Собственное оптическое поглощение и люминесценция твердых растворов полупроводников A3B5
Диссертация
Целью работы являлось развитие модельных представлений и разработка удобной для практического применения методики расчетов спектров фундаментального поглощения полупроводниковых твердых растворов с прямой структурой энергетических зон, создание программного обеспечения и проведение соответствующих расчетов для наиболее. Хегази, Х.Х., Пихтин А. Н., Тарасов С. А. Моделирование спектров… Читать ещё >
Список литературы
- Пихтин А. Н. Оптическая и квантовая электроника. М.: изд. Высшая школа, 2001. 573 с- 2-е изд-2009 г.
- Chelikowsky J. R. and Cohen M. L. Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors // Phys. Rev. B. 1976. Vol. 14, № 2. P. 556.
- Vurgaftman I., Meyer J. R., and Ram-Mohan L. Band parameters for III-V compound semiconductors and their alloys // J. Appl. Phys. 2001. Vol. 89, № 11. P. 5815−5875.
- Пихтин A. H, Яськов А. Д. Рефракция света в полупроводниках: Обзор // ФТП. 1988. Т. 22, Вып. 6. С. 969−992.
- Manasreh О. Semiconductor heterojunctions and nanostructures. McGraw-Hill Companies, Inc., 2005.P.228
- Li J., Nam K.B., Nakarmi M.L., Lin J.Y., Jiang H.X., Carrier P. and Wei S.H. Band-edge photoluminescence of A1N epilayers //Appl Phys. Lett., 2003, 81, P.3365.
- Chen G. D., Smith M., Lin J. Y., and Jiang H. X., Wei Su-Huai, Asif M. Khan and Sun C. J. Fundamental optical transitions in GaN// Appl. Phys. Lett. 1996. Vol. 68 № 20. P.2784−2786.
- Yeh C.-Y., Wie S.-H. and Zunger A. Relationships between the band gaps of the zinc-blende and wurtzite modifications of semiconductors//Phys. Rev. B, 1994,50, P.2715.
- Edgar J.H., Strite S., Akasaki L., Amano H. and Wetzel C., Eds. in Gallium Nitride and Related Semiconductors, INSPEC publication, London, 1999.
- Goldhahn R. Dielectric Function of Nitride semiconductors// Acta physica Polonica A 2003, 104, P. 123.
- Albrecht S., Reining L., Del Sole R., Onida G. Ab Initio Calculation of Excitonic Effects in the Optical Spectra of Semiconductors //Phys. Rev. Lett. 1998, 80, P4510.
- Rohlfing M., Louie S.G. Electron-Hole Excitations in Semiconductors and Insulators //Phys. Rev. Lett. 1998, 81, P2312.
- Benedict L.X., Shirley E.L., Bohn R.B. Theory of optical absorption in diamond, Si, Ge, and GaAs //Phys. Rev. B. 1998, 57, P. R9385.
- Benedict L.X., Shirley E.L. Ab initio calculation of s2(co) including the electron-hole interaction: Application to GaN and CaF2//Phys. Rev. B, 1999,59, P5441.
- Benedict L.X., Wethkamp Т., Wilmers K., Cobet C., Esser N., Shirley E.L., Richter W., Cardona M., Solid State Commun. 1999, 112, PI29.
- Lautenschlager P., Garriga M., Logothetidis S., Cardona M. Interband critical points of GaAs and their temperature dependence//Phys. Rev. В 1987, 35, P.9174.
- Kim C.C., Garland J.W., H. Abad, Raccah P.M. Modeling the optical dielectric function of semiconductors: Extension of the critical-point parabolic-band approximation //Phys. Rev. В 1992, 45, 11 749.
- Kim C.C., J.W. Garland, Abad H., Raccah P.M. Modeling the optical dielectric function of the alloy system AlxGai. xAs //Phys. Rev. В 1993, 47, 1876.
- Kim C.C., Sivananthan S. Optical properties of ZnSe and its modeling//Phys. Rev. B, 1996, 53, P. 1475.
- Erman M., Theeten J.B., Chambon P., Kelso S.M., Aspnes D.E. Optical properties and damage analysis of GaAs single crystals partly amorphized by ion implantation //J. Appl. Phys. 1984, 56, P.2664.
- Terry EL. Jr. A modified harmonic oscillator approximation scheme for the dielectric constants of A^Ga^As//. Appl. Phys. 1991, 70, P.409.
- Djurisic A.B., Rakic A.D., ICwok PC., Li E.H., Majewski M.L., Elazar J.M. Modeling the optical constants of AlxGaixAs alloys //J. Appl. Phys. 1999, 86, P.445.
- Adachi S., Physical Properties of Ш-V Semiconductor Compounds InP, InAs, GaAs, GaP, InGaAs, and InGaAsP, John Wiley & Sons, Inc., USA, 1992, 137.
- Adachi S. Model dielectric constants of GaP, GaAs, GaSb, InP, InAs, and InSb//Phys. Rev. B, 1987, 35, P.7454.
- Adachi S. Model dielectric constants of Si and Ge//Phys. Rev. В 1988, 38, P. 12 966.
- Adachi S. Optical dispersion relations for GaP, GaAs, GaSb, InP, InAs, InSb, AlxGaixAs, and InjxGaxAsyPi}//J. Appl. Phys. 1989, 66, P.6030.
- Adachi S. Optical properties of In).4GaxAsvPi.y alloys//Phys. Rev. B, 1989, 39, P.12 612.
- Ozaki S., Adachi S. Spectroscopic ellipsometry and thermoreflectance of GaAs//J. Appl. Phys. 1995, 78, P3380.
- Harbeke G., in Optical Properties of Solids, ed. Abeles F. (North-Holland, Amsterdam, 1972), p. 21.
- Ozaki S., Adachi S. Modelling the optical constants of GaAsexcitonic effects//.!. Appl. Phys. 1999, 78, P3180.
- Adachi S. Excitonic effects in the optical spectrum of GaAs//Phys. Rev. В 1990, 41, P.1003.
- Adachi S. Effects of the indirect transitions on optical dispersion relations//Phys. Rev. В 1990, 41, P.3504.
- Adachi S. Refractive indices of III—V compounds: Key properties of InGaAsP relevant to device design//J. Appl. Phys. 1982, 53, P.5863.
- Kawashima Т., Yoshikawa H., Adachi S., Fuke S., Ohtsuka K. Optical properties of hexagonal GaN//J. Appl. Phys. 1997, 82, P.3528.
- Jenkins D.W. Optical constants of AlxGa, xAs //J. Appl. Phys. 1990, 68, P. 1848.
- Zheng J., Lin C.-H., Kuo C.H. Optical properties of bulk AlGaAs//J. Appl. Phys. 82 (1997) P.792.
- Rakic A.D., Majewski M.L. Modeling the optical dielectric function of GaAs and AlAs: Extension of Adachi’s model//J. Appl. Phys. 80, 1996, P.5909.
- Djurisic А.В., Li E.H. Modeling the optical properties of hexagonal GaN//Appl. Phys. Lett. 73, 1998, P868.
- Djurisic А.В., Li Е.Ы. Modeling the optical constants of hexagonal GaN, InN, and A1N//J. Appl. Phys. 85, 1999, P.2848.
- Forouhi A. R. and Bloomer I., in Handbook of Optical Constants of Solids II, edited by Palik E. D. (Academic, San Diego, 1991), pp. 151−175.
- Forouhi A. R. and Bloomer I. Optical properties of crystalline semiconductors and dielectrics//Phys. Rev. В 38, 1988, P. 1865.
- Chen Y. F., Kwei С. M., and Tung C. J. Optical-constants model for semiconductors and insulators//Phys. Rev. В 48, 1993, P.4373.
- Kim C.C., Garland J.W., Abad H., Raccah P.M. Modeling the optical dielectric function of semiconductors: Extension of the critical-point parabolic-band approximation//Phys. Rev. В 45, 1992, P. l 1749.
- Kim C.C., Garland J.W., Abad H., Raccah P.M. Modeling the optical dielectric function of the alloy system AlxGaixAs//Phys. Rev. В 47, 1993 P.1876.
- Kim C.C., Sivananthan S. Modeling the optical dielectric function of II-VI compound CdTe //J. Appl. Phys. 78, 1995, P.4003.
- Kim C.C., Sivananthan S. Optical properties of ZnSe and its modelin//Phys. Rev. В 53, 1996, P1475.
- Elliott R. J. Intensity of Optical Absorption by Excitons//Phys. Rev. 108 (1957) 1384.
- Tanguy C., Optical Dispersion by Wannier Excitons//Phys. Rev. Lett. 751 995)4090.
- Tanguy C., Optical Dispersion by Wannier Excitons//Phys. Rev. Lett. 761 996)716.
- Tanguy C., IEEE J. Quantum Electron. 32,1996, P. 1746.
- Sermage В., Petiot S., Tanguy C., Le Si Dang, Andre R. Cdo.8sZno.12Te group index measurements near the exciton energy at low temperature//J. Appl. Phys. 83, 1998, P.7903.
- Holden Т., Ram P., Pollak F.H., Freeouf J. L., Yang B.X., Tamargo M.C. Spectral ellipsometry investigation of Zno.53Cdo.47Se lattice matched to InP//Phys. Rev. B, 56, 1997, P.4037.
- Wei К., Poll ale F.H., Freeouf J.L., Shvydka D., Compaan A.D. Optical properties of CdTeixSx (0 < x <1): Experiment and modeling //J. Appl. Phys. 85, 1999, P.7418.
- Pollalc F.H., Munoz M., Holden Т., Wei K., Asnin V.M., Phys. Stat. Sol. В 215, 1999, P.33.
- Goni A.R., Cantarero A., Syassen K., Cardona M. Effect of pressure on the low-temperature exciton absorption in GaAs//Phys. Rev. B. 41, 1990 P.10 111.
- Кале E.O., J. Phys. Chem. Solids, 1, 249 (957).
- Kane E. О., в книге Semiconductors and Semimetals, vol. 1 New York, 1967.
- Dresselhaus G. Spin-Orbit Coupling Effects in Zinc Blende Structures//Phys. Rev. 100. 1955, P. 580.
- J. Bardeen, F. J. Blatt, and L. H. Hall. Photoconductivity conference. (Wiley, N.Y., 6, 1954) p. 36.
- T. S. Moss. Optical properties of semiconductors. (Butterworths, London, 1959) p. 36.
- Earnest J. Johnson, Absorption near the Fundamental Edge, in semiconductors and semimetals. Vol.3, Ed. R. К. Willardson and Albert C. Beer. Academ press, 1967. P. 154
- Singh J. Electronic and optoelectronic properties of semiconductor structures, Cambridge University Press 2003. P.345.
- Chakraborty P. K., Singh L. J., Ghatalc K. P. Simple theory of the optical absorption coefficient in nonparabolic semiconductors/Л. Appl. Phys., 95, 2004, P.5311.
- Sell D. D. and Casey H. C. Optical absorption and photoluminescence studies of thin GaAs layers in GaAs-AlxGai4As double heterostructure//J. Appl. Phys., 45, 1974, P.800.
- Adachi S. S. Optical Constants of Crystalline and Amorphous Semiconductors: Numerical Data and Graphical Information. (Kluwer Academic, Boston, 1999).
- Ghezzi С., Magnanini R., Parisini A., Rotelli В., Tanicone L., Bosacchi A., and Franchi S. Optical absoiption near the fundamental absorption edge in GaSb//Phys. Rev. B, 52, 1995, P. 1463.
- Пихтин A. H. ФТП, 11, 1977, c.425
- Loudon R. The Quantum Theory of Light 2nd ed. (Oxford University Press, 1983), P39.
- Shokhovets S., Gobsch G., and Ambacher O. Excitonic contribution to the optical absorption in zinc-blende III-V semiconductors// Phys. Rev. В 74, 2006, 155 209.
- Moss T. S. Optical properties of semiconductors. (Butterworths, London, 1959) p 36.
- Casey H. C., Jr., Sell D. D., and Wecht K. W. Concentration dependence of the absorption coefficient for n-and p-type GaAs between 1.3 and 1.6 eV//J. Appl. Phys., 46, 1975, P.250.
- Ж. И. Алферов, E. Л. Портной, А. А. Рогачев. ФТП, 2, 1194(1968).
- В. Берндт, А. А. Копылов, А. Н. Пихтин. ФТП, 11,1977, с. 2206.
- А. А. Копылов, А. Н. Пихтин. ФТП, 15, 1981, с. 2164.
- Martin Munoz, Todd М. Holden, and Fred H. Pollak, Mathias Kahn and Dan Ritter, Leeor Kronilc, Guy M. Cohen, Optical constants of Ino.53Gao.47As/InP: Experiment and modeling// J. Appl. Phys., 92, 2002, P. 5878.
- Madelung O. Semiconductors: Data Handbook. 3rd ed. (Springer 2004), P.502.
- Adachi S. GaAs, AlAs, and AlxGaixAs Material parameters for use in research and device applications //J. Appl. Phys., 58, 1985, P. R1
- Aspnes D. E., Kelso S. M., Logan R. A., Bhat R. Optical properties of AlxGa, x As//J. Appl. Phys., 60, 1986, P.754.
- T. Kaneto, K. W. Kim, and M. A. Littlejohn. A comparison of minority electron transport in Ino.53Gao.47As and GaAs//Appl. Phys. Lett. 63, 1993, P.48
- Singh J. in Semiconductor Devices: An Introduction (McGraw-Hill, NewYork) (1994).
- Depee D. G., Gerrard N. D., Pinzone C. J., Dupuis R. D., and E. F. Schubert. Quarter-wave Bragg reflector stack of InP-Ino.53Gao.47As for 1.65 j. im wavelength //Appl. Phys. Lett. 56, 1990. 315.
- Burkhard H., Dinges H. W., and Kuphal E. Optical properties of Ini" xGaxPiyAs3, InP, GaAs, and GaP determined by ellipsometry//J. Appl. Phys. 53, 1982, P.655.
- Kelso S. M., Aspnes D. E., Pollack M. A. and Nahory R. E. Optical properties of InixGaxAsvPi-v from 1.5 to 6.0 eV determined by spectroscopic ellipsometry // Phys. Rev. B. 1982. Vol. 26, № 12. P. 66 696 681.
- Bacher F. R., Blakemore J. S., Ebner J. T. and Arthur J. R. Optical-absorption coefficient of In, xGaxAs/InP//Phys. Rev. В., 37, 1988, P. 2551.
- Handbook of Optical Constants of Solids I and II, edited by E. D. Palik. (Academic press, San Diego, 1998).
- D. E. Husk, C. Tarrio, E. L. Benitz, and S. E. Schnatterly. Response of photodiodes in the vacuum ultraviolet//J. Appl. Phys.70, 3338 (1991).
- Thompson A.G., Cardona M., Shaklee K.L. Electroreflectance in The GaAs-GaP alloys// Phys. Rev. 146, 601 (1966).
- R. J. Nelson, H. Holonyak, and W. O. Groves. Free-exciton transitions in the optical absorption spectra of GaAsixPx //Phys. Rev. В 13, 5415(1976).
- M. Gerling, G. Paulsson, M.-E. Pistol, and L. Samuelson. Optical properties of thin, strained layers of GaAsxP. x grown on (11 l)-oriented GaP//Phys. Rev. B47, 6408 (1993).
- С. Wetzel, В. К. Meyer, and P. Omling. Electron effective mass in direct-band-gap GaAs,.xPx alloys//Phys. Rev. В 47, 1993, P. 15 588.
- M.-E. Pistol and X. Liu Quantum-well structures of direct-band-gap GaAsl-xPx/GaAs studied by photoluminescence and Raman spectroscopy//Phys. Rev. В 45, 1992, P.4312.
- S. Hasegawa, A. Tanaka and T. Sukegawa. Optical-absorption coefficient near the fundamental absorption edge of GaAs^JP* //J. Appl. Phys. 55, 1984, P.3188.
- Kim K. J., Lee M. H., Baling J. Ho, Shim K., and Choe B. D. Optical constants and electronic interband transitions of disordered GaAsixPx alloys //J. Appl. Phys. 84, 1998, P.3696.
- Pikhtin A. N., Lazarenkova O. L. Gallium phosphide and its wide-band gap ternary and quaternary alloys, in Handbook of Electroluminescent Materials, ed. by D. R. Vij (Institute of Physics Publishing, Bristol, 2004) p. 282.
- Adachi S., Physical properties of III-V semiconductors compounds, John Wiley & Sons, Inc., (1992).
- Nahory R.E., Pollack M. A. and Johnston Jr. Band gap versus composition of Vegard’s lawfor InixGaxasyPi-y lattice matched to InP// Appl. Phys. Lett. 33, 1978, P.659.
- H.-P. Gauggel, J. Kuhn, C. Jerichow, C. Geng, F. Scholz, and H. Schweizer, Electron. Lett. 33, 1997, P. 1385.
- Adachi S., Kato H. Refractive index of (AlxGaix)0.5ln0.5P quaternary alloys //J. Appl. Phys. 1994. Vol. 75, № 1. P. 478.
- Ozaki S., Adachi S., Sato M. and Ohtsuka K. Ellipsometric and thermoreflectance spectra of (AlxGaix)0.5ln0.5P alloys//J. Appl. Phys., 79, 1996, P.439.
- Yan C.H., Yao FI.W., Van Hove J.M., Wowchak A.M., Chow P. P., Han J., Zavada J.M. Nondestructive characterization of GaN films grown at low and high temperatures. Mat. Res. Soc. Symp. Proc. Vol. 591, 2000, P.313.
- Sadao Adachi, Handbook on Physical Properties of Semiconductors, Volume 2: III-V Compound Semiconductors, ISBN 1 4020 7819 6, Copyright (2004) by Kluwer Academic Publishers. P. 105.
- R. Goldhahn, A. T. Winzer, V. Cimalla, O. Ambacher, C. Cobet, W. Richter, N. Esser, J. Furthmi’iller, F. Bechstedt, H. Lu, W.J. Schaff. Anisotropy of the dielectric function for wurtzite InN// Superlattices and Microstructures 36, 2004, P.591.
- R. Goldhahna, P. Schley, A.T. Winzer, M. Rakel, C. Cobet, N. Esser, H. Lu, and W.J. Schaff. Critical points of the band structure and valence band ordering at the Г point of wurtzite InN // Journal of Crystal Growth 2006. Vol. 288. P 273.
- Li J., Nam IC.B., Nakarmi M.L., Lin J.Y., Jiang H.X., Carrier P. and Wei S.H. Band structure and fundamental optical transitions in wurtzite A1N//Appl Phys. Lett., 2003, 83, P.5163.
- Yim W.M., Stofko E.J., Zanzucchi, Pankove J. I, Ettenberg M. and Gilbert. Epitaxially grown A1N and its optical band gap// J. Appl. Phys., 44, 1973, P. 292.
- Piprek J. Nitride Semiconductor Devices Principles and Simulation. WILEY-VCH Verlag GmbH & Co. KGaA, 2007.
- Shun Lien Chuang, Physics of Optoelectronic Devices, John Wiley & Sons. Inc. (1995).
- Elliot R. J. Intensity of optical absorption by excitons//Phys. Rev., 108, 1957, P1384.
- Carrier P. and Wei S. H. Theoretical study of the band-gap anomaly of InN //J. Appl. Phys. 97, 2005. P.33 707
- Shokhovets S., Ambacher O., Meyer В. K. and Gobsch G., Anisotropy of the momentum matrix element, dichroism, and conduction-band dispersion relation of wurtzite semiconductors // Phys. Rev. B, 2008, 78. P. 352 071.
- Shokhovetsa S., Gobsch G. and Ambacher O. // Appl. Phys. Lett 86, 2005, P.161 908
- Davydov, V.Yu., Emtsev V.V., Goncharuk A.N., Smirnov A.N., Petrikov V.D., Mamutin V.V., Velcshin V.A., Ivanov S.V., Smirnov M.B. and Inushima Т., Experimental and theoretical studies of phonons in hexagonal InN//Appi. Phys. Lett. 75, 1999, P.3297.
- Kasap S., Capper P., in Springer Handbook of Electronic and photonic materials. Springer Science 2006. p.735
- Tansley, T.L. in Properties of Groupe III Nitrides, ed. Edgar J.H., INSPEC, London 1994, p.39.
- Manchon, D.D., Barker, A.S., Dean, J.P., Zetterstrom, R.B., Solid State Commun. 8, 1970, P. 1227.
- Ejder, E. Refractive index of GaN //Phys. Status Solidi (a) 6, 1971, P.445.
- Meng, W.J., in Properties of Group III Nitrides. Ed. Edgar J.H., EMIS Datareviews Series, N11(1994) an INSPEC publication, 22−29.
- Nam K.B., Li J., Nakarmi M.L., Lin J.Y. and Jiang H.X. Unique optical properties of AlGaN alloys and related UV emitters// Appl. Phys. Lett., Vol. 84. № 25, 2004, P.5264.
- Yun F., Reshchikov M. A., He L., King Т., and Morko9 H., Novak S. W. and Wei L. Energy band bowing parameter in AlxGaixN alloys// J. Appl. Phys., 2002, 92, P. 4837.
- Stutzmann M., Ambacher O., Cros A., Brandt M.S., Angerer H., Dimitrov R., Reinacher N., Metzger Т., Hopler R., Brunner D., Freudenberg F., Handschuh R., Ch. Deger//Mat. Sci. Eng. B50, 1997, P.212.
- LLiopoulos E., Adikimenakis A., Giesen C., Heuken M., and Georgakilas A. Energy bandgap bowing of InAIN alloys studied by spectroscopic ellipsometry//Appl. Phys. Lett., Vol. 92. 2008, P. 191 907.
- Goldhahn R., Schley P., Winzer А. Т., Gobsch G., Cimalla V., Ambacher O., Rakel M., Cobet C., Esser N., Lu H., and Schaff W. J. // phys. Stat. Sol. a) 203, No. 1,2006, P.42.
- Wu J., Walukiewicz W., Yu К. M., Ager J. W., Haller E. E., Lu H., and Schaff W. J., Phys. Stat. Sol. В 240, 2003, P.412.
- Vurgaftman I. and Meyer J. R. Band parameters for nitrogen-containing semi-conductors //J. Appl. Phys., 2003 Vol. 94, №. 6. P. 3675−3696.
- Muth J.F., Brown J.D., Johnson M.A.L., Yu Zhonghai, IColbas R.M., Cook J.W., Jr., and Schetzina J.F. Absorption coefficient and refractive index of GaN, A1N and AlGaN alloys // MRS Internet J. Nitride Semicond. Res. 1999. Vol. 4S1.P.G5.2.
- Schley P., Goldhahn R., Winzer А. Т., Gobsch G., Cimalla V., Ambacher O., Rakel M., Cobet C., Esser N., H. Lu, and Schaff W. J. // phys. Stat. Sol. b) 243, No. 7, 2006, P. 1572.
- Wagner J., Ramakrishnan A., Obloh H., Kunzer M., Kohler K., and Johs B. // MRS Internet J. Nitride Semicond. Res. Vol. 5S1, 2000, p. U667-U672.
- Matsuoka T. Calculation of unstable mixing region in wurtzite Inix yGaxAlyN//Appl. Phys. Lett. 71, 1997, P. 105.
- L. H. Robins, J. T. Armstrong, R. B. Marinenko, A. J. Paul, and J. G. Pellegrino. High-accuracy determination of the dependence of the photoluminescence emission energy on alloy composition in AlxGa (xAs film//J. Appl. Phys., 93, 2003, P.3747.
- Xiang-Bai Chen, Jesse Huso, John L. Morrison, and Leah Bergman. Dynamics of GaN band edge photoluminescence at near-room-temperature regime// J. Appl. Phys., 99, 2006, P.46 105.
- Buchheim C., Goldhahn R., Rake M., Cobet C., Esser N., Rossow U., Fuhrmann D., and Hangleiter A. Dielectric function and critical points of the band structure for AlGaN alloys// phys. stat. sol. (b) 242, No. 13, 2005, 2610
- Nepal N., J. Li, Nakarmi M. L., Lin J. Y., and Jianga H. X. Temperature and compositional dependence of the energy band gap of AlGaN alloys// Appl. Phys. Lett. 87 (2005), P.242 104.
- Shigeo Y., Michihiko K., Shugo N., Tetsuya Т., Christian W., Hiroshi A. and Isamu A. Anomalous features in the optical properties of Al. xInxN on GaN grown by metal organic vapor phase epitaxy//Appl. Phys. Lett. 76 (2000) 876.
- Wu J., Walukiewicz W., Yu K. ML, Ager J. W., Haller E. E., H. Lu, and Schaff W. J. Small band gap bowing in Ini. xGaxN alloys//Appl. Phys. Lett. 76, 2000, P.876.
- Korzhavina, N.S.- Shamirzaev, T.S.- Mansurov, V.G.- Zhuravlev, K.S.// Electron Devices and Materials, 2006. Proceedings. 7th Annual 2006 International Workshop and Tutorials on Volume, Issue, 1−5 July 2006 P.69
- Maurice C. Cheung, Gon Namkoong, Fei Chen, Madalina Furis, Haridas E. Pudavar, Alexander N. Cartwright, and W. Alan Doolittle. Photoluminescence study of MBE grown InGaN// phys. stat. sol. © 2, No. 7, 2005, P.2779.
- Cho, Yong-Hoon- Gainer, G.H.- Song, Jin-Joo- Keller, SarahL.- Mishra, Umesh K.- Denbaars, StevenP.- Yang, Wei- McPherson, ScottA.//Proc. SPIE Vol. 3624, p. 283−290.
- G. Steude and Meyer В. K., Goldner A. and Hoffmann A., Bertram F. and Christen J., Amano H. and Akasaki I. Optical investigations of AlGaN on GaN epitaxial films// Appl. Phys. Lett. 74, 1999, P.2456.
- Fujimoria Т., H. Imaia, A. Wakaharaa, H. Okadaa, A. Yoshidaa, T. Shibatab and M. Tanaka. Growth and characterization of AlInN on A1N template// Journal of Crystal Growth 2004. Vol. 272. P 381.
- Wang K., Martin R. W., Amabile D., Edwards P. R., Hernandez S., Nogales E., Donnell K. P., Lorenz K., Alves E., Matias V., Vantomme A., Wolverson D., and Watson I. M. Optical energies of AlInN epilayers//J. Appl. Phys. 103, 2008, 73 510.
- Sheng Y. Т., Wu J., and Lan W. Electrical properties and optical bandgaps of AlInN films by reactive sputtering// Journal of Crystal Growth, 2008. 310. P.5308.