Сканирующая зондовая микроскопия наноразмерных гетероструктур для полупроводниковых лазеров
Диссертация
На сколах гетероструктур Оа0.4б1п0.54Р/(А1о.бОа0.4)о.51по.5Р и CdSZZnS0.07Se0.93″ содержащих слабо окисляющиеся слои, контактным и полуконтактным методом сканирования был выявлен нанорельеф, сформированный релаксацией внутренних упругих напряжений на свободной поверхности. Проведен расчет данного нанорельефа на основе теории упругости в линейном и изотропном приближении, позволивший оценить… Читать ещё >
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