991. — Vol. 48−49. — Pp. 666−670.
- Photoluminescence characteristics of AlGaN-GaN-AlGaN quantum wells / M. A. Khan, R. A. Skogman, J. M. V. Hove et al. // Applied Physics Letters. — 1990. Vol. 56, no. 13. — Pp. 1257−1259.
- Metalorganic Vapor Phase Epitaxial Growth and Properties of GaN/Alo.iGao.cN Layered Structures / K. Itoh, T. Kawamoto, H. Amano et al. // Japanese Journal of Applied Physics. — 1991.— Vol. 30, no. Part 1, No. 9A. — Pp. 1924−1927.
- Nakamura, S. p-GaN/n-InGaN/n-GaN Double-Heterostructure Blue-Light-Emitting Diodes / S. Nakamura, M. Senoh, T. Mukai // Japanese Journal of Applied Physics. 1993. — Vol. 32, no. Part 2, No. 1A/B. — Pp. L8-L11.
- High dislocation densities in high efficiency GaN-based light-emitting diodes / S. D. Lester, F. A. Ponce, M. G. Craford, D. A. Steigerwald // Applied Physics Letters. 1995. — Vol. 66, no. 10.- Pp. 1249−1251.
- Nakamura, S. The Blue Laser Diode / S. Nakamura, G. Fasol. — Springer-Verlag (Heidelberg), 1997.
- GaN: Processing, defects, and devices / S. J. Pearton, J. C. Zolper, R. J. Shul, F. Ren // Journal of Applied Physics. 1999. — Vol. 86, no. 1. -Pp. 1−78.
- Metal semiconductor field effect transistor based on single crystal GaN / M. A. Khan, J. N. Kuznia, A. R. Bhattarai, D. T. Olson // Applied Physics Letters. 1993. — Vol. 62, no. 15. — Pp. 1786−1787.
- High-temperature GaN/SiC heterojunction bipolar transistor with high gain / J. Pankove, S. Chang, H. Lee et. al. // Electron Devices Meeting. — 1994. Pp. 389 — 392.
- Fujitsu, C. GaN HEMT technology for base-station amplifiers / C. Fujitsu // III-Vs Review. 2005. — Vol. 18. — P. 16.
- Wood, S. Advances in high power GaN HEMT transistors.— Microwave Engineering Online. — 2009. — September.
- Ehrentraut, D. Technology of gallium nitride crystal growth / D. Ehrentraut, E. Meissner, M. Bockowski. — Springer Verlag, 2010. — Vol. 133.
- Deposition of thick GaN layers by HVPE on the pressure grown GaN substrates / B. Lucznik, B. Pastuszka, I. Grzegory et al. // Journal of crystal growth. 2005. — Vol. 281, no. 1. — Pp. 38−46.
- Blue laser on high N2 pressure-grown bulk GaN / I. Grzegory, M. Bockowski, S. Krukowski et al. // Acta physica Polonica. A.— 2001.— Vol. 100.— Pp. 229−232.
- Preparation of GaN single crystals using a Na flux / H. Yamane, M. Shi-mada, S. Clarke, F. DiSalvo // Chemistry of materials. — 1997. — Vol. 9, no. 2. Pp. 413−416.
- Growth of high-quality large GaN crystal by Na flux LPE method / F. Kawa-mura, M. Imade, M. Yoshimura et al. // Proceedings of SPIE. — Vol. 7216. — 2009. P. 72160B.
- Structural, Optical, and Homoepitaxial Studies on the Bulk GaN Single Crystals Spontaneously Nucleated by the Na-Flux Method / T. Onuma, T. Yamada, H. Yamane, S. Chichibu // Applied physics express. — 2009. — Vol. 2, no. 9. P. 91 004.
- Growth of GaN crystals by Na flux LPE method / Y. Mori, Y. Kitaoka, M. Imade et al. // physica status solidi (a). — 2010, — Vol. 207, no. 6.— Pp. 1283−1286.
- Paskova, T. GaN substrates for Ill-nitride devices / T. Paskova, D. Hanser, K. Evans // Proceedings of the IEEE. — 2010. — Vol. 98, no. 7. — Pp. 13 241 338.
- Size-dependent photoconductivity in MBE-grown GaN-nanowires / R. Calarco, M. Marso, T. Richtcr et al. // Nano letters. — 2005.— Vol. 5, no. 5. Pp. 981−984.
- Mechanism of molecular beam epitaxy growth of GaN nanowires on Si (111) / R. Debnath, R. Meijers, T. Richter et al. // Applied physics letters. 2007. — Vol. 90. — P. 123 117.
- Mechanism for spontaneous growth of GaN nanowires with molecular beam epitaxy / K. Bertness, A. Roshko, L. Mansfield et al. // Journal of Crystal Growth. 2008. — Vol. 310, no. 13. — Pp. 3154−3158.
- Optical anisotropy and light extraction efficiency of MBE grown GaN nanowires epilayers / A. Henneghien, G. Tourbot, B. Daudin et al. // Optics Express. 2011. — Vol. 19, no. 2. — Pp. 527−539.
- Properties of free-standing GaN bulk crystals grown by HVPE / Y. Melnik, A. Nikolaev, I. Nikitina et al. // Materials Research Society Symposium Proceedings / Materials Research Society. Vol. 482. — 1998. — Pp. 269 276.
- Preparation and properties of free-standing HVPE grown GaN substrates / S. Kim, Y. Lee, D. Moon et al. // Journal of crystal growth. — 1998. — Vol. 194, no. l.-Pp. 37−42.
- Liu, L. Substrates for gallium nitride epitaxy / L. Liu, J. Edgar // Materials Science and Engineering: R: Reports. — 2002. — Vol. 37, no. 3. — Pp. 61−127.
- Matthews, J. Defects in epitaxial multilayers: I. Misfit dislocations / J. Matthews, A. Blakeslee // Journal of Crystal Growth. — 1974. — Vol. 27. Pp. 118−125.
- Microstructures of GaN islands on a stepped sapphire surface / C. C. Kim, J. H. Je, P. Ruterana et al. // Journal of Applied Physics. — 2002. — Vol. 91, no. 7. Pp. 4233−4237.
- Critical thickness of GaN thin films on sapphire (0001) / C. Kim, I. Robinson, J. Myoung et al. // Applied physics letters. — 1996. — Vol. 69, no. 16. — Pp. 2358−2360.
- Etzkorn, E. Cracking in GaN Films Grown by Hydride Vapor Phase Epitaxy: Ph.D. thesis / University of California, Santa-Barbara. — 2005.
- Growth defects in GaN films on sapphire: The probable origin of threading dislocations / X. Ning, F. Chien, P. Pirouz et al. // Journal of Materials Research. 1996. — Vol. 11, no. 3. — Pp. 580−592.
- Dislocation generation in GaN heteroepitaxy / X. Wu, P. Fini, E. Tarsa et al. // Journal of crystal growth. 1998. — Vol. 189. — Pp. 231−243.
- Origins of threading dislocations in GaN epitaxial layers grown on sapphire by metalorganic chemical vapor deposition / V. Narayanan, K. Lorenz,
- W. Kim, S. Mahajan // Applied Physics Letters.— 2001.— Vol. 78.— P. 1544.
- Gallium nitride epitaxy on (0001) sapphire / V. Narayanan, K. Lorenz, W. Kim, S. Mahajan // Philosophical Magazine A.— 2002, — Vol. 82, no. 5. Pp. 885−912.
- Oliver, R. Insights into the origin of threading dislocations in GaN/ AlO from atomic force microscopy / R. Oliver, M. Kappers, C. Humphreys // Applied physics Letters. 2006. — Vol. 89.- P. 11 914.
- Bending in HVPE grown GaN films: origin and reduction possibilities / T. Paskova, L. Becker, T. Bottcher et al. // Physica Status Solidi ©. — 2007. Vol. 4, no. 7. — Pp. 2256−2259.
- Effect of sapphire-substrate thickness on the curvature of thick GaN films grown by hydride vapor phase epitaxy / T. Paskova, L. Becker, T. Bottcher et al. // Journal of Applied Physics. 2007. — Vol. 102, no. 12. — P. 123 507.
- Etzkorn, E. V. Cracking of GaN films / E. V. Etzkorn, D. R. Clarke // Journal of Applied Physics. 2001. — Vol. 89, no. 2. — Pp. 1025−1034.
- Williams, A. Formation of large-area freestanding gallium nitride substrates by natural stress-induced separation of GaN and sapphire / A. Williams, T. Moustakas // Journal of Crystal Growth. 2007.- Vol. 300, no. 1, — Pp. 37−41.
- Role of TiN Film in the Fabrication of Freestanding GaN Wafers Using Hydride Vapor Phase Epitaxy with Void-Assisted Separation / A. Usui, T. Ichihashi, K. Kobayashi et al. // Physica Status Solidi (a). — 2002, — Vol. 194, no. 2. Pp. 572−575.
- Self-separation of thick two inch GaN layers grown by HVPE on sapphire using epitaxial lateral overgrowth with masks containing tungsten / C. Hennig,
- E. Richter, М. Weyers, G. Trankle // Physica Status Solidi ©.— 2007.— Vol. 4, no. 7.- Pp. 2638−2641.
- Freestanding high quality GaN substrate by associated GaN nanorods self-separated hydride vapor-phase epitaxy / C. Chao, C. Chiu, Y. Lee et al. // Applied Physics Letters. 2009. — Vol. 95, no. 5. — P. 51 905.
- Stress evolution during metalorganic chemical vapor deposition of GaN / S. Hearne, E. Chason, J. Han et al. // Applied Physics Letters. — 1999. — Vol. 74, no. 3. Pp. 356−358.
- Tavernier, P. R. Photoluminescence from laser assisted debonded epitaxial GaN and ZnO films / P. R. Tavernier, P. M. Verghese, D. R. Clarke // Applied Physics Letters. 1999. — Vol. 74, no. 18. — Pp. 2678−2680.
- A Novel Technique for Growing Crack-Free GaN Thick Film by Hydride Vapor Phase Epitaxy / H. Huang, K. Chen, L. Tu et al. // Japanese Journal of Applied Physics. 2008. — Vol. 47, no. 11. — Pp. 8394−8396.
- Preble, E. Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement. 2011. — US Patent 7,897,490.
- Doerner, M. Stresses and deformation processes in thin films on substrates / M. Doerner, W. Nix // Critical Reviews in Solid State and Materials Sciences. 1988. — Vol. 14, no. 3. — Pp. 225−268.
- Stress and Defect Distribution of Thick GaN Film Homoepitaxially Regrown on Free-Standing GaN by Hydride Vapor Phase Epitaxy / K. Chen, Y. Yeh,
- Y. Wu et al. // Japanese Journal of Applied Physics. — 2010.— Vol. 49, no. 9.-P. 91 001.
- The role of high-temperature island coalescence in the development of stresses in GaN films / T. Bottcher, S. Einfeldt, S. Figge et al. // Applied Physics Letters. 2001. — Vol. 78, no. 14. — Pp. 1976−1978.
- Homoepitaxy on GaN substrate with various treatments by metalorganic vapor phase epitaxy / K. Chen, Y. Wu, Y. Yeh et al. // Journal of Crystal Growth. 2010. — Vol. 318. — Pp. 454−459.
- Effect of Mg, Zn, Si, and O on the Lattice Constant of Gallium Nitride Thin Films / G. Sudhir, Y. Peyrot, J. Krueger et al. // Materials research society symposium proceedings / Materials research society. — Vol. 482. — 1998. — Pp. 525−530.
- Stress relaxation in Si-doped GaN studied by Raman spectroscopy / I. Lee, I. Choi, C. Lee et al. // Journal of Applied Physics.— 1998.- Vol. 83, no. 11.-Pp. 5787−5791.
- The effect of Si doping on the defect structure of GaN/AlN/Si (lll) / S. I. Molina, A. M. Sanchez, F. J. Pacheco et al. // Applied Physics Letters. 1999. — Vol. 74, no. 22. — Pp. 3362−3364.
- In situ measurement of stress generation arising from dislocation inclination in AlGaN: Si thin films / J. D. Acord, I. C. Manning, X. Weng et al. // Applied Physics Letters. 2008. — Vol. 93. — P. 111 910.
- Stoney, G. The tension of metallic films deposited by electrolysis / G. Stoney // Proceedings of the Royal Society of London. Series A, Containing Papers of a Mathematical and Physical Character. — 1909. — Vol. 82. — Pp. 172−175.
- Roll, K. Analysis of stress and strain distribution in thin films and substrates / K. Roll // Journal of Applied Physics. — 1976. — Vol. 47, no. 7. — Pp. 3224−3229.
- Klein, C. A. How accurate are Stoney’s equation and recent modifications /
- C. A. Klein // Journal of Applied Physics.- 2000.- Vol. 88, no. 9.— Pp. 5487−5489.
- Freund, L. B. Extensions of the Stoney formula for substrate curvature to configurations with thin substrates or large deformations / L. B. Freund, J. A. Floro, E. Chason // Applied Physics Letters. — 1999. — Vol. 74, no. 14. Pp. 1987−1989.
- Finot, M. Small and large deformation of thick and thin-film multi-layers: effects of layer geometry, plasticity and compositional gradients / M. Finot, S. Suresh // Journal of the Mechanics and Physics of Solids. — 1996. — Vol. 44, no. 5.-Pp. 683−721.
- Townsend, P. H. Elastic relationships in layered composite media with approximation for the case of thin films on a thick substrate / P. H. Townsend,
- D. M. Barnett, T. A. Brunner // Journal of Applied Physics.— 1987.— Vol. 62, no. 11.- Pp. 4438−4444.
- Roll, K. Michelson interferometer for deformation measurements in an UHV system at elevated temperatures / K. Roll, H. Hoffmann // Review of Scientific Instruments. 1975. — Vol. 47, no. 9.- Pp. 1183−1185.
- Segmuller, A. Automatic X-ray diffraction measurement of the lattice curvature of substrate wafers for the determination of linear strain patterns /
- A. Segmuller, J. Angilelo, S. J. L. Placa // Journal of Applied Physics. — 1980.- Vol. 51, no. 12. Pp. 6224−6230.
- Real-time stress evolution during Si 1-х Ge x heteroepitaxy: dislocations, islanding, and segregation / J. Floro, E. Chason, S. Lee et al. // Journal of Electronic Materials. 1997. — Vol. 26, no. 9. — Pp. 969−979.
- Cullity, B. Elements of X-ray Diffraction / B. Cullity, S. Stock. Addison-Wesley Reading, MA, 1978. — Vol. 2.
- Д.К. Воуэн. Высокоразрешающая рентгеновская дифрактометрия и топография / Д. К. Боуэн, Б. К. Таннер. — Наука СПб, 2002.
- Bowen, D. X-ray metrology in semiconductor manufacturing / D. Bowen, D. Bowen, B. Tanner. CRC Press, 2006.
- Fewster, P. High-resolution diffraction-space mapping and topography / P. Fewster // Applied Physics A: Materials Science & Processing. — 1994. — Vol. 58, no. 3. Pp. 121−127.
- Lattice parameters of gallium nitride / M. Leszczynski, H. Teisseyre, T. Sus-ki et al. // Applied Physics Letters. 1996. — Vol. 69, no. 1.- Pp. 73−75.
- Structural characteristics and lattice parameters of hydride vapor phase epitaxial GaN free-standing quasisubstrates / V. Darakchieva, T. Pasko-va, P. P. Paskov et al. // Journal of Applied Physics. 2005.- Vol. 97, no. l.-P. 13 517.
- Harima, H. Properties of GaN and related compounds studied by means of Raman scattering / H. Harima // Journal of Physics: Condensed Matter. — 2002. Vol. 14. — P. R967.
- Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H-SiC / V. Y. Davydov, N. S. Averkiev, I. N. Goncharuk et al. // Journal of Applied Physics. 1997. — Vol. 82, no. 10. — Pp. 50 975 102.
- Raman determination of phonon deformation potentials in a:-GaN / F. De-mangeot, J. Frandon, M. Renucci et al. // Solid State Communications. —1996, — Vol. 100, no. 4.- Pp. 207−210.
- Wagner, J.-M. Phonon deformation potentials of alpha-GaN and -A1N: an ab initio calculation / J.-M. Wagner, F. Bechstedt // Applied Physics Letters. 2000. — Vol. 77, no. 3. — Pp. 346−348.
- Biaxial strain dependence of exciton resonance energies in wurtzite GaN / A. Shikanai, T. Azuhata, T. Sota et al. // Journal of Applied Physics. —1997. Vol. 81, no. 1. — Pp. 417−424.
- Gil, B. Valence-band physics and the optical properties of GaN epilayers grown onto sapphire with wurtzite symmetry / B. Gil, O. Briot, R. Aulom-bard // Physical Review B. 1995. — Vol. 52, no. 24. — Pp. 17 028−17 031.
- Koch, R. The intrinsic stress of polycrystalline and epitaxial thin metal films / R. Koch // Journal of Physics: Condensed Matter.— 1994.— Vol. 6. P. 9519.
- Physical origins of intrinsic stresses in Volmer-Weber thin films / J. Floro, E. Chason, R. Cammarata, D. Srolovitz // MRS bulletin. 2002. — Vol. 27, no. l.-Pp. 19−25.
- Vacancy defect distribution in heteroepitaxial a-plane GaN grown by hydride vapor phase epitaxy / F. Tuomisto, T. Paskova, S. Figge et al. // Journal of crystal growth. 2007. — Vol. 300, no. 1. — Pp. 251−253.
- Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy / J. Oila, J. Kivioja, V. Ranki et al. // Applied physics letters. — 2003. — Vol. 82, no. 20. Pp. 3433−3435.
- Effect of Si doping on strain, cracking, and microstructure in GaN thin films grown by metalorganic chemical vapor deposition / L. T. Romano, C. G. Van de Walle, J. W. Ager III et al. // Journal of Applied Physics. — 2000. Vol. 87. — P. 7745.
- Hoffman, R. Physics of thin films / R. Hoffman. — Academic, New York, 1966.-P. 211.
- Doljack, F. The origins of stress in thin nickel films / F. Doljack, R. Hoffman // Thin Solid Films. 1972. — Vol. 12, no. 1. — Pp. 71−74.
- Hoffman, R. Stresses in thin films: The relevance of grain boundaries and impurities / R. Hoffman // Thin Solid Films. 1976. — Vol. 34. — Pp. 185 190.
- Nix, W. Crystallite coalescence a mechanism for intrinsic tensile stresses in thin films / W. Nix, B. Clemens // Journal of Materials Research.— 1999. — Vol. 14, no. 8. — Pp. 3467−3473.
- Freund, L. B. Model for stress generated upon contact of neighboring islands on the surface of a substrate / L. B. Freund, E. Chason // Journal of Applied Physics. 2001. — Vol. 89, no. 9. — Pp. 4866−4873.
- Optical properties of GaN epilayers on sapphire / M. Tchounkeu, O. Briot, B. Gil et al. // Journal of Applied Physics.- 1996.- Vol. 80, no. 9.-Pp. 5352−5360.
- Raghavan, S. In situ observation of coalescence-related tensile stresses during metalorganic chemical vapor deposition of GaN on sapphire / S. Raghavan, J. Acord, J. Redwing // Applied Physics Letters.— 2005.— Vol. 86.— P. 261 907.
- Crystallization of free standing bulk GaN by HVPE / B. Lucznik, B. Pas-tuszka, I. Grzegory et al. // Physica status solidi ©.— 2006.— Vol. 3.— Pp. 1453−1456.
- Park, S. S. Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy / S. S. Park, I. W. Park, S. H. Choh // Japanese Journal of Applied Physics. 2000. — Vol. 39, no. Part 2, No. IIB. — Pp. L1141-L1142.
- Bending in HVPE GaN free-standing films: effects of laser lift-off, polishing and high-pressure annealing / T. Paskova, V. Darakchieva, P. Paskov et al. // Physica status solidi ©. 2006. — Vol. 3. — Pp. 1475−1478.
- Romanov, A. E. Stress relaxation in mismatched layers due to threading dislocation inclination / A. E. Romanov, J. S. Speck // Applied Physics Letters. — 2003. Vol. 83, no. 13. — Pp. 2569−2571.
- Annihilation of threading dislocations in GaN/AlGaN / N. Kuwano, T. Tsu-ruda, Y. Adachi et al. // Physica Status Solidi (a).- 2002.— Vol. 192, no. 2.-Pp. 366−370.
- Relaxation of compressively-strained AlGaN by inclined threading dislocations / D. M. Follstaedt, S. R. Lee, P. P. Provencio et al. // Applied Physics Letters. 2005. — Vol. 87. — P. 121 112.
- Strain relaxation in AlGaN multilayer structures by inclined dislocations / D. M. Follstaedt, S. R. Lee, A. A. Allerman, J. A. Floro // Journal of Applied Physics. 2009. — Vol. 105. — P. 83 507.
- Hanser, D. Inclined dislocation-pair relaxation mechanism in homoepitaxial green GalnN/GaN light-emitting diodes / D. Hanser, C. Wetzel // Physical Review B. 2010. — Vol. 81. — P. 125 325.
- Si doping effect on strain reduction in compressively strained Alo.49Gao.51N thin films / P. Cantu, F. Wu, P. Waltereit et al. // Applied Physics Letters. 2003. — Vol. 83, no. 4. — Pp. 674−676.
- Tensile stress generation and dislocation reduction in Si-doped AlGaN films / I. C. Manning, X. Weng, J. D. Acord et al. // Journal of Applied Physics. 2009. — Vol. 106. — P. 23 506.
- Tanaka, S. Anti-Surfactant in Ill-Nitride Epitaxy-Quantum Dot Formation and Dislocation Termination / S. Tanaka, M. Takeuchi, Y. Aoyagi // Japanese Journal of Applied Physics. — 2000. — Vol. 39, no. Part 2, No. 8B. Pp. L831-L834.
- Flexible boundary conditions and nonlinear geometric effects in atomic dislocation modeling / J. Sinclair, P. Gehlen, R. Hoagland, J. Hirth // Journal of Applied Physics. 1978. — Vol. 49, no. 7. — Pp. 3890−3897.
- Seeger, A. Density changes of crystals containing dislocations / A. Seeger, P. Haasen // Philosophical Magazine. 1958. — Vol. 3. — Pp. 470−475.
- Hildebrandt, G. The Discovery of the Diffraction of X-rays in Crystals—A Historical Review / G. Hildebrandt // Crystal Research and Technology. — 1993. Vol. 28, no. 6. — Pp. 747−766.
- High resolution X-ray diffraction and X-ray topography study of GaN on sapphire / J. Chaudhuri, M. Ng, D. Koleske et al. // Material Science and Engineering. 1999. — Vol. B64. — Pp. 99−106.
- Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films / B. Heying, X. H. Wu, S. Keller et al. // Applied Physics Letters. 1996. — Vol. 68. — Pp. 643−645.
- Ayers, J. The measurement of threading dislocation densities / J. Ayers // Journal of Crystal Growth. 1994. — Vol. 135. — Pp. 71−77.
- Kurtz, A. D. Effect of Dislocations on the Minority Carrier Lifetime in Semiconductors / A. D. Kurtz, S. A. Kulin, B. L. Averbach // Physical Review. 1956.-Feb. — Vol. 101, no. 4, — Pp. 1285−1291.
- Stirland, D. J. Quantitative defect etching of GaAs on Si: Is it possible? / D. J. Stirland // Applied Physics Letters.— 1988, — Vol. 53, no. 24.— Pp. 2432−2434.
- Gay, P. The estimation of dislocation densities in metals from X-ray data / P. Gay, P. Hirsch, A. Kelly // Acta Metallurgies — 1953, — Vol. 1.— Pp. 315−319.
- Dunn, C. Comparison of dislocation densities of primary and secondary rccrystalization grains of Si-Fe / C. Dunn, E. Koch // Acta Mctallurgica. — 1957. Vol. 5. — Pp. 548-x.
- Hordon, M. X-ray measurements of dislocation density in deformed copper and alluminium single crystals / M. Hordon, B. Averbach // Acta Metalurgica. 1961. — Vol. 9. — Pp. 237−247.
- Ayers, J. Post-growth thermal annealing of GaAs on Si (001) grown by organometallic vapor phase epitaxy / J. Ayers, L. Schowalter, S.K.Ghandhi // Journal of Crystal Growth. 1992. — Vol. 125. — Pp. 329 335.
- Bowen, D. K. High Resolution X-Ray Diffractometry And Topography / D. K. Bowen, B. K. Tanner. CRC Press, USA, 1998.
- Cullity, B. D. Elements of X-ray diffraction / B. D. Cullity- Ed. by Morris Cohen. — Addison-Wesley Publishing Company, 1956.
- Microstructure of heteroepitaxial GaN revealed by x-ray diffraction / R. Chierchia, T. Bottcher, H. Heinke et al. // Journal of Applied Physics. — 2003. Vol. 93. — Pp. 8918−8925.
- Halliwell, M. A. G. The interpretation of X-ray rocking curves from III— V semiconductor device structures / M. A. G. Halliwell, M. H. Lyons, M. J. Hill // Journal of Crystal Growth. 1984. — Vol. 68. — Pp. 523 531.
- Defect structure of epitaxial GaN films determined by transmission electi on microscopy and triple-axis X-ray diffractometry / T. Metzger, R. Hopler,
- E. Born et al. // Philosophical Magazine A. — 1998. — Vol. 77. — Pp. 10 131 025.
- Analysis of the Defect Structure of Epitaxial GaN / H. Heinke, V. Kirchner, S. Einfcldt, D. Hommel // Physica status solidi (a). — 1999. — Vol. 176.— Pp. 391−397.
- X-ray characterization of thick GaN layers grown by HVPE / R. Korbu-towicz, J. Kozlowski, E. Dumiszewska, J. Serafinczuk // Crystal research Technology. 2005. — Vol. 40. — Pp. 503−508.
- Williamson, G. X-Ray broadering from filed aluminium and wolfram / G. Williamson, W. Hall // Acta metalurgica. 1953. — Vol. 1. — Pp. 22−31.
- Schoening, F. R. L. Strain and particle size values from X-ray line breadths /
- F. R. L. Schoening // Acta Crystallographica. — 1965. Vol. 18. — Pp. 975 976.
- Scardi, P. Line broadening analysis using integral breadth methods: a critical review / P. Scardi, M. Leoni, R. Delhez // Journal of applied crystallography. 2004. — Vol. 37, no. 3. — Pp. 381−390.
- Bragg and Laue X-ray diffraction study of dislocations in thick hydride vapor phase epitaxy GaN films / V. Ratnikov, R. Kyutt, T. Shubina et al. // Journal of Applied Physics. 2000. — Vol. 88, no. 11. — Pp. 6252−6259.
- Direct measurement of twist mosaic in epitaxial GaN / T. A. Lafford, P. A. Ryan, D. E. Joyce et al. // Physica Status Solidi (a). — 2003. — Vol. 195. Pp. 265−270.
- Kozlowski, J. Structure Characterization of (Al, Ga) N Epitaxial Layers by Means of X-Ray Diffractometry / J. Kozlowski, R. Paszkiewicz, M. Tlacza-la // Physica status solidi (b). 2001. — Vol. 228. — Pp. 415−418.
- Determination of the azimuthal orientational spread of GaN films by X-ray diffraction / Y. J. Sun, O. Brandt, T. Liu et al. // Applied Physics Letters. — 2002. Vol. 81. — Pp. 4928−2930.
- Srikant, V. Mosaic structure in epitaxial thin films having large lattice mismatch / V. Srikant, J. S. Speck, D. R. Clarke // Journal of Applied Physics. — 1997. Vol. 82, no. 9. — Pp. 4286−4295.
- X-ray diffraction analysis of the defect structure in epitaxial GaN / H. Heinke, V. Kirchner, S. Einfeldt, D. Hommel // Applied Physics Letters. 2000. — Vol. 77. — Pp. 2145−2147.
- Determination of twist angle of in-plane mosaicspread of GaN films by highresolution X-ray diffraction / X. Zheng, H. Chen, Z. Yan et al. // Journal of Crystal Growth. 2003. — Vol. 255. — Pp. 63−67.
- Schwarzschild, M. M. Theory of the Double X-Ray Spectrometer / M. M. Schwarzschild // Physical Review. 1928. — Aug. — Vol. 32, no. 2. — Pp. 162−171.
- Weyher, J. Characterization of wide-band-gap semiconductors (GaN, SiC) by defect-selective etching and complementary methods / J. Weyher // Superlattices and microstructures. — 2006. — Vol. 40, no. 4−6. — Pp. 279 288.
- Orthodox etching of HVPE-grown GaN / J. Weyher, S. Lazar, L. Macht et al. // Journal of Crystal Growth. — 2007. Vol. 305, no. 2.— Pp. 384 392.
- Jasinski, J. Extended defects and polarity of hydride vapor phase epitaxy GaN / J. Jasinski, Z. Liliental-Weber // Journal of electronic materials. — 2002.- Vol. 31, no. 5.- Pp. 429−436.
- Influence of growth rate on the structure of thick GaN layers grown by HVPE / T. Paskova, E. Goldys, R. Yakimova et al. // Journal of crystal growth. 2000. — Vol. 208, no. 1−4. — Pp. 18−26.
- Nearly stress-free substrates for GaN homoepitaxy / M. Hermann, D. Gogo-va, D. Siche et al. // Journal of crystal growth. — 2006. — Vol. 293, no. 2. — Pp. 462−468.
- Darakchieva, V. On the lattice parameters of GaN / V. Darakchieva, B. Monemar, A. Usui // Applied Physics Letters. — 2007. — Vol. 91, no. 3. — P. 31 911.
- Freestanding GaN-substrates and devices / C. Miskys, M. Kelly, O. Am-bacher, M. Stutzmann // Physica status solidi ©.— 2003.— Vol. 6.— Pp. 1627−1650.
- Method for modulating the wafer bow of free-standing GaN substrates via inductively coupled plasma etching / K. Chen, Y. Yeh, Y. Wu et al. // Journal of Crystal Growth. 2010. — Vol. 312. — Pp. 3574−3578.
- Freund, L. Thin film materials: stress, defect formation, and surface evolution / L. Freund, S. Suresh. — Cambridge University Press, 2003.
- Механические напряжения в пленках GaN выращенных на подложках с маской / В. В. Вороненков, А. И. Цюк, Р. И. Горбунов et al. // 8-ая Всероссийская конференция «Нитриды галлия, индия и аллюмшшя -структуры и приборы» / ФТИ им. Иоффе, — 2011.— Pp. 65−66.
- Palisaitis. Epitaxial growth of thin films / Palisaitis, Vasiliauskas, Ferro// Physics of Advanced Materials Winter School. — 2008.
- In-Situ Monitoring of GaN Growth by Hydride Vapor Phase Epitaxy / D. Martin, J. Carlin, V. Wagner et al. // Physica Status Solidi (a). — 2002. — Vol. 194, no. 2. Pp. 520−523.
- Hydride vapor phase epitaxial growth of thick GaN layers with in-situ optical monitoring / J. Wang, X. Hu, Y. Zhang et al. // Journal of Crystal Growth. 2009. — Vol. 311, no. 10.- Pp. 3033−3036.
- Observation of growth modes during metal-organic chemical vapor deposition of GaN / G. Stephenson, J. Eastman, C. Thompson et al. // Applied Physics Letters. 1999. — Vol. 74. — P. 3326.
- Layer-by-layer growth of GaN induced by silicon / A. Munkholm, C. Thompson, M. Murty et al. // Applied Physics Letters.— 2000.— Vol. 77.— P. 1626.
- Robinson, I. Crystal truncation rods and surface roughness / I. Robinson // Physical Review B. 1986. — Vol. 33. — Pp. 3830−3836.172. http://www.laytec.de.
- Step bunching on the vicinal GaN (0001) surface / M. Ramana Murty, P. Fini, G. Stephenson et al. // Physical Review B.- 2000.- Vol. 62, no. 16. Pp. 10 661−10 664.
- The effect of H on morphology evolution during GaN metalorganic chemical vapor deposition / J. Han, T. Ng, R. Biefeld et al. // Applied Physics Letters. 1997. — Vol. 71. — P. 3114.
- Two-step growth of high quality GaN using V/III ratio variation in the initial growth stage / S. Kim, J. Oh, J. Kang et al. // Journal of crystal growth. 2004. — Vol. 262, no. 1−4. — Pp. 7−13.
- In situ and ex situ evaluation of the film coalescence for GaN growth on GaN nucleation layers / S. Figge, T. Bottcher, S. Einfeldt, D. Hommel // Journal of crystal growth. 2000. — Vol. 221, no. 1−4. — Pp. 262−266.
- Sasaki, T. Analysis of two-step-growth conditions for GaN on an A1N buffer layer / T. Sasaki, T. Matsuoka // Journal of applied physics.— 1995.— Vol. 77, no. 1. Pp. 192−200.
- Tanaka, S. Self-assembling GaN quantum dots on AlxGai-xN surfaces using a surfactant / S. Tanaka, S. Iwai, Y. Aoyagi // Applied Physics Letters. — 1996. Vol. 69, no. 26. — Pp. 4096−4098.
- Process optimization for the effective reduction of threading dislocations in MOVPE grown GaN using in situ deposited SiNx masks / J. Hertkorn, F. Lipski, P. Bruckner et al. // Journal of Crystal Growth. — 2008. — Vol. 310, no. 23. Pp. 4867−4870.
- Nitrogen-polar GaN growth evolution on c-plane sapphire / Q. Sun, Y. Cho, I. Lee et al. // Applied Physics Letters. 2008. — Vol. 93. — P. 131 912.
- The impact of initial growth and substrate nitridation on thick GaN growth on sapphire by hydride vapor phase epitaxy / S. Gu, R. Zhang, Y. Shi et al. // Journal of crystal growth. — 2001.— Vol. 231, no. 3.- Pp. 342 351.
- Beaumont, B. Process for Growth of Low Dislocation Density Gan. — 2006. US Patent App. 20,090/278,136. ¦
- Understanding nonpolar GaN growth through kinetic Wulff plots / Q. Sun, C. Yerino, T. Ko et al. // Journal of Applied Physics. 2008, — Vol. 104, no. 9. — Pp. 93 523−93 523.
- Metalorganic vapor phase epitaxial growth of a high quality GaN film using an A1N buffer layer / H. Amano, N. Sawaki, I. Akasaki, Y. Toyoda // Applied Physics Letters. 1986. — Vol. 48, no. 5. — Pp. 353−355.
- Pakula, K. Two-and three-dimensional growth modes of nitride layers / K. Pakula, J. Baranowski, J. Borysiuk // Crystal Research and Technology. 2007. — Vol. 42, no. 12. — Pp. 1176−1184.
- High quality thin GaN templates grown by hydride vapor phase epitaxy on sapphire substrates / D. Martin, J. Napierala, M. Ilegems et al. // Applied Physics Letters. 2006. — Vol. 88. — P. 241 914.
- The effect of the Si/N treatment of a nitridated sapphire surface on the growth mode of GaN in low-pressure metalorganic vapor phase epitaxy / S. Haffouz, H. Lahreche, P. Vennegues et al. // Applied Physics Letters. — 1998. Vol. 73. — P. 1278.
- Growth of high-quality GaN by low-pressure metal-organic vapour phase epitaxy (LP-MOVPE) from 3D islands and lateral overgrowth / H. Lahreche, P. Vennegues, B. Beaumont, P. Gibart // Journal of Crystal Growth. 1999. — Vol. 205, no. 3. — Pp. 245−252.
- Improvement of the optical properties of metalorganic chemical vapor deposition grown GaN on sapphire by an in-situ SiN treatment / S. Haffouz, V. Kirilyuk, P. Hageman et al. // Applied Physics Letters. — 2001.— Vol. 79. P. 2390.
- Influence of silane flow on MOVPE grown GaN on sapphire substrate by an in situ SiN treatment / I. Halidou, Z. Benzarti, T. Boufaden et al. //
- Materials Science and Engineering: B. — 2004. — Vol. 110, no. 3. — Pp. 251— 255.
- Datta, R. Mechanisms of bending of threading dislocations in MOVPE-grown GaN on (0001) sapphire / R. Datta, C. Humphreys // physica status solidi ©. 2006. — Vol. 3, no. 6. — Pp. 1750−1753.
- Improvements in a-plane GaN crystal quality by a two-step growth process / J. Hollander, M. Kappers, C. McAleese, C. Humphreys // Applied Physics Letters. 2008. — Vol. 92, no. 10. — P. 101 104.
- The formation of GaN dots on AlGaN surfaces using Si in gas-source molecular beam epitaxy / X. Shen, S. Tanaka, S. Iwai, Y. Aoyagi // Applied Physics Letters. 1997. — Vol. 72. — P. 344.
- Johnston, C. Microstructural evolution of nonpolar (1120) GaN grown on (1102) sapphire using a 3D-2D method / C. Johnston, M. Kappers, C. Humphreys // Journal of Applied Physics. — 2009. — Vol. 105, no. 7. — Pp. 73 102−73 102.
- Morphological and microstructural evolution in the two-step growth of nonpolar a-plane GaN on r-plane sapphire / Q. Sun, B. Kong, C. Yerino et al. // Journal of Applied Physics. 2009. — Vol. 106, no. 12. — Pp. 123 519 123 519.
- Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition / S. Rosner, E. Carr, M. Ludowise et al. // Applied Physics Letters. — 1997. — Vol. 70. P. 420.
- Carrier recombination at single dislocations in GaN measured by cathodoluminescence in a transmission electron microscope / M. Albrecht, H. Strunk, J. Weyher et al. // Journal of applied physics. — 2002. Vol. 92. — P. 2000.
- A new method of reducing dislocation density in GaN layer grown on sapphire substrate by MOVPE / S. Sakai, T. Wang, Y. Morishima, Y. Naoi // Journal of crystal growth. — 2000. — Vol. 221, no. 1−4. — Pp. 334−337.
- Frayssinet, E. Process for producing an epitaxial layer of gallium nitride. — 2009. US Patent App. 12/467,986.
- Three-dimensionally nucleated growth of gallium nitride by low-pressure metalorganic vapour phase epitaxy / H. Schenk, P. Vennegues, O. Tottereau et al. // Journal of crystal growth. — 2003. — Vol. 258, no. 3−4. — Pp. 232 250.
- In-situ reflectivity observation of GaN layers grown directly on sapphire by HVPE using low-temperature nucleation layers / D. Martin, J. Napierala, H. Buhlmann, M. Ilegems // Physica Status Solidi ©. — 2005. — Vol. 2, no. 7. Pp. 2053−2057.
- Reshchikov, M. Luminescence properties of defects in GaN / M. Reshchikov, H. Morkoc // Journal of applied physics. 2005. — Vol. 97. — P. 61 301.
- Clos, R. Wafer curvature in the nonlinear deformation range / R. Clos, A. Dadgar, A. Krost // Physica Status Solidi (a).- 2004, — Vol. 201, no. 11.- Pp. R75-R78.
- Hutchinson, J. Mixed mode cracking in layered materials / J. Hutchinson, Z. Suo // Advances in applied mechanics.— 1992, — Vol. 29, no. 63.— P. 191.
- Hardness and fracture toughness of bulk single crystal gallium nitride / M. Drory, J. Ager, T. Suski et al. // Applied physics letters.— 1996.— Vol. 69, no. 26. Pp. 4044−4046.
- Robinson, V. Nucleation kinetics of gold deposited onto UHV cleaved surfaces of NaCl and KBr / V. Robinson, J. Robins // Thin Solid Films. — 1974. Vol. 20, no. 1. — Pp. 155−175.
- Dwikusuma, F. Nucleation and initial growth kinetics of GaN on sapphire substrate by hydride vapor phase epitaxy / F. Dwikusuma, J. Mayer, T. Kuech // Journal of crystal growth. 2003. — Vol. 258, no. 1. — Pp. 6574.
- Properties and preparation of high quality, free-standing GaN substrates and study of spontaneous separation mechanism / H. Ashraf, R. Kudrawiec, J. Weyher et al. // Journal of Crystal Growth. 2010. — Vol. 312, no. 1617. — Pp. 2398−2403.