Структурные, оптические и электронные свойства многокомпонентных халькогенидов металлов групп I и III для тонкопленочных фотопреобразователей солнечной энергии
Диссертация
Выращены монокристаллы халькопиритных соединений CuInSe2 с рекордно узкими линиями свободных и связанных экситонов в спектрах люминесценции и отражения при 4.2 К, определены наиболее точные значения величины кристаллического поля Акп =5.3 мэВ и спин-орбитального взаимодействия ASo = 234.7 мэВ, установлена зависимость изменения Акп и ширины запрещенной зоны Eg от элементного состава монокристаллов… Читать ещё >
Список литературы
- Bagnall, D.M. Photovoltaic technologies / D. M. Bagnall, M. Boreland // Energy Policy. 2008.- V. 36. — P.4390−4396.
- Repins, I. 19.9%-efficient ZnO/CdS/CuInGaSe2 solar cell with 81.2% fill factor //1. Repins, Contreras M.A., et al. // Progress in Photovoltaics. 2008.- V. 16. № 3. — P. 235−239.
- Shockley, W. Detailed balance limit of efficiency of p-n junction solar cells / W. Shockley, H.J. Queisser//J. Appl. Phys. -1961,-V. 32. P. 510 — 519.
- Wei, S. Chemical trends of defect formation and doping limit in II-VI semiconductors: The case of CdTe / S. Wei, S.B. Zhang // Phys. Rev. B. 2002.- Y.66, № 3, — P. 155 211−1 552 110.
- Watkins, G.D. Intrinsic defects in II-VI semiconductors / G.D.Watkins // Journal of Crystal Growth. -1996, — V.159. № 1 4. — P. 338 — 344.
- Zhang, S.B. Defect physics of the CuInSe2 chalcopyrite semiconductor / S.B. Zhang, S.H. Wei, A. Zunger, H. Katayama-Yoshida/ Phys. Rev. B. 1998.- V.57. № 16. — P. 9642 — 9656.
- Shay, J. L., Ternary Chalcopyrite Semiconductors Growth, Electronic Properties, and Applications / J.L. Shay, J.H. Wernick. New York: Pergamon Press, 1975. — 475 p.
- Ullal, H.S. Current Status of Polycrystalline Thin-Film PV Technologies / H.S. Ullal // Proceedings of the 26th IEEE Photovolt Spec Conf- Anaheim, CA, USA, 29 September 3 October 1997./ - New York, USA, 1997. — P. 301 — 305.
- Weinert, K. Consequence of 3-MeV electron irradiation on the photovoltaic output parameters of Cu (In, Ga) Se2 solar cells / K. Weinert, A. Jasenek, U. Rau // Thin Solid Films. 2003. — V. 431 — 432. -P. 453 -456.
- Rockett, A. CuInSe2 for Solar Cell Application / A. Rockett, R. Birkmire / J. Appl. Phys. // -1991.-V.70. P. R81 — R97.
- Meeder, A. Temperature dependence of the exciton gap in monocrystalline CuGaSe2 / A. Meeder, A. Jager-Waldau, V. Tezlevan et al. // Journal of Physics Condensed Matter // - 2003.- V.15. — P. 6219- 6227.
- Hwang, H.L. CuInS2 Material Growth, Defect Structure and Physical Properties / H.L. Hwang // Cryst. Res. Technol. -1996. — V.31. — P. 405 — 418.
- Yakushev, M.V. Optical properties and band gap energy of CuInSe2 thin films prepared by two-stage selenization process / M.V. Yakushev, A.V. Mudryi, V.F. Gremenok et al. // J. Phys. Chem. Solids.- 2003.- V.64. P. 2003 — 2009.
- Horig, W. The Optical Properties of CuInSe2 Thin Films / W. Horig, H. Neumann, H. Subotta et al. // Thin Solid Films. 1978. — V.48. — P. 67 — 72.
- Wagner, S. The p-CuInSe2/n-CdS Heterodiode: Photovoltaic Detector, Solar cell and Light Emitting Diod / S. Wagner, J.L. Shay, H.M. Kasper // Journal de Physique C3 Supl. -1975. V. 36, № 9. -P.101 — 104.
- Lany, S. Intrinsic DX centers in ternary chalcopyrite semiconductors / S. Lany, A. Zunger // Phys. Rev. Lett. 2008, — V. 100. № 1. — P. 16 401 — 16 404.
- Yan, Y. Grain-boundary physics in polycrystalline CuInSe2 revisited: Experiment and theory / Y. Yan, R. Noufi, M.M. Al-Jassim // Phys. Rev. Lett. 2006. — V. 96, № 20. — P. 1−3.
- Jaffe, J.E. Theory of the Band-Gap Anomaly in ABC2 Chalcopyrite Semiconductors / J.E. Jaffe, A. Zunger // Phys. Rev. B. 1984, — V. 29. № 4. — P. 1882 — 1906.
- Deus, P. Low-temperature thermal expansion in CuInSe2 / P. Deus, H. Neumann, G. Ktihn, B. Hinze // Phys. Stat. Sol. (a). 1983, — V. 80. — P.205 — 209.
- Parkes, J. Crystal Data for CuInSe2 / J. Parkes, R.D. Tomlinson, M.J. Hampshir // Journal of Applied
- Crystallography. 1973, — V.6, № 1. — P. 414 — 416.
- Mandel, L. Crystal Data for CuGaSe2 / L. Mandel, R.D. Tomlinson, M.J. Hampshire // Journal of Applied Crystallography. 1977.- V.10. — P. 130 -131.
- Abrahams, S.C. Piezoelectric Nonlinear Optic CuGaS2 and CuInS2 Crystal Structure: Sublattice Distortion in AIBIIIC2VI and A"BivC2v Chalcopyrites / S.C. Abrahams, J.L. Bernstein // J. Chem. Phys. 1973, — V.59. — P. 5415 — 5422.
- Neumann, H. Relation Between Electrical Properties and Composition in CuInSe2 Single Crystals / H. Neumann, R.D. Tomlinson // Solar Cells. 1990, — V.28. — P. 301 — 313.
- Belova, E.K. Triple chalcogenides of gallium of the type A super I-III-2VI (Phase diagrams and structure of triple chalcogenides of gallium, discussing stability) / E.K. Belova, L.S. Palatnik // Inorganic Materials. 1967.- V.3. — P. 865 — 870.
- Maeda, T. Characteristics of chemical bond and vacancy formation in chalcopyrite-type CuInSe2 and related compounds / T. Maeda, T. Wada//Physica Status Solidi ©. 2009. — V. 5. — P. 1312 — 1316.
- Tomlinson, R.D. Fabrication of CuInSe2 Single Crystals Using Melt-Growth Technique / R.D. Tomlinson // Solar Cells. 1986, — V. 16. — P. 17 — 26.
- Stanbery, B.J. Epitaxial growth and characterization of CuInSe2 crystallographic polytypes / B. J. Stanbery, S. Kincal, S. Kim et al. // Journal of Applied Physics. 2002. — V. 91. № 6. — P. 3598 -3604.
- Alvarez-Garcia, J.A. Polymorphism in CuInS2 epilayers: Origin of additional Raman modes / J.A. Alvarez-Garcia, A. Pe'rez-Rodriguez, B. Barcones et al. // Appl. Phys. Lett. -2002.- V.80. № 4. P. 562 — 564.
- Wei, S.H. Band structure and stability of zinc-blende-based semiconductor polytypes / S.H. Wei, S.B. Zhang, A. Zunger // Phys. Rev. B. 1999.- V. 59. № 4. — P. R2478 — R2481.
- Rowe, J.E. Extension of the Quasicubic Model to Ternary Chalcopyrite Crystals / J.E. Rowe, J.L. Shay // Phys. Rev. B. -1971, — V.3. P. 451- 453.
- Neumann, H. Optical Properties and Electronic Structure of CuInSe2 / H. Neumann // Solar Cells. -1986.- V.16.-P. 317 333.
- Shirakata, S. Photoreflectance of CuInS2 single crystal prepared by travelling heater method / S. Shirakata, H. Miyake // J. Phys. Chem. Solids. -2003, — V.64. P. 2021 — 2024.
- Binsma, J. J. M. Luminescence of CuInS2 / J. J. M. Binsma, L. J. Gilliny, J. Bloem // J. Lumin. -1982. V.27. — P. 55−71.
- Eberhardt, J. Excitonic luminescence of polycrystalline CuInS2 solar cell material under the influence of strain / J. Eberhardt, H. Metzner, K. Schulz et al. // J. Appl. Phys. 2007, — V.102. — P. 335 031 -335 039.
- Медведкин, Г. А. Полупроводниковые кристаллы фотоприемников линейно -поляризованного излучения / Г. А. Медведкин, Ю. В. Рудь, М. А. Таиров. Ташкент: Фан, — 1992. — 296 с.
- Tell, В. Aspects of the Band Structure of CuGaS2 and CuGaSe2 / B. Tell, P.M. Bridenbaugh // Phys. Rev. B. 1975, — V. 12. — P. 3330 — 3335.
- Yu, P.W. Radiative Recombination in Melt-Grown and Cd-implanted CuInSe2 / P.W.Yu // J. Appl. Phys. 1976, — V. 47. — P. 677 — 684.
- Chatraphorn, S. Photoluminescence of a high quality CuInSe2 single crystal / S. Chatraphorn, K. Yoodee, P. Songpongs et al. // Jpn. J. Appl. Phys. 1998.- V.37. — P. L269 — L271.
- Quintero, M. Temperature-Variation of Energy Gaps and Deformation Potentials in CuGa (SzSei-z)2 Semiconductor Alloys / M. Quintero, C. Rincon, P. Grima // J. Appl. Phys. 1989. — V. 65, № 7. — P. 2739−2743.
- Mandel, L. Electrocal properties of CuGaSe2 single crystals / L. Mandel, R.D.Tomlinson, M.J. Hampshire, H. Neumann // Solid State Communications. 1979.- V. 32, № 3. — P. 201 — 204.
- Look, D.C. Electron and Hole Conductivity in CuInS2 / D. C. Look, T. C. Manthuruthil // J. Phys. Chem. Sol. 1976, — V.37. — P. 173 — 180.
- Wasim, S.M. Density of states effective mass of n-type CuInSe2 from the temperature dependence of Hall coefficient in the activation regime / S.M.Wasim, L. Essaleh, C. Ricon et al. // J. Phys. Chem. Sol. 2005, — V. 66. — P. 1887 — 1890.
- Neumann, H. Hole Effective Masses in CuInSe2 / H. Neumann, H. Subotta, W. Kissinger et al. // Phys. Stat. Sol. B. 1981, — V. 108. — P. 483 — 487.
- Syrbu, N.N. Lattice vibrations in CuIni. xGaxSe2 crystals / N.N.Syrbu, M. Bogdanash, V.E. Tezlevan et al. // Physica B. 1997, — V. 229. № 2. — P. 199 — 212.
- Li P.W. Dielectric constant of CuInSe2 by capacitance measurements / P.W. Li, A.R.Anderson, R.H. Plovnick // J. Phys. Chem. Sol. -1979. V.40. — P. 333 — 334.
- Chichibu, S. Band gap energies of bulk, thin-film, and epitaxial layers of CuInSe2 and CuGaSe2 / S. Chichibu, T. Mizutani, K. Murakami et al. // J. Appl. Phys. 1998. — V.83. — P. 3678 — 3689.
- Hsu, T.M. Anomalous Temperature-Dependent Band-Gaps in CuInS2 Studied by Surface-Barrier Electroreflectance / T.M.Hsu, J.H.Lin // Phys. Rev. B. 1988.- V. 37. № 8. — P. 4106 -4110.
- Bell, A. Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick AlxGai. xN layers / A. Bell, S. Srinivasan, C. Plumlee et al. // Appl. Phys. 2004, — V.95. № 9. — P. 4670 — 4674.
- Arushanov, E. Shubnikov-De Haas Oscillations in N-Cuinse2 / E. Arushanov, Essaleh L., Galibert J., Leotin J., Arsene M.A., Peyrade J.P., Askenazy S. Applied Physics Letters. 1992.- V. 61. № 8. -P.958 — 960.
- Weinert, H. Infrared Faraday Effect in n-type CuInSe2 / H. Weinert, H. Neumann, H.J.Hobler et al. // Phys. Stat. Sol. (b). 1977, — V.81. — P. K59 — K61.
- Irie, T. Electrical Properties of n- and p-type CuInSe2 Single Crystals / T. Irie, S. Endo, S. Kimura // Jpn. J. Appl. Phys. -1979, — V. 18. P. 1303 — 1310.
- Kildal, H. Band structure of CdGeAs2 near k=0 / H. Kildal // Phys. Rev. B. 1974, — V.10. — P. 5082 -5087.
- Mansour, B.A. Transport properties of CuGaSe2 thin films / B.A.Mansour, M.A.El-Hagary // Thin sj Solid Films. 1995.- V.256. — P.165−170. ' }
- Amara, A. Electrical properties of CuGaSe2 single crystals and polycrystalline coevaporated thin } films / A. Amara, W. Rezaiki, A. Ferdi et al. // Phys. Stat. Sol. (a). -2007, — V.204, № 4. P.1138−1146.
- Taguchi, S. Magneto-Optical Effects of the Wanie Excitons in a Biaxial ZnP2 Crystal, I / S. Taguchi, T. Gota, M. Takeda, G. Kido // J. Phys. Soc. Jpn. -1988.- V.57. P.3256−3261.
- Lawaetz, P. Valence-Band Parameters in Cubic Semiconductors / P. Lawaetz // Phys. Rev. B. 1972.-V 4, № 10. — P. 3460−3445.
- Gilliland, G.D. Photoluminescence spectroscopy of crystalline semiconductors / G.D.Gilliland // Mat. Sci. Eng. 1997, — V. R18. — P.99−400.
- Niki, S. Excitonic Emissions from CuInSe2 on Gaas (001) Grown by Molecular-Beam Epitaxy / S. Niki, H. Shibata, P.J.Fons, A. Yamada et al. // Appl. Phys. Lett. 1995, — V.67, № 9. — P.1289−1291.
- Mudryi, A.V. Free and bound exciton emission in CuInSe2 and CuGaSe2 single crystals / A.V.Mudryi, I.V.Bodnar, V.F.Gremenok et al. // Solar Energy Materials and Solar Cells. 1998.-V.53, № 3−4. — P.247−253.
- Chatraphorn, S. Photoreflectance of a High Quality CuInSe2 Single Crystal / S. Chatraphorn, K. Yoodee, P. Songpongs, C. Chityuttakan // Jpn. J. Appl. Phys. -2000, — V.39, № 102, Suppl. 39−1. -P.102−106.
- Schon, J.H. Excitonic luminescence in CuInSe2 / J.H.Schon, E. Bucher // Appl. Phys. Lett. 1998.-V.73, № 2. — P.211−213.
- Tell, B. Electrical Properties, Optical Properties and Band Structure of CuGaS2 and CuInS2 / B. Tell, J.L.Shay, H.M. Kasper // Phys. Rev. B. 1971, — V.4, № 8. — P.2463−2471.
- Yoshino, K. Sharp band edge photoluminescence of high-purity CuInS2 single crystals / K. Yoshino,
- T.Ikari, S. Shirakata et al. // Appl. Phys. Lett. 2001.- V.78, № 6. — P. 742−744.
- Stepnewski R. Polariton Effects in Reflectance and Emission Spectra of Homoepitaxial GaN / R. Stepnewski, K.P.Korona, A. Wysmolek et al. // Phys. Rev. B. 1997.- V.56. — P. l5151−15 156.
- Weber, E.R. Understanding Defects in Semiconductors as Key to Advancing Device Technology / E.R.Weber // Physica (b). 2003.- V.340. — P. 1−14.
- Wei, S.H. Chemical ternds of defect formation and doping limit in II-VI semiconductors: the case of CdTe / S.H.Wei, S.B.Zhang // Phys. Rev. B. 2002, — V.66. — P. 155 211.
- Kohn, W. Hyperfine Splitting of Donor States in Silicon / W. Kohn, J.M.Luttinger // Phys. Rev. -1955.-V.97,№ 4. P. 883 -888.
- Шкловский, В.И. Примесная зона и проводимость компенсированных полупроводников / В. И. Шкловский, А. Л. Эфрос // ЖЭТФ. 1971, Т.60, С. 867 — 878.
- Abou-Elfotouh, F.A. Characterization of the Defect Levels in Copper Indium Diselenide / F.A.Abou-Elfotouh, H. Moutinho, A. Bakry et al. // Solar Cells. -1991.- V.30, № 1 4. — P. 151 — 160.
- Neumann, H. Influence of Intrinsic Defects on the Properties of AIBIUCvt2 Compounds / H. Neumann // Cryst. Res. & Technol. 1983, — V.18, № 4. — P.483−490.
- Neumann, H. Vacancy formation enthalpies in AIBIIIC2VI chalcopyrite semiconductors / H. Neumann // Cryst. Res. Techn. -1983, — V.18. P.901−906.
- Van Vechten J.A. Handbook of Semiconductors / J.A.Van Vechten, -Amsterdam: North Holland, 1980.-628 p.
- Jaffe, J.E. Anion displacement and the band-gap anomality in ternary ABC2 chalcopyrite semiconductors / J.E.Jaffe, A. Zunger // Phys. Rev. B. 1983.- V.27, № 8. — P.5176−5179.
- Schmid, D. Chalcopyrite/defect chalcopyrite heterijunctions on the basis of CuInSe2 / D. Schmid, M. Ruckh, F. Grunwald, H.W.Schock // J. Appl. Phys. Phys. 1992, — V.73, № 6. — P. 2902−2909.
- Chernyak, L. Electronic Effects of Ion Mobility in Semiconductors: Semionic Behaviour of CuInSe2 / L. Chernyak, K. Gartsman, D. Cahen et al. // J. Phys. Chem. Sol. 1995.- V.56. — P. l 165−1169.
- Gartsman, K. Direct evidence for diffusion and electromigration of Cu in CuInSe2 / K. Gartsman, L. Chernyak, V. Lyahovitskaya et al. // J. Appl. Phys. 1997, — V.82. № 9. — P. 4282−4285.
- Abou-Elfotouh, F.A. Determination and observation of electronic defect levels in CuInSe2 crystals and thin films / F.A.Abou-Elfotouh, L.L.Kazmerski, H.R.Moutinho // J. Vac. Sc.Technol. A. 1991. -V.9. № 3. — P.554−558.
- Kazmerski, L. Atomic-level imaging, processing and characterization of defects and surfaces using proximal probe techniques / L. Kazmerski // Vacuum. 1992.- V.43, № 11.- P.1011−1017.
- Jaffe, J.E. Electronic Structure of the Ternary Chalcopyrite Semiconductors CuAlS2, CuGaS2, CuInS2, CuAlSe2, CuGaSe2 and CuInSe2 / J.E.Jaffe, A. Zunger // Phys. Rev. B. 1983.- V.28. № 10. — P.5822−5847.
- Scheer, R. Photoemission Study of Evaporated CuInS2 Thin Films. I. Surface Stoichiometry and Phase Segregation / R. Scheer, H.J.Lewerenz // J. Vac. Sei. Technol. A. 1994, — V.12. — P. 51−55.
- Neumann, H. Ionicity of Chemical Bond in A’BmCVI2 Semiconductors / H. Neumann // Cryst. Res. Technol, -1983.- V.18, № 10. P. 1299−1312.
- Phillips, C. Ionicity of the Chemical Bond in Crystals / C. Phillips // Rev. Mod. Phys. 1970.- V.42.1. V.317−356.
- Persson, С. n-type Doping of CuInSe2 and CuGaSe2 / C. Persson, Y.J.Zhao, S. Lany, A. Zunger // Phys. Rew. B. 2005, — M.12. — P.35 211−35 226.
- Yamomoto, T. The Electronic structure of Non-stoichiometric CuInS2 and the Study of Defects Levels of CuInS2 with Chalcopyrite Structure / T. Yamomoto, H. Katayama-Yoshida // Cryst. Res. Technol. -1996, — V.31. P.97−100.
- Hwang, H.L. CuInS2 Material Growth, Defect Structures and Physical Properties / H.L.Hwang Cryst. Res. Technol. — 1996, — V.31. — P.405−418.
- Siebentritt, S. Reconciliation of luminescence and Hall measurements on the ternary semiconductor CuGaSe2 / S. Siebentritt, I. Beckers, T. Riemann et al. // Appl. Phys. Lett. 2005, — V.86, № 9. — P. 91 909−91 911.
- Schon, J.H. Characterization of intrinsic defect levels in CuInS2 / J.H.Schon, E. Bucher // Physica Status Solidi (a) -Applied Research. 1999.- V.171, № 2. — P.511−519.
- Schon, J.H. Comparison of point defects in CuInSe2 and CuGaSe2 single crystals / J.H.Schon, E. Bucher // Solar Energy Materials and Solar Cells. 1999, — V.57, № 3. — P.229−237.
- Nanu, M. Deep-level transient spectroscopy of Ti02/CuInS2 heterojunctions / M. Nanu, F. Boulch, J. Schoonman et al. // Appl. Phys. Lett. 2005.- V. 87, № 24. — P. 242 103 — 242 105.
- Zott, S. Photoluminescence of polycrystalline CuInSe2 thin films / S. Zott, K. Leo, M. Ruckh et al. // Appl. Phys. Lett. -1996.- V.68. P. l 144−1146.
- Dirnstorfer, I. Characterization of CuIn (Ga)Se2 Thin Films (III) / I. Dirnstorfer, M. Wagner, D.M.Hofmann et al. // Phys. Stat. Sol. (a). 1998, — V.168. — P.163 -175.
- Shklovskii, B.I. Electronic properties of doped semiconductors / B.I.Shklovskii, A.L.Efros: -Berlin: Springer-Verlag, 1984. 416 p.
- Леванюк, А.П. Теория Люминесценции Сильно Легированных Полупроводников /
- A.П.Леванюк, В. В. Осипов // ФТП. 1973, — Т.7, Вып.6. — С.1058−1068.
- Леванюк, А.П. Краевая Люминесценция Прямозонных Полупроводников / А. П. Леванюк,
- B.В.Осипов // УФН. -1981.- Т.133, Вып.З. С.427−477.
- Van de Walle, С.G. Universal alignment of hydrogen levels in semiconductors, insulators and solutions / C.G.Van de Walle, J. Neugebauer // Nature. 2003, — V. 423. — P. 626 — 628.
- Krauser, J. Hydrogen concentration in chalcopyrite thin-filmsolar cells / J. Krauser, T. Riedle, R. Klenk et al. // Appl. Phys. (a). 2000.- V.70. — P. 617−623.
- Topper, K. Photoluminescence of CuInS2 thin films and solar cells modified by postdeposition treatments / K. Topper, J. Bruns, R. Scheer et al. // Appl. Phys. Lett. 1997, — V.71, № 4. — P.482−484.
- Kihc, C. Doping of chalcopyrites by hydrogen / C. Kilic, A. Zunger // Appl. Phys. Lett. 2003.-V.83. — P.2007 — 2009.
- Rau, U. Oxygenation and air-annealing effects on the electronic properties of Cu (In, Ga) Se2 films and devices / U. Rau, D. Braunger, R. Herberholz et al. // J. Appl. Phys. 1999.- V. 86. № 1. — P. 497 505.
- Markvart, T. Radiation Damage in Solar Cells: a review / T. Markvart // Journal of Material Science: Materials in Electronics. 1990, — V. l, № 1. — P. l-12.
- Jasenek, A. Defect generation in Cu (In, Ga) Se2 heteroj unction solar cells by high-energy electron and proton irradiation / A. Jasenek, U. Rau // J. Appl. Phys. 2001.- V.90, № 2. — P.650−658.
- Guillemoles, J.F. Cu (In, Ga) Se2 solar cells: Device stability based on chemical flexibility / J.F. Guillemoles, U. Rau, L. Kronik et al. / Advanced Materials. 1999, — V. l 1, № 11. — P.957−968.
- Schock, H.W. Development of CIS Solar Cells for Space Applications / Proceedings of 2nd World Conference on Photovoltaic Energy Conversion, 6−10 July 1998./ eds.: J. Schmid et al. E.C. JRC, Luxembourg- 1998. P.3586−3589.
- Tanaka, T. Effect of Electron Irradiation on Properties of CuInSe2 Thin Films / T. Tanaka, T. Ohshima, H. Itoh et al. // Jpn. J. Appl. Phys. Suppl. 2000.- V.39−1. — P.192−193.
- Queisser, H.J. The conquest of the microchip / H.J.Queisser. Cambridge: Harvard University Press MA, 1992.-200 p.
- Hahn, H. Untersuchungen uber ternare Chalkogenide. V. Uber einige ternare Chalkogenide mit Chalkopyritstruktur / H. Hahn, G. Frank, W. Klinger et al. // Anorg. Allg. Chem. 1953, — V.271, № 34. — P.153−170.
- Палатник, JI. С. Фазовые Диаграммы Структуры Некоторых Полупроводниковых Сплавов A2ICvi-B2IIICvi / Л. С. Палатник, Е. И. Рогачева // Изв. Акад. Наук СССР. Неорг Матер. 1967,-Т.12. — С.503−506.
- Yu, P.W. Radiative Recombination in Melt-grown and Cd Dopped CuInSe2 / P.W.Yu // J. Appl. Phys. 1976, — V.47, № 2. — P. 677−684.
- Боднарь, И.В. Выращивание кристаллов тройных соединений типа А1-ВШ-С2У1 и их свойства / И. В. Боднарь, А. И. Лукомский // Изв. АН СССР. Неорган Матер. 1979, — Т.15, № 10. -Р. 1718−1721.
- Gonzales, J. Photodetecting Properties of CuInSe2 Homojunctions / J. Gonzales, C. Ricon, A. Redendo, P. Negrete // Jpn. J. Appl. Phys. Suppl. 1980, — V.3, № 19. — P. 29−32.
- Tomlinson, R.D. Crystal Growth of Cu-III-VI2 Compounds From the Melt / R.D.Tomlinson // Material Research Society Symposium Proceedings, Anaheim, California, 18−23 September 1987/. eds. D. Neil et al. — Anaheim, California. 1987- - P.177−186.
- Fearheiley, M.L.D. Phase Relations in the System In-CulnS2 / M.L.D.Fearheiley, N. Birkholtz, M. Hopfner, С. H. // Journal of Electronic Materials. 1991.- V.20, № 2. — P. 173 — 175.
- Shukri, Z.A. Identification of oxygen in the copper as the source of adhesion in Bridgman-grown CuInSe2 crystals / Z.A.Shukri, C.H.Champness // Journal of Crystal Growth. 1996.- V.166, № 1 — 4. -P. 708 -711.
- Mullan, C.A. A Microstructural and Compositional Analysis of CuInSe2 Ingots Grown by the Vertical Bridgmann Technique / C.A.Mullan, C.J.Kiely, S.M.Casey et al. // J. Cryst. Growth. -1997, — V.171. P.415−424.
- Mandel, L. The fabrication and Doping of Single Crystals of CuGaSe2 / L. Mandel, R.D. Tomlinson, M. Hampshire //J. Cryst. Growth. 1976.- V.36. — P.152−156.
- Gabor, A.M. High-efficiency CuInxGai. xSe2 solar cells made from (Inx, Gai. x)2Se3 precursor films / A.M.Gabor, J.R.Tuttle, D.S.Albin, M.A.Contreras, R. Noufi // Appl. Phys. Lett. 1994.- V.65. -P. 198−200.
- Jackson, P. High Quality Baseline for High Efficiency, Cu (Inix, Gax) Se2 Solar Cells / P. Jackson, R. Wu'rz, U. Rau et al. // Prog. Photovolt. Res. Appl. -2007, — V.15. P.507−519.
- Contreras, M.A. Characterization of Cu (In, Ga) Se2 materials used in record performance solar cells / M.A.Contreras, M.J. Romero, R. Noufi // Thin Solid Films. 2006, — V.511−512. — P.51−54.
- Zachmann, H. Characterisation of Cu (In, Ga) Se2-based thin film solar cells on polyimide / H. Zachmann, S. Heinker, A. Braun, et al. // Thin Solid Films. 2009, — V.517, № 7. — P. 2209−2212.
- Chu, W.K. Backscattering Spectrometry / W.K.Chu, J.W. Mayer, M.A. Nicolet // New York, San Francisko, London: Academic Press. 1978. 384 p.
- Doolittle, L. R. A semiautomatic algorithm for rutherford backscattering analysis / L. R. Doolittle // Nucl. Instr. Meth. B. 1986.- V.15, № 1−6. — P.227−231.
- Ziegler, J.F. Ion Beam Surface Layer Analysis / J.F.Ziegler, R.F.Lever, J.K.Hirvonen // New York, USA: Plenum Press. 1976, — 422 p.
- Bragg, W.H. On the alpha particles of radium and their loss of range in passing through various atoms and molecules / W.H.Bragg, R. Kleeman // Phil. Mag. 1905, — V.10. — P. 318−341.
- Lagford, W.A. New Precision Technique for Measuring the Concentration Versus Depth of Hydrogen in Solids / W.A.Lagford, H.P.Trautvetter, J.F.Ziegler, S.P.Keller // Appl. Phys. Lett. -1976. V.28, № 9. — P.566−569.
- Fink, D. Neutron Depth Profiling / D.Fink. Berlin: Hahn-Meitner-Institute GmbH (Germany)1996.-316 p.
- Гоулдстейн, Д. Растровая электронная микроскопия и рентгеновский микроанализ. В двух книгах. Пер. с англ. / Д. Гоулдстейн, Д. Ньюбери, П. Эчлин и др. М.: Мир. — 1984. — 366 с.
- Зигбан, К. Электронная спектроскопия / К. Зигбан, К. Нордлинг, А. Фальман и др.: М.: Мир. 1971. 445 с.
- Анализ поверхности методами Оже- и рентгеновской фотоэлектронной спектроскопии / Под ред. Д. Бриггса, М.Сиха. М.: Мир. 1987. -562 с.
- Kuznetsov, M.V. XPS And XPD Study of Cu (InGa)Se2 Surface / M.V.Kuznetsov, E.V.Shalaeva, A.G.Panasko, M.V.Yakushev // Thin Solid Films. 2004.- V.451−452. — P. 137−140.
- Kuznetsov, M.V. Evolution of CuInSe2 (112) Surface Due to Annealing: XPS Study / M.V.Kuznetsov, E.V.Shalaeva, M.V.Yakushev, R.D.Tomlinson // Surface Science Letters. 2003.-V.530, № 1−2. — P. L297 — L301.
- Тулинов, А.Ф. Влияние кристаллической решетки на некоторые атомные и ядерные процессы / А. Ф. Тулинов // Успехи физических наук. 1965.- Т. 87, Вып. 4. — С. 585−592.
- Линдхард, И. Влияние Кристаллической Решетки на Движение Быстрых Заряженных Частиц / И. Линдхард // УФН. 1969.- Т.99, Вып.2. — С.249−296.
- Bogh, Е. Defect Studies in Crystals by Means of Channeling / E. Bogh // Can. J. Phys. 1968,-V.46. — P.653−662.
- Yakushev, M.V. Depth Profiles and Dose Dependence of Radiation Damage Caused by 30kev Ar+ in CuInSe2 Single Crystals / M.V.Yakushev Surface Investigation / 2003, — V.5. — P.48−52.
- Yakushev, M.V. Radiation Damage and Amorphization Mechanism in Xe+ Irradiated CuInSe2 / M.V.Yakushev, I.S.Tashlykov, R.D.Tomlinson, A.E.Hill, R.D.Pilkington // Material Science Forum.1997, — V.171. P.248−249.
- Otte, K. Low Energy Ion Beam Etching of CuInSe2 Surfaces / K. Otte, G. Lippold, A. Schindler, Yakushev M.V. et al. // J. Vac. Sci. Technol. A. 1999.- V. 17, № 1. — P. 19−23.
- Yakushev, M.V. An RBS-Channelling and Raman Study of Implant Damage in Hydrogen Implanted CuInSe2 Single Crystals / M.V.Yakushev, G. Lippold, A.E.Hill, R.D.Pilkington, R.D.Tomlinson// Cryst. Res. Technol. 1996, — V.95. — P.357−360.
- Hiifner, S. Photoelectron Spectroscopy / S.Hufner. New-York: Springer-Verlage, 1995.- 456 p.
- Rehr, J.J. Scattering-matrix formulation of curved-wave multiple-scattering theory: Application to x-ray-absorption fine structure / J.J.Rehr, R.G.Albers // Phys. Rev. B. 1990.- V.42. — P.8139−8149.
- Nakamura, K. Ion-irradiation effects on the phonon correlation length of graphite studied by Raman spectroscopy / K. Nakamura, M. Kitajima// Phys. Rev. B. 1991.- V.45. — P.78−82.
- Abragam, A. The Principles of Nuclear Magnetism / A. Abragam // Oxford: Oxford University Press. 1961.-288 p.
- Hayano, R.S. Zero-and low-field spin relaxation studied by positive muons / R.S.Hayano,
- Y.J.Uemura, J. Imazato, N. Nishida, T. Yamazaki, R. Kubo 11 Phys. Rev. B. 1979, — V.20. — P. 850−859.
- Brewer, J.H. Muon Spin Rotation / Relaxation / Resonance / J.H.Brewer // V. 11: VCH Publishers, Inc. 1994. 316 p.
- Панков, Ж. Оптические процессы в полупроводниках / Ж. Панков- пер. под ред. Ж. И. Алферова, B.C. Вавилова. Москва: Мир, 1973, 456 с.
- Yu, P.Y. Fundamentals of Semiconductors / P.Y.Yu, M. Cardona Berlin: Springer, 2001, — 637 p.
- Elliot, R.J. Intensity of optical absorption by excitons / R.J.Elliot // Phys. Rev. -1957.- V.108. P. 1384−1389.
- Gilliland, G. D. Photoluminescence Spectroscopy of Crystalline Semiconductors / G. D. Gilliland // Materials Science and Engineering. 1997.- V. R18. — P.99−400.
- Wanie, G.H. The Structure and Electronic Excitation Levels in Insulating Crystals / G.H.Wanie // Phys. Rev. 1937, — V.52. — P.191−197.
- Knox, R. Theory of Excitons / R.Knox. New York: Academic Press, 1963, 178 p.
- Hopfield, J.J. Theory of the Contribution of Excitons to the Complex Dielectric Constant of Crystals / J.J.Hopfield // Phys. Rev. 1958, — V. 112. — P. 1555 — 1567.
- Klingshirn, C.F. Semiconductor Optics / C.F.Klingshirn. Berlin Heidelberg New York: SpringerVerlag, 1995, — 490 p.
- Steiner, T. Effect of neutral donor scattering on the time-dependent exciton-polariton photoluminescence line shape in GaAs / T. Steiner, M.L. W. Thewalt, E.S.Koteles, J.P.Salerno // Phys. Rev. B. 1986.- V.34. — P. 1006 — 1013.
- Sharma, R.R. Theory of Excitons Bound to Ionized Impurities in semiconductors / R.R.Sharma, S. Rodriguez // Phys. Rev. -1967.- V.153. P.823−827.
- Hynes, J.R. Experimental Proof of the Existence of a New Electronic Complex in Silicon / J.R.Hynes // Phys. Rev. Lett. I960.- V.4. — P.361−363.
- Atzmuller, H. Theory of Excitons Bound to Neutral Impurities in Polar Semiconductors / H. Atzmtiller, F. Froshl, U. Schroder // Phys. Rev. B. 1979.- V.19. — P.3138−3129.
- Turowski, M. Photoemission studies of CuInSe2 and CuGaSe2 and of their interfaces with Si and Ge / M. Turowski, G. Margaritondo, M.K.Kelly, R.D.Tomlinson // Phys. Rev. B. 1985, — V.31. -P. 1022- 1027.
- Wasim, S.M. Transport properties of CuInSe2 / S.M.Wasim // Sol. Cells. 1986.- V.16. — P.289−316.
- Yakushev, M.V. The Observation of Near Surface Deviation from Stoichiometry in CuInSe2 Crystals Following Chemical Etching / M.V. Yakushev, G. Constantinidis, M. Imanieh, R.D. Tomlinson // Solid State Communications. 1989.- V.65, № 10. — P. 1079−1083.
- Sander, M. Site-specific surface interaction of adsorbed water and halogens on copper indium selenide (CuInSe2) surfaces / M. Sander, W. Jaegermann, H.J.Lewerenz // J. Phys. Chem. Sol. 1992.-V.96, № 2. — P.782−790.
- Alberts, V. Control of VSe Defect Levels in CuInSe2 Prepared by Rapid Thermal Processing of Metallic Alloys / V. Alberts, J. Bekke, M.J.Witcomb, J.H.Schon, E. Bucher // Thin Solid Films. 2000,-V.361−362. — P.432−436.
- Heske, C. Electronic and Compositional Effects of Na Deposition on Cu (InGa)Se2 Thin Film Surfaces / C. Heske, R. Fink, E. Umbach, W. Riedl, F. Karg // Cryst. Res. Technol. 1996.- V.31. -P.465−468.
- Niemi, E., Stolt L., Characterization of CuInSe2 thin films by XPS / E. Niemi, L. Stolt // Surf Interface Anal. 1990, — V.15 -P. 422−426.
- Yakushev, M.V. Modification of the CuInSe2 Single Crystal Surface During Polishing and Annealing / M.V.Yakushev, H. Neumann, R.D.Tomlinson // Cryst. Res. Technol. 1997.- V.32, № 1. — P.155−161.
- Curran, J.E. The properties and applications of low energy plasmas / J.E.Curran // Vacuum. -1984.- V.34, № 3−4. P.343−345.
- Biersack, J.P. A Monte Carlo program for the transport of energetic ions in amorphous material / J.P.Biersack, L.G.Haggmark //Nucl. Instr. Meth. B. 1980, — V.174. — P.257−268.
- Yakushev, M.V. Effect of Plasma Hydrogenation on the Defect Properties of CuInSe2 / M.V.Yakushev, A. Zegadi, H. Neumann, P.A.Jones, A.E.Hill, R.D.Pilkington, M.A.Slifkin, R.D.Tomlinson // Cryst. Res. Technol. 1994, — V.29, № 3. — P.427−437.
- Yakushev, M.V. Ion Channelling Study of Hydrogen Induced Damage in CuInSe2 Crystals / M.V.Yakushev, P.A.Jones, H. Neumann, G.A.Stephens, R.D.Tomlinson // Nucl. Instr. Meth. Lett. B. -1993.-V.84.-P.405−407.
- Corvini, P. Surface order and stoichiometry of sputter-cleaned and annealed CuInSe2 / P. Corvini, A. Kahn, S. Wagner // J. Appl. Phys. 1985, — V.57. — P. 2967−2969.
- Cahen, D. Free energies and enthalpies of possible gas phase and surface reactions for preparation of CuInSe2 / D. Cahen, R. Noufi // Journal of Physics and Chemistry of Solids. 1991.- V. 52, № 8. — P. 947−961.
- Yakushev, M.V. Influence of Proton Implantation on the Properties of CuInSe2 Single Crystals (I) Ion Channelling Study of Lattice Damage / M.V.Yakushev, R.D.Tomlinson, H. Neumann // Cryst. Res. Technol. 1994.- V.29, № 1. — P.125−132.
- Yakushev, M.V. Radiation hardness of CuInSe2 / M.V.Yakushev // The 17th International Conference on Ion-Surface Interactions (ICIS-17), Zvenigorod, Russia, 10−14 June, 2005.
- Yakushev, M.V. Radiation hardness of CuInSe2 / M.V.Yakushev, Y. Feofanov, J. Krustok, M. Grossberg, A.V.Mudriy // Изв. Акад. Наук. СССР, Неорг Матер. 2006.- Вып.70, № 6. — С. 806−809.
- Krustok, J. The role of Spatial Potential Fluctuations in the Shape of the PL Bands of Multinary Semiconductor Compounds / J. Krustok, H. Collan, M. Yakushev, K. Hjelt // Physica Scripta. 1999.-V.79. — P.179−182.
- Krustok, J. On the Shape of the Close-to-Band-Edge Photoluminescent Emission Spectrum in Compensated CuGaSe2 / J. Krustok, J. Raudoja, M. Yakushev, R.D.Pilkington, H. Collan // Phys. Stat.
- Sol. (a). 1999, — V.173. — P. 483−490.
- Yakushev, M.V. A PL Study of Hydrogen Implanted Cu (InGa)Se2 Thin Films / M.V.Yakushev, R. W. Martin, F. Urquhart, A.V.Mudri, H.W.Schock, J. Krustok, R.D.Pilkington, A.E.Hill, R.D.Tomlinson // Jpn. J. Appl. Phys. 2000, — V. 39−1. — P.320−321.
- Yakushev, M.V. A PL Study of CIGS Thin Films Implanted With He fnd D Ions / M.V.Yakushev, R.W.Martin, J. Krustok, H.W.Schock, R.D.Pilkington, A.E.Hill, R.D.Tomlinson // Thin Solid Films. -2000, — V.361−362. P.488−493.
- Yakushev, M.V. Effects of D+ Implantation of CIGS Thin Films Through CdS Layer / M.V.Yakushev, R.W.Martin, J. Krustok, A.V.Mudriy, D. Holman, H.W.Schock, R.D.Pilkington, A.E.Hill, R.D.Tomlinson // Thin Solid Films. 2001, — V.387. — P.201−204.
- Rau, U. Electronic properties of Cu (In, Ga) Se2 heteroj unction solar cells-recent achievements, current understanding, and future challenges / U. Rau, H.W.Schock // Applied Physics (a) -Materials Science & Processing. 1999.- V.69, № 2. — P. 131−147.
- Scheer, R. Measurements of Minoroty-carrier Diffusion Length in n-CuInSe2 by Electron-Beam-Induced Current / R. Scheer, M. Wilhelm, H.J.Lewerenz // J. Appl. Phys. 1989.- V.66. — P.5412−5415.
- Matson, R.J. CdS induced homojunction formation in crystalline p-CuInSe2 / R.J.Matson, R. Noufi, K.J.Bachmann, D. Cahen // Appl. Phys. Lett. 1987, — V.50. — P.158−160.
- Боднарь, И. В. Спектры фотолюминесценции монокристаллов AgGaTe2, имплантированных водородом / И. В. Боднарь, В. Ф. Гременок, Р. В. Мартин, М. В. Якушев // Оптика и спектроскопия. 2000, — Т.88, Вып.З. — С.424−426.
- Otte, K. In Situ XPS Investigations Of Ion Beam Hydrogenation Of CuInSe2 Single Crystal Surfaces / K. Otte, G. Lippold, D. Hirsch, A. Schindler, M.V.Yakushev, R.W.Martin, F. Bigl // Thin Solid Films. 2001, — V.387. — P. 185−188.
- Fink, D. On the Redistribution of lOkeV Hydrogen in CuInSe2 / D. Fink, J. Krauser, G. Lippold, M.V.Yakushev, R.D.Tomlinson, A. Weidinger, K.K.Dwivedi, S. Ghosh, W.H.Chung // Rad. Eff. Def. in Solids. 1998, — V.145. — P.85−105.
- Gil, J.M. Modelling Hydrogen in CuInSe2 and CuInS2 Solar Cell Materials Using Implanted Muons//. J.M.Gil, P.J.Mendes, L.P.Feireira, H.V.Alberto, R.C.Vilao, N. Ayres de Campos,
- A.Weidinger, C. Niedermayer, M.V.Yakushev, R.D.Tomlinson, S.P.Cottrell, S.F.J.Cox // Phys. Rev.
- B. 1999.- V.59, № 3. — P.1912−1916.
- Chow, K.H. Diffusion, trapping, and relaxation of Mu+ and Mu- in heavily-doped GaAs / K.H.Chow, S.F.J.Cox, E.A.Davisc, S.R.Dunsigerd, T.L.Estle, B. Hitti, R.F.Kiefl, R.L.Lichti // Hyperfine Interactions. 1997.- V.105. — P.309−314.
- Vilao, R.C. Muon diffusion and trapping in chalcopyrite semiconductors / R.C.Vilao, J.M.Gil, H.V.Alberto, J.P.Duarte, N. Ayres de Campos, A. Weidinger, M.V.Yakushev, S.F.J.Cox // Physica B: Physics of Condensed Matter. 2002, — V. 326, № 1−4. — P.181−184.
- Van Vleck, J.H. The Dipolar Broadening of Magnetic Resonance Lines in Crystals / J.H.Van Vleck // Phys. Rev. 1948.- V.74. — P. 1168−1183.
- Lee, H. 3 MeV electron irradiation-induced defects in CuInSe2 thin films / H. Lee, H. Okada, A. Wakahara, T. Ohshima, H. Itoh, S. Kawakita, M. Imaizumi, S. Matsuda, A. Yoshida // Journal of Physics and Chemistry of Solids. 2003, — V.64. — P. 1887−1890.
- Polity, A. Study of defects in electron irradiated CuInSe2 by positron lifetime Spectroscopy / A. Polity, R. Krause-Rehberg, T.E.M.Staab, M.J.Puska, J. Klais, H.J.Moller, B.K.Meyer // J. Appl. Phys. -1998, — V.83, № 1. P.71−78.
- Ascheron, C. Study of proton-bombardment-induced radiation damage in elemental and compound semiconductors by RBS channeling / C. Ascheron, J.P.Biersack, D. Fink, P. Goppelt, A. Manuaba, F. Paszti, N.Q.Khanh//Nucl. Instr. Meth. B. 1992, — V.68. — P.443−449.
- Mullan, C.A. The effect of Ion Implantation on the Microstructure of CuInSe2 Single Crystals /
- C.A.Mullan, C.J.Kiely, M.V.Yakushev, M. Imanieh, R.D.Tomlinson, A. Rockett // Phil. Mag. A. -1996, — V.73, № 4. P. l 131−1145.
- Sigmund, P. Energy density and time constant of heavy-ion-induced elastic-collision spikes in solids / P. Sigmund // Appl. Phys. Lett. 1974.- V.25, № 3. — P.1974−1976.
- Nadazdy, V. Switching of Deep Levels in CuInSe2 Due to Electric Field-induced Cu Ion Migration / V. Nadazdy, M. Yakushev, E.D.Djebbar, A.E.Hill, R.D.Tomlinson // J. Appl. Phys.1998.- V.84, № 8. P.4322−4326.
- Lippold, G. A Raman Scattering Study of Ion Implantation Damage in CuInSe2 Single Crystals / G. Lippold, M.V.Yakushev, R.D.Tomlinson, A.E.Hill, W. Grill // Cryst. Res. Technol. 1996, — V.95. -P.385−388.
- Nomura, S. Preparation of CuInSe2 Thin Films by Pulse-Plated Electrodeposition / S. Nomura, S. Endo // Ternary and Multinary Compounds in the 21st Century. 2001. — Book 1. P. 131 -136.
- Shirakata, S. Raman spectra of CuInSe2 Thin films prepared by chemical spray pyrolys / S. Shirakata, H. Kubo, C. Hamaguchi, S. Isomura // Jpn. J. Appl. Phys. -1997.- V.36. P. L1394-L1396.
- Rau, U. Oxygenation and air-annealing effects on the electronic properties of Cu (In, Ga) Se2 films and devices / U. Rau, D. Braunger, R. Herberholz, H.W.Schock, J.-F.Guillemoles, L. Kronik, D. Cahen // J. Appl. Phys. -1999.- Y.86. P.497−505.
- Tomlinson, R.D. Electrical Properties of CuInSe2 Single Crystals Implanted with Xenon / R.D.Tomlinson, M.V.Yakushev, H. Neumann // Cryst. Res. Technol. 1993, — V.28, — P.267 — 272.
- Jagomagi, A. Photoluminescence studies of heavily doped CuInTe2 crystals / A. Jagomagi, J. Krustoka, J. Raudojaa, M. Grossberga, M. Danilsona, M. Yakushev // Physica В Condens Matter. -2003.- V.337. — P.369−374.
- Болотов, В.В. Физические процессы в облученных полупроводниках / В. В. Болотов, А. В. Васильев, Н. Н. Герасименко, А. В. Двуреченский, Г. А. Качурин, В. И. Панов, В. Ф. Стась // отв. ред. Л. С. Смирнов. Новосибирск: Наука, Сибирское отделение. 1977. 256 с.
- Hariskos, D. Chemical bath deposition of CdS buffer layer: prospects of increasing materials yield and reducing waste / D. Hariskos, M. Powalla, N. Chevaldonnet, D. Lincot, A. Schindler, B. Dimmler //
- Thin Solid Films. 2001.- V.387, № 1−2. — P.179−181.
- Neumann, H. Comparative Optical Absorption and Photoreflectance Study of n-Type CuInSe2 / H. Neumann, W. Horig, P.A.Jones, G. Lippold, H. Sobotta, R.D.Tomlinson, M.V.Yakushev // Cryst. Res. Technol. 1994, — V.29 — P.719 — 726.
- Theodoropoulou, S. Raman and photoreflectance study of CuIni-xGaxSe2 epitaxial layers / S. Theodoropoulou, D. Papadimitriou, N. Rega, S. Siebentritt, M.C.Lux-Steiner // Thin Solid Films. -2006, — V.511−512 -P.690 694.
- Kuskovsky, I. Decay Dynamics in Disordered Systems: Application to Heavily Doped Semiconductors / I. Kuskovsky, G.F.Neumark, G.F.Bondarev, P.V.Pikhitsa // Phys. Rev. Lett. -1998,-V.80. P.2413 — 2416.
- Rincon, C. Defect physics of the CuInSe2 chalcopyrite semiconductor / C. Rincon, R. Marquez // J. Phys. Chem. Solids. 1999, — V.60. — P.1865 — 1873.
- Герасименко, H.H. Радиационный отжиг дефектов, образующихся при бомбардировке кристаллов ионами / Н. Н. Герасименко, А. В. Двуреченский, Г. А. Качурин, Н. Б. Придачин, Л. С. Смирнов // ФТП. 1972.- Т.6, Вып.9. — С.1834−1835.
- Мудрый, А.В. Образование дефектов в тонких пленках полупроводникового соединения Cu(In, Ga) Se2 при облучении протонами / А. В. Мудрый, А. В. Иванюкович, М. В. Якушев,
- B.С.Куликаускас, В. С. Черныш // Журнал прикладной спектроскопии. 2006, — Т.73, Вып.6.1. C.828−830.
- Yakushev, M.V. Magneto -PL Study of Radiative Recombination in CuInSe2 Single Crystals / M.V.Yakushev, Y. Feofanov, R.W.Martin, R.D.Tomlinson, A.V.Mudryi // J. Phys. Chem. Solids. -2003, — V.64.-P.2011−2016.
- Tanino, H. Raman Spectra of CuInSe2 / H. Tanino, T. Maeda, H. Fujikake, H. Nakanishi, S. Endo, T. Irie // Phys. Rev. B. 1992, — V.45. — P. 13 323−13 330.
- Leroux, M. Temperature quenching of photoluminescence intensities in undoped and doped GaN / M. Leroux, N. Grandjean, B. Beaumont, G. Nataf, F. Semond, J. Massies, P. Gibart // J. Appl. Phys. -1999, — V.86, No 7. P.3721−3728.
- Cohen, E. Excited states of excitons bound to nitrogen pairs in GaP / E. Cohen, M.D.Sturge // Phys. Rev. B. 1977.- V. 15. — P. 1039−1051.
- Medvedkin, G.A. Diode n-p CuInSe2 Structures Fabricated by Oxygen Implantation / G.A.Medvedkin, Y.V.Rud, M.V.Yakushev // Cryst. Res. Technol. 1990, — V.25, № 11. — P.1299−1302.
- Polity, A. Study of defects in electron irradiated CuInSe2 by positron lifetime spectroscopy / A. Polity, R. Krause-Rehberg, T.E.M.Staab, M.J.Pushka, J. Klais, H.J.Moller, B.K.Meyer // J. Appl. Phys. 1998.-V.83.-P.71−78.
- Walukiewicz W. Mechanism of Fermi-level stabilization in semiconductors / W. Walukiewicz // Phys. Rev. B. 1988, — V.37. — P.4760−4763.
- Lany, S. Intrinsic DX centers in ternary chalcopyrite semiconductors / S. Lany, A. Zunger // Physical Review Letters. 2008, — V.100, № 1. — P. 16 401 — 16 404.
- Мудрый, А.В. Оптическая спектроскопия экситонных состояний в CuInSe2 / А. В. Мудрый,
- М.В.Якушев, Р. Д. Томлинсон, А. Е. Хилл, Р. Д. Пилкингтон, И. В. Боднарь, И. А. Викторов, В. Ф. Гременок, И. А. Шакин, А. И. Патук // ФТП. 2000, — Т. 34, Вып. 5. — С.550−554.
- Weber, J. Excitons Bound to an Isoelectronic Trap in Silicon / J. Weber, W. Schmid, R. Sauer // J. Luminescence. 1979, — V.93. — P.18−19.
- Yakushev, M.V. Temperature dependence of excitonic emission in CuInSe2 / M.V.Yakushev, R.W.Martin, A.V.Mudryi // Physica Status Solidi ©. 2009.- V.6, № 5. — P.1082−1085.
- Watkins, S.P. Sources of donor impurities in undoped GaAs grown using arsine and trimethylgallium / S.P.Watkins, G. Haacke // J. Appl. Phys. 1991.- V.69. — P.1625−1630.
- Hyness, J.R. Experimental Proofe of the Existence of a New Electronic Complex in Silicon / J.R.Hyness // Phys. Rev. Lett. I960, — V.4, № 7. — P.361−363.
- Hopfield, J.J. Fine Structure and Magneto-Optic Effects in the Exciton Spectrum of Cadmium Sulfide / JJ. Hopfield, D.G.Thomas // Phys. Rev. -I960.- V.122. P.35−52.
- Yakushev, M. V. Excited states of the free excitons in CuInSe2 single crystals / M.V.Yakushev, F. Luckert, C. Faugeras, A. V. Karotki, A. V. Mudryi, R. W. Martin // Appl. Phys. Lett. 2003. — V.97. -P.152 110 — 152 110.
- Shah, J. Effects of Bound Excitons in II-IV-V2 Chalcolpyrite Compounds / J. Shah, E. Buehler // Phys. Rev. B. 1971.- V.4. — P.2827−2829.
- Yakushev, M.V. Effects of Deviation From Stoichiometry on Excitons in CuInSe2 Single Crystals / M.V.Yakushev, A.V.Mudryi, Y. Feofanov, R.D.Tomlinson // Thin Solid Films. 2003, — V.431/432. -P. 190−192.
- Yakushev, M.V. Energy of Free Excitons in CuInSe2 Single Crystals / M.V.Yakushev, A.V.Mudryi, R.D.Tomlinson // Applied Physics Letters. 2003, — V.82, № 18. — P.3233−3235.
- Tell, B. Some Properties of AgAlTe2, AgGaTe2 and AgInTe2 / B. Tell, J.L.Shay, H.M.Kasper // Phys. Rev. B. 1974, — V.9, № 12. — P.5203−5208.
- Chichibu, A. Optical properties of tensile-strained wurtzite GaN epitaxial layers / A. Chichibu, T. Azuhata, T. Sota, H. Amano, I. Akasaki // Appl. Phys. Lett. 1997.- V.70. — P.2085−2087.
- Yakushev M.V. Effects of magnetic fields on free excitons in CuInSe2 / M.V.Yakushev, R.W.Martin, A. Babinski, A.V.Mudryi // Physica Status Solidi ©. 2009, — V.6, № 5. — P.1086−1088.
- Mudriy A.V. Optical Properties of High-Quality CuInSe2 Single Crystals / A.V.Mudriy, I.V.Bodnar, I.A.Viktorov, V.F.Gremenok, M.V.Yakushev, R.D.Tomlinson, A.E.Hill, R.D. Pilkington // Applied Physics Letters. 2000.- V.77. — P.2542−2544.
- Mudryi, A.V. Optical Properties of High-Quality CuInSe2 Single Crystals / A.V.Mudryi, M.V.Yakushev, R.D.Tomlinson, A.E.Hill, R.D.Pilkington, I.V.Bodnar, I.A.Victorov, V.F.Gremenok // Jpn. J. Appl. Phys. Suppl. 2000, — V.39−1. — P.92−94.
- Shay, J.L. Electronic Structure of AgInSe2 and CuInSe2 / J.L.Shay, H.M.Tell, H.M.Kasper, L.M.Schiavone // Phys. Rev. B" 1973.- V. 7, № 10. — P.4485−4490.
- Kildal H. Band structure of CdGeAs2 near k = 0 / H. Kildal // Phys. Rev. B. 1974, — V.10. -P.5082−5087.
- Yakushev, M.V. Excited States of the A and В Free Excitons in CuInSe2 single crystals / M.V.Yakushev, F. Luckert, C. Faugeras, A.V.Karotki, A.V.Mudryi, R.W.Martin // Appl. Phys. Lett. -2010.- V.97. -P. 152 110−152 112.
- Yakushev, M.V. Energy of Excitons in CuInS2 Single Crystals / M.V.Yakushev, A.V.Mudryi, I.V.Victorov, J. Krustok, E. Mellikov // Appl. Phys. Lett. 2006.- V.88. — P.11 922−11 924.
- Мудрый, A.B. Оптическая спектроскопия свободных экситонов в халькопиритном полупроводниковом соединении CuInS2 / А. В. Мудрый, А. В. Иванюкович, М. В. Якушев, Р. Мартин, А. Саад // ФТП. 2008.- Т.42, Вып.1. — С.31−35.
- Yakushev, M.V. Excitons in High-Quality CuInS2 Single Crystals / M.V.Yakushev, Y. Feofanov, A.V.Mudryi, A.V.Ivaniukovich, I.V.Victorov // Thin Solid Films. 2006, — V.511−512. — P. 130−134.
- Bacewicz, R. Raman scattering in CuInS2XSe2(i-X) mixed crystals / R. Bacewicz, W. Gebicki, J. Filipowiz // J. Phys.: Cond Matter. 1994.- V. 6. — P. L777 — L780.
- Kosihel, W.H. Zone-centered phonons in AIBIIIS2 chalcopyrits / W.H.Kosihel, M. Bettini // Phys. Stat. Sol. (b). 1975.- V. 72. — P. 729 — 737.
- Eryigit, R. Abinitio vibrational and dielectric properties of chalcopyrite CuInS2 / R. Eryigit, C. Parlak, R. Eryigit // Eur. Phys. J. B. 2003, — V. 33. — P.251 — 254.
- Gossla, M.M. CuInS2 thin-films from co-evaporated precursors / M.M.Gossla, H. Metzner, H.E.Mahnke // Thin Solid Films. 2001.- V. 387. — P. 77 — 79.
- Wakita K. Resonant Raman scattering and luminescence in CuInS2 crystals / K. Wakita, H. Hirooka, S. Yasuda, F. Fujita, N. Yamamoto // J. Appl. Phys. 1998.- V.83. — P.443 — 447.
- Susaki, M. Luminescence of mixed-mode exciton-polariton in CuGaS2 / M. Susaki, H. Wakita, N. Yaumomoto // Jpn. J. Appl. Phys. 1999, — V.38, № 5. — P.2787 — 2791.
- Pan, D.S. The j-j coupling in bound excitons in the effective mass approximation / D.S.Pan // Solid State Communications -1981, — V.37, № 5. P.375−378.
- Yakushev, M.V. Excited States of the A Free Exciton in CuInS2 / M.V.Yakushev, R.W.Martin, A.V.Mudryi, A.V.Ivaniukovich // Appl. Phys. Lett. 2008, — V.92. — P. l 11 908−111 910.
- Varshni, Y.P. Temperature dependence of the energy gap in semiconductors / Y.P.Varshni // Physica В Condens Matter. — 1967.- V.34. — P.149 — 154.
- Passler, R. Dispersion related description of temperature dependencies of band gaps in semiconductors / R. Passler // Phys. Rev. B. 2002, — V.66. — P.852 011 — 8 520 118.
- Reynolds, D.C. Valence-band ordering in ZnO / D.C.Reynolds, D.C.Look, B. Jogai, C.W.Litton,
- G.Cantwell, W.C.Harsch // Phys. Rev. В -1999, — V.60. P.2340 -2344.
- Rodina, A.V. Free excitons in wurtzite GaN / A.V.Rodina, M. Dietrich, A. Goldner, L. Eckey, A. Hoffmann, A.L.Efros, M. Rosen, B.K.Meyer//Phys. Rev. B. 2001, — V.64. — P. l 152 041−11 520 419.
- Arimoto, O. Polariton Luminescence in Monoclinic Z11P2 Crystal / O. Arimoto, S. Okamoto, K. Nakamura // J. Phys. Soc. Jpn. -1990. V.59, № 10. — P.3490 — 3493.
- Baldereschi, A. Enrgy levels of direct excitons in semiconductors with degenerate bands / A. Baldereschi, N.C.Lipari // Phys. Rev. B. -1971.- V.3. P.439- 451.
- Shay, J.L. p-d Hybridization of the Valence Bands of I-III-VI2 Compounds / J.L.Shay, B. Tell,
- H.M.Kasper, L.M.Shianove // Phys. Rev. B. 1972, — V.5. — P.5003−5005.
- Stepnewski, R. Polariton effects in reflectance and emission spectra of homoepitaxial GaN / R. Stepnewski, K.P.Korona, A. Wysmolek, J.M.Baranovski, K. Pakula, M. Potemski, G. Martinez,
- Gregory, S. Porovski //Phys. Rev. B. 1997, — V.56. — P.15 151 -15 156.
- Yakushev, M.V. Diamagnetic Shifts of Free Excitons in CuInS2 in Magnetic Fields / M.V.Yakushev, R.W. Martin, A.V.Mudryi // Appl. Phys. Lett. -2009.- V.94. P.42 109−42 111.
- Мудрый, A.B. Фотолюминесценция монокристаллов CuInS2, выращенных методом направленной кристаллизации и из газовой фазы / А. В. Мудрый, А. В. Короткий, М. В. Якушев,
- Р.Мартин // Журнал прикладной спектроскопии. 2009.- Т.76, Вып.2. — С.232−236.
- Wakita, К. Analysis of Recombination Process Resonantly Excited with Free Exciton Energy on CuInS2 Using Photoacoustic Spectroscopy / K. Wakita, G. Hu, N. Nakayama, D. Shoji. // Jpn. J. Appl. Phys. 2002, — V.41. — P.3356−3357.
- Molva, E. Acceptor Pair-Bound Exciton Complexes in Semiconductors / E. Molva, N. Magna // Physica Status Solidi (b). 1980, — V. 102, № 2. — P. 475 — 486.
- Mudryi, A.V. Optical Spectroscopy of Chalcopyrite Compounds CuInS2, CuInSe2 and Their Solid Solutions / A.V.Mudryi, I.A.Victorov, V.F.Gremenok, A.I.Patuk, I.A. Sakin, M.V. Yakushev // Thin Solid Films. 2003, — V. 431/432. — P. 197−200.
- Abou-Elfotouh, F. A Broad band spectroscopic ellipsometry for the characterization of photovoltaic materials / F.A.Abou-Elfotouh, G.S.Horner, T.J.Coutts, M.W.Wanlass // Solar Cells. -1991, — V.30. P.473 — 480.
- Dagan, G. Defect level identification in copper indium selenide (CuInSe2) from photoluminescence studies / G. Dagan, F. Abou-Elfotouh, D.J.Dunlavy, R.J.Matson, D. Cahen // Chem. Mater. 1990, — V.2, № 3. — P. 286−293.
- Hopfield, J.J. Isoelectronic Donors and Acceptors / J.J.Hopfield, D.G.Thomas, R.T.Lynch // Phys. Rev. Lett. -1966,-V.17. P.312−315.
- Наумов, А.Ю. Экситонные Спектры Твердого Раствора ZnSei.xTex / А. Ю. Наумов, С. А. Пермагоров, А. Н. Резницкий, В. Я. Жулай, В. А. Новожилов, Г. Т. Петровский // ФТТ. 1987.-Т.29, Вып.2. — С.377−384.
- Schon, J.H. Sharp optical emissions from Cu-rich, polycrystalline CuInSe2 thin films / J.H. Schon, V. Alberts, E. Bucher // J. Appl. Phys. -1997, — V.81, № 6. P.2799−2802.
- Alberts, V. Preparation of Cu (In, Ga) Se2 polycrystalline thin films by two-stage selenization processes using H2Se-Ar gas / V. Alberts, J.H.Schon, M.J.Witcomb, E. Bucher, U. Ruhle, H.W. Schock //J. Phys. D: Appl. Phys. 1998.- V.31. — P.2869−2876.
- Ушанов, Ю.И. Оптические Свойства Полупроводников / Ю. И. Ушанов. Москва: Наука. 1997.-366 с.
- Swanepoel, R. Determination of the Thickness and Optical-Constants of Amorphous-Silicon / R. Swanepoel // J. Phys. E. 1983.- V.16. — P.1214 — 1222.
- Wemple S.H. Optical Transmission Through Multilayered Structures / S.H.Wemple, J. A. Seman / Appl. Opt. 1973, — V.12, № 12. — P.2947−2949.
- Tutle, J.R. A comprehensive study on the optical properties of thin-film CuInSe2 as a function of composition and substrate temperature / J.R.Tutle, D. Albin, R.J.Matson, R. Noufi // J. Appl. Phys. -1989.- V.66.-P.4408−4417.
- Horig, W. Refractive indices of CuInSe2 and CuGaTe2 / W. Horig, H. Neumann // Phys. Lett. -1980.-V.78A.-P.189- 191.
- Alonso, M.I. Optical functions and electronic structure of CuInSe2, CuGaSe2, CuInS2, and CuGaS2 / M.I.Alonso, K. Wakita, J. Pascual, M. Garriga, N. Yamamoto // Physical Review B. 2001.- V. 63. -P.752 031−7 520 313.
- Stolt, L. ZnO/CdS/CuInSe2 thin-film solar cells with improved performance / L. Stolt, J. Hedstrom, J. Kessler, M. Ruckh, K.O.Velthaus, H.W.Schock // Appl. Phys. Lett. -1991, — V.62. P.597−599.
- Ramanathan, К. Extrinsic doping effect in the fabrication of CIGS and CIGSS thin film solar cells / K. Ramanathan, J. Pankow, S. Asher // Phys. Stat. Sol. (b). 2004, — V.241, № 3. — P.767−770.
- Contreras, M.A. Characterization of Cu (In, Ga) Se2 Materials Used in Record Performance Solar Cells / M.A.Contreras, M. J. Romero, R. Noufi // Thin Solid Films. 2006.- V.511−512. — P.51−54.
- Yoshino, K. Piezoelectric Photoacoustic and Photoluminescence Properties of CuInxGai. xSe2 Alloys / K. Yoshino, M. Iwamoto, H. Yokayama, A. Fukayama, K. Maeda, S. Niki, T. Ikari // Jpn. J. Appl. Phys. 1999, — V.38−74. — P.3171 — 3174.
- Shirakata, S. Properties of Cu (In, Ga) Se2 Thin Films Prepared by Chemical Spray Pyrolysis / S. Shirakata, Y. Kannaka, H. Hasegawa, T. Kariya, S. Isomura // Jpn. J. Appl. Phys. 1999.- V.38. -P.4997−4999.
- Theodoropoulou S. Raman and photoreflectance study of CuInixGaxSe2 epitaxial layers / S. Theodoropoulou, D. Papadimitriou, N. Rega, S. Siebentritt, M.C.Lux-Steiner // Thin Solid Films. -2006, — V.511−512, № 147. P.690 — 694.
- Kuskovsky, I. The Role of Potential Fluctuations in cw Luminescence of Heavily Doped Materials / I. Kuskovsky, D. Li, G.F.Neumark, V.N.Bondarev, P.V.Pikhitsa // Appl. Phys. Lett. -1999.- V.75. -P.1243−1235.